ARF464A ARF464B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 65 Volt, 81.36 MHz Characteristics: • Output Power = 100 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS Symbol Parameter VDSS Drain-Source Voltage VDGO Drain-Gate Voltage ID A IN Y R All Ratings: TC = 25°C unless otherwise specified. M I L Continuous Drain Current @ TC = 25°C E R ARF464A/B UNIT 200 Volts 200 15 Amps ±30 Volts VGS Gate-Source Voltage PD Total Power Dissipation @ TC = 25°C 180 Watts Junction to Case 0.70 °C/W RqJC TJ,TSTG TL P -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 200 On State Drain Voltage 1 TYP MAX UNIT Volts (I D(ON) = 7.5A, VGS = 10V) 3.0 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7.5A) 2 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 ±100 nA 5 mhos 5 Volts 3.5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-5999 Rev - 7-2001 Symbol DYNAMIC CHARACTERISTICS Symbol ARF464A/B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 775 1000 VDS = 150V 340 480 f = 1 MHz 150 230 VGS = 15V 6 12 VDD = 0.5 VDSS 9 18 ID = ID[Cont.] @ 25°C 13 20 RG = 1.6W 3.4 10 MAX VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 81.36 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 65V Pout = 100W 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 25 A IN NOT UPDATED 10 5 0 30 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency ID, DRAIN CURRENT (AMPERES) 4 2 TJ = +125°C TJ = -55°C TJ = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics 1000 Ciss 500 Coss Crss 100 50 60 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 3000 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 8 050-5999 Rev - 7-2001 E R ID, DRAIN CURRENT (AMPERES) GAIN (dB) P 15 CAPACITANCE (pf) Pout = 150W 20 6 M I L Class C VDD = 150V Y R No Degradation in Output Power APT Reserves the right to change, without notice, the specifications and information contained herein. 30 UNIT OPERATION HERE LIMITED BY RDS (ON) 1mS 10 5 10mS TC =+25°C TJ =+150°C SINGLE PULSE 1 1 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 100mS DC ARF464A/B 25 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature f = 81.36 MHz 120 80 40 0 0 2 0.8 D=0.5 0.2 0.1 0.05 P 0.1 0.05 E R 0.02 7V 10 6.5V 6V 5 5.5V 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 14 Class C VDD = 150V 12 f = 81.36 MHz 10 A IN 8 Y R 6 0 40 80 120 160 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out Note: 0.01 0.01 SINGLE PULSE t1 0.005 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) Zin (Ω) ZOL (Ω) 2.0 13.5 27 40 65 80 100 24 - j 5 7.5 - j 11 2.0 - j 6.2 0.7 - j 3.1 0.31 + j 0.52 0.47 + j 2.1 0.9 + j 3.8 15.3 - j 0.6 14.2 - j 3.4 11.6 - j 5.3 8.9 - j 5.6 5.3 - j 4.0 4.0 - j 2.7 2.8 - j 0.9 Zin - Gate shunted with 25Ω IDQ = 50mA ZOL - Conjugate of optimum load for 100 Watts output at Vdd = 65V 050-5999 Rev - 7-2001 Z JC, THERMAL IMPEDANCE (°C/W) q M I L 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 8V 7.5V PDM POUT, POWER OUT (WATTS) Class C VDD = 150V VGS=10 & 15V 15 0 GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 160 20 ARF464A/B L4 + 65V - C7 Bias 0 - 12V C6 L3 C8 C5 RF Output R1 RF Input L2 C2 L1 C4 C1 -- 560pF NPO 50V chip mounted at gate lead C2-C3 -- Arco 424 Mica trimmer C4-C5 -- Arco 463 Mica trimmer C5-C8 -- 10nF 500V COG chip L1 -- 3t #18 .25" ID .3"L ~48nH L2 -- 3t #16 AWG .25" ID .35"L ~68nH L3 -- 10t #18 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R2 -- 50 Ohm 1/2W Carbon DUT = ARF464A/B DUT R2 C3 C1 81.36 MHz Test Circuit P 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) E R M I L A IN TO-247 Package Outline Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC Source 20.80 (.819) 21.46 (.845) Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-5999 Rev - 7-2001 Y R 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058