Order this document by MRF338/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) 80 W, 400 to 512 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications CASE 333–04, STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 30 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4 Vdc Collector Current — Continuous Collector Current — Peak IC 9 12 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.7 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 8 mAdc, IC = 0) V(BR)EBO 4 — — Vdc Characteristic OFF CHARACTERISTICS (1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. (2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF338 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CBO 60 — — Vdc ICBO — — 5 mAdc hFE 20 — 80 — Cob — 95 125 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) GPE 7.3 8.8 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) η 50 60 — % Load Mismatch (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz, VSWR = 30:1, All Phase Angles at Frequency of Test) ψ OFF CHARACTERISTICS Collector–Base Breakdown Voltage (IC = 80 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1 MHz) FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power RFC1 L4 + C14 C12 R2 L3 C13 28 V + C15 – L2 C11 C10 R1 Z2 Z3 Z4 DUT RF INPUT RF OUTPUT Z1 C6 L1 C1 BEAD Bead C1, C2, C8, C9 C3, C4, C6, C7 C5, C10 C11, C13 C12, C14 C15 L1 L2 VCC C2 C3 C7 C8 C9 C4 C5 Ferroxcube #56–590–65/3B 0.8 – 20 pF, Johanson (JMC 5501) 25 pF, 100 V, Underwood 100 pF, 100 V, Underwood 0.1 µF, Erie Redcap 680 pF, Feedthru 1.0 µF, Tantalum 0.15 µH, Molded Choke 5 Turns #20 AWG, 0.185″ ID, Close Wound L3 L4 RFC1 R1, R2 Z1 Z2 Z3 Z4 3 Turns #18 AWG, 0.185″ ID, Close Wound 4 Turns #18 AWG, 0.185″ ID, Close Wound Ferroxcube VK200 19/4B 10 Ω, 2.0 Watt Carbon 0.190″ W x 2.5″ L, Microstrip Lin 0.190″ W x 0.289″ L, Microstrip Line 0.190″ W x 0.55″ L, Microstrip Line 0.190″ W x 0.325″ L, Microstrip Line Board Glass Teflon, t = 0.062″, εr = 2.56 Figure 1. 470 MHz Test Circuit MRF338 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 100 100 Pin = 14 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 470 MHz 512 MHz 80 60 400 MHz 40 20 VCC = 28 Vdc 0 0 4 8 12 16 10 W 40 20 f = 470 MHz 14 16 18 20 22 24 26 Pin, INPUT POWER (WATTS) VCC, SUPPLY VOLTAGE (V) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage 28 100 Pout , OUTPUT POWER (WATTS) G PE, POWER GAIN (dB) 12 W 60 0 12 20 10 9 8 7 6 5 400 80 VCC = 28 Vdc Pout = 80 W 425 450 475 500 Pin = 16 W 80 12 W 60 8.0 W 40 20 VCC = 28 Vdc 525 0 400 425 450 475 500 525 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Power Gain versus Frequency Figure 5. Output Power versus Frequency MOTOROLA RF DEVICE DATA MRF338 3 512 470 450 512 500 500 ZOL* f = 400 MHz Zin 470 450 f = 400 MHz Zo = ?? Ω f MHz 512 500 470 450 400 VCC = 28 V, Pout = 80 W Zin ZOL* Ohms Ohms 0.91 + j2.61 1.47 + j2.71 1.53 + j2.98 1.27 + j3.09 0.86 + j3.01 1.19 + j1.34 1.33 + j0.96 1.60 + j0.45 1.70 + j0.25 2.58 – j0.79 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 6. Series Equivalent Input/Output Impedance MRF338 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– Q N 0.13 (0.005) D M T A 3 –B– P K 4 F G J N H M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L N P Q K 2 1 2 PL INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.190 0.210 0.095 0.115 0.215 0.235 0.725 BSC 0.155 0.175 0.004 0.006 0.195 0.205 0.740 0.770 0.415 0.425 0.390 0.400 0.120 0.135 STYLE 1: PIN 1. 2. 3. 4. N C –T– MILLIMETERS MIN MAX 24.51 25.02 9.91 10.41 6.73 7.36 4.83 5.33 2.42 2.92 5.47 5.96 18.42 BSC 3.94 4.44 0.10 0.15 4.95 5.21 18.80 19.55 10.54 10.80 9.91 10.16 3.05 3.42 EMITTER COLLECTOR EMITTER BASE SEATING PLANE CASE 333–04 ISSUE E MOTOROLA RF DEVICE DATA MRF338 5 Motorola reserves the right to make changes without further notice to any products herein. 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