ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 250 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS Symbol Parameter VDSS Drain-Source Voltage VDGO Drain-Gate Voltage ID A IN Y R All Ratings: TC = 25°C unless otherwise specified. M I L Continuous Drain Current @ TC = 25°C E R ARF461A/B UNIT 1000 Volts 1000 6.5 Amps ±30 Volts VGS Gate-Source Voltage PD Total Power Dissipation @ TC = 25°C 250 Watts Junction to Case 0.50 °C/W RqJC TJ,TSTG TL P -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 TYP MAX UNIT 1000 Volts (I D(ON) = 3.25A, VGS = 10V) 6.5 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 Forward Transconductance (VDS = 25V, ID = 3.25A) 3 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 4 nA mhos 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-5987 Rev A 7-2001 Symbol DYNAMIC CHARACTERISTICS Symbol ARF461A/B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN Turn-off Delay Time Fall Time MAX UNIT 1700 VGS = 0V Rise Time TYP VDS = 50V 175 f = 1 MHz 50 VGS = 15V 8 VDD = 0.5 VDSS 5 ID = ID[Cont.] @ 25°C 21 RG = 1.6W 10.1 pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 250V Pout = 150W 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 25 A IN 5 0 30 ID, DRAIN CURRENT (AMPERES) 050-5987 Rev A 7-2001 8 6 P 5000 Ciss 1000 500 Coss Crss 100 10 .1 .5 1 5 10 50 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 26 TJ = -55°C 100uS VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 4 2 TJ = +125°C Y R 50 TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) GAIN (dB) 10 E R CAPACITANCE (pf) Pout = 150W 20 15 M I L Class C VDD = 150V UNIT No Degradation in Output Power APT Reserves the right to change, without notice, the specifications and information contained herein. 30 MAX 10 OPERATION HERE LIMITED BY RDS (ON) 5 1mS 10mS 1 .5 .1 100mS TC =+25°C TJ =+150°C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC ARF461A/B 25 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 GPS, COMMON SOURCE AMPLIFIER GAIN (dB) f = 81.36 MHz 120 80 40 0 0 2 D=0.5 0.1 P 0.2 0.1 0.05 0.05 E R 5V 4.5V 5 4V 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 14 Class C VDD = 150V 12 f = 81.36 MHz 10 A IN 8 Y R 6 0 Note: 0.02 0.01 10 0.01 SINGLE PULSE t1 0.005 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 Zin (Ω) ZOL (Ω) 20.4 - j 9.6 2.1 - j 6.4 .50 - j 2.3 .20 - j 0.4 .46 + j 2.0 148 - j 20 84 - j 74 36 - j 63 19 - j 48 7.7 - j 30 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 250V 050-5987 Rev A 7-2001 Z JC, THERMAL IMPEDANCE (°C/W) q M I L 5.5V 40 80 120 160 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 0.6 15 PDM POUT, POWER OUT (WATTS) Class C VDD = 150V 6V 0 0.7 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 160 VGS=15, 10, 8 & 6.5V 20 ARF461A/B L4 Bias 0 - 12V + - C7 L3 C6 RF Input R1 C4 C9 C5 + C1 -- 1800pF + 1000pF 100V chips 250V mounted at gate lead - C8 L1 L2 C1 R2 C2 C3 DUT 40.68 MHz Test Circuit P 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) E R M I L A IN Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-5987 Rev A 7-2001 Y R TO-247 Package Outline 20.80 (.819) 21.46 (.845) Source C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 mF 500V ceramic chip C9 -- 2200 pF 500 V chip RF L1 -- 4t #20 AWG .25"ID .3 "L ~80nH Output L2 -- 7t #16 AWG .4" ID .5"L ~335nH L3 -- 25t #24 AWG .25"ID ~2.2uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF461A/B 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058