APT5010JVRU3
44A 0.100Ω
500V
POWER MOS V ®
A
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP®
D
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Single Die MOSFET & FRED
• PFC "Buck" Configuration
MAXIMUM RATINGS
Symbol
VDSS
ID
A
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5010JVRU3
UNIT
500
Volts
Drain-Source Voltage
44
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
450
Watts
Linear Derating Factor
3.6
W/°C
VGSM
PD
TJ,TSTG
176
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
44
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
500
Volts
44
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.100
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5559 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT5010JVRU3
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
7410
Coss
Output Capacitance
VDS = 25V
1050
Reverse Transfer Capacitance
f = 1 MHz
390
Crss
Qg
Total Gate Charge
Qgs
3
VGS = 10V
312
VDD = 0.5 VDSS
37
ID = ID[Cont.] @ 25°C
127
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
18
VDD = 0.5 VDSS
16
ID = ID[Cont.] @ 25°C
54
RG = 0.6Ω
5
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
Characteristic / Test Conditions
MIN
TYP
MAX
44
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
176
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
620
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
14.7
µC
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
TYP
MAX
UNIT
0.28
40
°C/W
2500
Volts
13
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.58mH, R = 25Ω, Peak I = 44A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5559 Rev A
0.3
t1
0.01
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
lb•in
APT5010JVRU3
VGS=7V, 8V, 10V & 15V
100
80
5.5V
60
40
VGS=15V
6V
5V
20
4.5V
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
TJ = +125°C
20
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
5V
20
4.5V
1.5
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.4
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
1.2
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
40
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.5
5.5V
60
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
VGS=7V, 8V & 10V
4V
0
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
4V
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
100
6V
80
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5559 Rev A
ID, DRAIN CURRENT (AMPERES)
100
APT5010JVRU3
200
OPERATION HERE
LIMITED BY RDS (ON)
100µS
50
5
10mS
1
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
D
VDS=100V
16
Coss
Crss
1,000
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
D
5,000
100
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
C, CAPACITANCE (pF)
1mS
10
VDS=250V
12
VDS=400V
8
4
0
Ciss
10,000
0
100
200
300
400
500
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
30,000
10µS
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
Diode Specifications Section
MAXIMUM RATINGS (UltraFast Recovery Diode)
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT5010JVRU3
UNIT
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 80°C, Duty Cycle = 0.5)
30
RMS Forward Current
60
IF(RMS)
IFSM
TJ,TSTG
TL
Amps
320
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS)
-55 to 150
Operating and StorageTemperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
050-5559 Rev A
IRM
CT
Maximum Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
IF = 60A
UNIT
1.8
IF = 30A
VF
MAX
1.5
Volts
IF = 30A, TJ = 150°C
1.6
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
40
µA
pF
APT5010JVRU3
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
65
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µS, VR = 30V, TJ = 25°C
50
trr2
Reverse Recovery Time
TJ = 25°C
50
trr3
IF = 30A, diF /dt = -240A/µS, VR = 350V
TJ = 100°C
80
tfr1
Forward Recovery Time
TJ = 25°C
155
tfr2
IF = 30A, diF /dt = 240A/µS, VR = 350V
TJ = 100°C
155
IRRM1
Reverse Recovery Current
TJ = 25°C
4
10
IRRM2
IF = 30A, diF /dt = -240A/µS, VR = 350V
TJ = 100°C
7.5
15
Qrr1
Recovery Charge
TJ = 25°C
100
Qrr2
IF = 30A, diF /dt = -240A/µS, VR = 350V
TJ = 100°C
300
Vfr1
Forward Recovery Voltage
TJ = 25°C
5
Vfr2
IF = 30A, diF /dt = 240A/µS, VR = 350V
TJ = 100°C
5
Rate of Fall of Recovery Current
TJ = 25°C
400
IF = 30A, diF /dt = -240A/µS, VR = 350V (See Figure 10)
TJ = 100°C
200
diM/dt
UNIT
nS
Amps
nC
Volts
A/µS
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
RθJA
Junction-to-Ambient Thermal Resistance
WT
MIN
TYP
MAX
UNIT
0.90
°C/W
20
1.06
oz.
30
gm.
Package Weight
2.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
PDM
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
0.01
Peak TJ = PDM x ZθJC + TC
0.005 -5
10
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
050-5559 Rev A
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.0
APT5010JVRU3
1600
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
80
60
TJ = 150°C
TJ = 100°C
40
TJ = 25°C
TJ = -55°C
20
0
0
0.5
1.0
1.5
2.0
2.5
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 15, Forward Voltage Drop vs Forward Current
1200
60A
800
30A
400
15A
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 16, Reverse Recovery Charge vs Current Slew Rate
2.0
40
TJ = 100°C
VR = 350V
60A
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
TJ = 100°C
VR = 350V
30
20
30A
15A
10
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 17, Reverse Recovery Current vs Current Slew Rate
1.6
Qrr
trr
1.2
trr
IRRM
0.8
Qrr
0.4
0.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 18, Dynamic Parameters vs Junction Temperature
200
-50
2500
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
160
60A
120
30A
15A
80
40
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 19, Reverse Recovery Time vs Current Slew Rate
25
TJ = 100°C
VR = 350V
IF = 30A
TJ = 100°C
VR = 350V
2000
20
Vfr
1500
15
1000
10
500
5
tfr
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate
050-5559 Rev A
CJ, JUNCTION CAPACITANCE
(pico-FARADS)
800
500
100
50
30
0.01
0.05
0.1
Figure 21, Junction Capacitance vs Reverse Voltage
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
IF, FORWARD CURRENT
(AMPERES)
100
0.5
1
5
VR, REVERSE VOLTAGE (VOLTS)
10
50
100
200
APT5010JVRU3
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
+15v
diF /dt Adjust
0v
-15v
Figure 22, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 23, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
Anode
Drain
30.1 (1.185)
30.3 (1.193)
Changed 2/10/99
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
"UL Recognized" File No. E145592
ISOTOP® is a Registered Trademark of SGS Thomson.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
050-5559 Rev A
Gate
Source