Order this document by MRW2001/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts Power Gain — 5.2 to 9.0 dB, Min Collector Efficiency — 40%, Min 5.2 – 9.0 dB 1.0 – 2.3 GHz 1.0 – 20 W MICROWAVE POWER TRANSISTORS • Gold Metallization for Improved Reliability • Diffused Ballast Resistors • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 328A–03, STYLE 1 (GP–13) MAXIMUM RATINGS Symbol Value Unit Collector–Base Voltage Rating VCES 50 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous IC Adc MRW2001 MRW2003 Operating Junction Temperature Storage Temperature Range 0.25 0.5 TJ 200 °C Tstg – 65 to + 200 °C Symbol Max Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, RF, Junction to Case MRW2001 MRW2003 °C/W RθJC 25 15 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 50 50 — — — — Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) (IC = 20 mA, VBE = 0) V(BR)CES MRW2001 MRW2003 Vdc (continued) REV 8 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRW2001 MRW2003 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 3.5 3.5 — — — — — — — — 0.5 0.5 10 10 — — 120 100 Cob — — — — 4.0 5.0 pF GPB 9.0 — — dB GPB 8.0 — — dB η 40 — — % OFF CHARACTERISTICS (continued) Emitter–Base Breakdown Voltage (IE = 0.2 mA, IC = 0) (IE = 0.25 mA, IC = 0) MRW2001 MRW2003 V(BR)EBO Collector Cutoff Current (VCB = 28 V, IE = 0) MRW2001 MRW2003 ICBO Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) hFE MRW2001 MRW2003 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) MRW2001 MRW2003 FUNCTIONAL TESTS Common–Base Amplifier Power Gain (VCE = 28 V, Pout = 1.0 W, f = 2.0 GHz) MRW2001 Common–Base Amplifier Power Gain (VCE = 28 V, Pout = 3.0 W, f = 2.0 GHz) MRW2003 Collector Efficiency (VCE = 28 V, Pout = 1.0 W, f = 2.0 GHz) (VCE = 28 V, Pout = 3.0 W, f = 2.0 GHz) MRW2001 MRW2003 Load Mismatch (VCE = 28 V, f = 2.0 GHz, Load VSWR = ∞:1, All Phase Angles) Pout = 1.0 W MRW2001 Pout = 3.0 W MRW2003 Saturated Output Power (VCE = 28 V, f = 2.3 GHz) (VCE = 28 V, f = 1.5 GHz) (VCE = 28 V, f = 1.0 GHz) (VCE = 28 V, f = 2.3 GHz) (VCE = 28 V, f = 1.5 GHz) (VCE = 28 V, f = 1.0 GHz) MRW2001 MRW2003 2 ψ No Degradation in Output Power W MRW2001 MRW2003 Psat 1 Psat 2 Psat 3 — — — 1.0 1.2 1.3 — — — — — — 3.0 3.7 4.0 — — — MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS MRW2001 MRW2003 3 2 Pout, POWER OUTPUT (WATTS) 6 f = 1 GHz 1.5 GHz 2 GHz 2.3 GHz 1 VCC = 28 V 0 0 0.1 0.2 5 2 GHz 3 2.3 GHz 2 VCC = 28 V 1 0 0.3 1.5 GHz f = 1 GHz 4 0 100 Pin, POWER INPUT (WATTS) 200 300 400 500 Pin, POWER INPUT (WATTS) Figure 1. Output Power versus Input Power MRW2001 MRW2003 f = 1 GHz 2 1.5 1.5 1.5 2 2 ZOL* f = 1 GHz Zin 0.6 2.3 0.6 Zin 1.5 0.4 0.4 1 2 0.2 0.2 ZOL* f = 1 GHz 2.3 f = 2.3 GHz Zo = 50 Ω 0.8 1 0.8 1 Zo = 50 Ω 2.3 1.5 1.5 2 2 3 3 4 5 4 5 10 10 Figure 2. Series Equivalent Input/Output Impedance VCC = 28 V MRW2003 60 2 Po 50 1.5 ηc 1 40 VCC = 28 V 30 1 1.5 2 f, FREQUENCY (GHz) 2.5 0.5 3 80 6 η c , EFFICIENCY (%) 2.5 Psat, SATURATED OUTPUT POWER (WATTS) MRW2001 70 70 5 ηc 60 4 Po(sat) 50 VCC = 28 V 40 1 3 1.5 2 2.5 3 f, FREQUENCY (GHz) Figure 3. Power Output and Efficiency versus Frequency MOTOROLA RF DEVICE DATA MRW2001 MRW2003 3 The graph shown below displays MTTF in hours x ampere2 emitter current for each of the “Super 2.0 GHz” devices. Life tests at elevated temperatures have correlated to better than ±10% to the theoretical prediction for metal failure. Sample MTTF calculations based on operating conditions are included on the graph. MTTF FACTOR (10 6 HRS. X AMP2) 100 10 1 0.1 MRW2003 0.01 MRW2001 0.001 70 90 110 130 150 170 190 210 TJ, JUNCTION TEMPERATURE (°C) Figure 4. MTTF Factor Cfo Cfo 50 Ω Bt 50 Ω Cx 50 Ω RFC Cx 50 Ω C CC MRW2001 2.0 GHz Board Material = 0.062″ Glass-Teflon εr = 2.55 CC MRW2003 2.0 GHz Board Material = 0.020″ Glass-Teflon εr = 2.55 Figure 5. PC Board Layouts MRW2001 MRW2003 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –B– Q 2 PL 0.15 (0.006) –A– G D 1 2 3 K N T A M M B R J E C S –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M. 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G J K N Q R S F K M SEATING PLANE INCHES MIN MAX 0.795 0.805 0.245 0.255 0.145 0.170 0.115 0.125 0.055 0.065 0.045 0.055 0.562 BSC 0.003 0.006 0.260 0.375 0.175 0.185 0.120 0.135 0.225 0.235 0.120 0.130 MILLIMETERS MIN MAX 20.20 20.45 6.23 6.47 3.69 4.31 2.93 3.17 1.40 1.65 1.15 1.39 14.27 BSC 0.08 0.15 6.60 9.52 4.45 4.69 3.05 3.42 5.72 5.97 3.05 3.30 STYLE 1: 1. EMITTER 2. COLLECTOR 3. BASE CASE 328A–03 ISSUE E MOTOROLA RF DEVICE DATA MRW2001 MRW2003 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRW2001 MRW2003 6 ◊ MRW2001/D MOTOROLA RF DEVICE DATA