S S D G 27 2 T- D G SO APL1001J S ISOTOP® 18.0A 0.60W 1000V "UL Recognized" File No. E145592 (S) POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APL1001J UNIT 1000 Volts Drain-Source Voltage 18 Continuous Drain Current @ TC = 25°C 1 Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage ±30 Volts Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C PD TJ,TSTG TL 72 and Inductive Current Clamped Y R A N I M I L E R P -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1000 Volts ID(ON) On State Drain Current 18 Amps Symbol RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) Drain-Source On-State Resistance 2 TYP MAX 0.60 (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Ohms µA Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage UNIT 2 (VDS = VGS, ID = 2.5mA) ±100 nA 4 Volts MAX UNIT THERMAL CHARACTERISTICS Characteristic MIN RQJC Junction to Case RQCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) TYP 0.24 °C/W 0.06 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-5904 Rev A 3-2000 Symbol DYNAMIC CHARACTERISTICS Symbol APL1001J Test Conditions Characteristic MIN TYP Ciss Input Capacitance VGS = 0V 6100 Coss Output Capacitance VDS = 25V 780 C rss Reverse Transfer Capacitance f = 1 MHz 285 Turn-on Delay Time VGS = 15V 14 VDD = 0.5 VDSS 14 ID = ID [Cont.] @ 25°C 60 RG = 0.6W 14 td(on) tr Rise Time td(off) Turn-off Delay Time tf Fall Time MAX UNIT pF ns SAFE OPERATING AREA CHARACTERISTICS Symbol Characteristic SOA1 Safe Operating Area Test Conditions / Part Number MIN TYP VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C 300 375 MAX 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) q 0.3 0.02 0.01 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.001 10-5 t1 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 050-5904 Rev A 3-2000 Hex Nut M4 (4 places) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 UNIT Watts