D TO-247 G ARF440 ARF441 S 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION (1-15MHz ) POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications. • Specified 50 Volt, 13.56 MHz Characteristics: • Output Power = 125 Watts. • Gain = 21dB (Typ.) • Efficiency = 63% (Typ.) • Low Cost Common Source RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF440/441 VDSS Drain-Source Voltage 150 VDGO Drain-Gate Voltage 150 ID UNIT Volts Continuous Drain Current @ TC = 25°C 11 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 167 Watts Junction to Case 0.75 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 150 VDS(ON) On State Drain Voltage IDSS IGSS 1 TYP MAX UNIT Volts (ID(ON) = 10A, VGS = 10V) 6 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 10V, ID = 5.5A) 4 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 200mA) 2 5 µA nA mhos 5 Volts APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-4406 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. ARF440/441 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss MIN TYP MAX 755 900 VDS = 50V 155 215 f = 1 MHz 55 90 MAX VGS = 0V Reverse Transfer Capacitance UNIT pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Test Conditions MIN TYP VDD = 50V 18 21 dB 63 % Common Source Amplifier Power Gain Pout = 125W η Drain Efficiency ψ Electrical Ruggedness VSWR 30:1 IDQ = 200mA UNIT No Degradation in Output Power f = 13.56MHz 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL 13.56 MHz, 250 WATT PUSH-PULL POWER AMPLIFIER CIRCUIT ATC"B" .01µF C5 0.4µH T2 L2 RF Output C4 Q1 RF Input 0.5µH L1 C6 BFC1 T1 2:1 .01µF ATC"B" 25-240pF C1 75-480pF +Vbias R1 ATC"B" .01µF R3 3.3K 3.3K R2 Q2 C7 C2 T3 3.3K .1µF C8 RFC1 .01µF ATC"B" C9 C3 .1µF C10 .01µF C11 + .1µF VDD = 50V Idq = 0.4A 10µF (50V) Parts List C1 = 75-480pF Compression Mica C2, C3 & C10 = .1µF @ 50V, Novacap #1210B104K500N C4 = 25-240pF Compression Mica C5, C6, C7, C8 & C9 = .01µF @ 50V, Novacap #1210B103K500N C11 = 10µF @ 50V Electrolytic R1, R2 & R3 = 1KΩ, 5%, 1/4W, Carbon Q1 = ARF440 Q2 = ARF441 L1 = 7.5 T of #18AWG, ID = .438", L = 0.5µH L2 = 6.5 T of #18AWG, ID = .438", L = 0.4µH 050-4406 Rev C BFC1 = Balanced DC Feed Choke; 7 T of #18 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. µi = 125 RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. µi = 2000 T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. µi = 850 T2 & 3 = 1:4 Z Transmission Line Transformer; 6 T of mini 25Ω PTFE coax on a Fair-Rite #2643102002 shield bead. µi = 2000 PCB = .062" G10 Epoxy Glass. ARF440/441 RF POWER OUT (WATTS) 300 Performance of aTypical Push-Pull Power Amplifier (2-Devices) f = 13.56 MHz V = 50V 250 DD I DQ = 400mA - 200mA / Side 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RF POWER IN (WATTS) Figure 1, RF Power Out vs RF Power In TJ = +25°C 8 TJ = +125°C 4 TJ = +125°C TJ = +25°C TJ = -55°C ID, DRAIN CURRENT (AMPERES) 5.0 re N) He (O n tio R DS a r y pe B O ited m Li 1 .5 TC =+25°C TJ =+150°C 1 5 10 50 100 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Maximum DC Safe Operating Area DS =V GS 1.1 1.0 0.9 0.8 0.7 -50 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 20 .1 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 12 5 4.5 Figure 2, RF Power Out vs RF Power In V VDS = 30V 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 3, Threshold Voltage vs Temperature BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) TJ = -55°C 10 4.0 1.2 16 0 3.5 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5, Breakdown Voltage vs Temperature 1,000 Ciss 500 Coss Crss 100 50 .01 .05 .1 .5 1 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Capacitance vs. Drain-To-Source Voltage 10 50 050-4406 Rev C C, CAPACITANCE (pF) 3,000 ARF440/441 TO-247AD Package Outline ARF440 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44E 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) GATE SOURCE DRAIN 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) ARF441 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44O 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) DRAIN SOURCE GATE 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 050-4406 Rev C NOTE: The ARF440 and ARF441 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388 -0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61