ARF521 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165V 150W 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • Specified 125 Volt, 81MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 50% • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Industry standard package • Low Vth thermal coefficient MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter ARF521 UNIT Drain-Source Voltage 500 Volts Continuous Drain Current @ TC = 25°C 10 Amps VGS Gate-Source Voltage ±30 Volts PD Total Device Dissipation @ TC = 25°C 250 Watts TJ,TSTG TL -55 to 175 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS g fs VGS(TH) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 Drain-Source On-State Resistance 1 TYP MAX Volts 0.56 (ID(ON) = 5A, VGS = 10V) 8 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) 250 ±100 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 5A) 3 Gate Threshold Voltage (VDS = VGS, ID = 200mA) 2 UNIT Ohms µA nA mhos 3.6 4 Volts MAX UNIT THERMAL CHARACTERISTICS MIN RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) TYP 0.60 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com °C/W 2-2006 Characteristic 050-4930 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol ARF521 Test Conditions Characteristic MIN TYP MAX 780 900 Ciss Input Capacitance Coss VGS = 0V Output Capacitance 125 150 Crss VDS = 50V Reverse Transfer Capacitance f = 1 MHz 7 10 td(on) Turn-on Delay Time VGS = 15V 5.1 10 VDD = 0.5 VDSS 4.1 8 ID = ID[Cont.] @ 25°C 12 18 RG = 1.6 Ω 4.0 7 MAX tr td(off) tf Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 81MHz 14 15 dB 50 55 % Idq = 50mA η Drain Efficiency ψ Electrical Ruggedness VSWR 5:1 VDD = 125V UNIT No Degradation in Output Power Pout = 150W 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. 3000 25 Class AB VDD = 125V 15 ID, DRAIN CURRENT (AMPERES) 2-2006 050-4930 Rev A 25 50 75 100 125 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 50 Crss 10 OPERATION HERE LIMITED BY RDS (ON) TJ = -55°C 20 TJ = +25°C 15 10 TJ = -55°C TJ = +125°C 0 100 40 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 5 Coss 1 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 25 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) 10 0 30 500 CAPACITANCE (pf) GAIN (dB) 20 Ciss 1000 Pout = 150W 100us 10 5 1ms 1 10ms 100ms DC .5 .1 TC =+25°C TJ =+175°C SINGLE PULSE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ID, DRAIN CURRENT (AMPERES) 1.05 1.00 0.95 0.90 -50 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 11V 10V 20 9V 15 8V 10 7V 5 0 -25 12V 25 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.70 0.60 D = 0.9 0.50 0.7 0.40 0.5 Note: PDM 0.30 0.3 0.20 t1 t2 0.1 Peak TJ = PDM x ZθJC + TC 0.05 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Transient Thermal Impedance RC Model TJ (°C) TC (°C) 0.256 0.213 0.131 Dissipated Power (Watts) 0.00496F 0.0590F ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 0.635F Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 80 100 Zin (Ω) ZOL (Ω) 24 - j 4.5 8.3 - j 11.6 2.5 - j 7.1 1.0 - j 4.2 .30 - j 1.1 .25 + j 0.3 .35 + j 1.6 55 - j 4 45 - j 22 28.7 - j 28 17.9 - j 26 9.0 - j 20.6 5.8 - j 17 4 - j 14.2 Idq = 50mA Zin - Gate shunted with 25Ω ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 125V 2-2006 0 Duty Factor D = t1/t2 SINGLE PULSE 050-4930 Rev A 0.10 ZEXT VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ARF521 30 1.10 ARF521 ARF521 Test Circuit 81.36 MHz L4 C12 +125V R1 Bias 0 - 12V C9 C8 L3 R2 C7 R3 C2 RF Input C10 C11 RF Output L2 L1 C6 TL1 DUT C13 C1 C3 C5 C4 Gate Bias C1 - Arco 406 Mica trimmer C2 - 220pF Semco metal clad C3 - Arco 464 Mica trimmer C4 - 820pF ATC 700B C5- 1000pF ATC 700B C6 - Arco 463 Mica trimmer C7-C10 10nF 500V chip C11-C13 1nF NPO 500V TL1 - .23" x 1.5" stripline L1 -- 2t #18 .3" ID .2"L ~50nH L2 -- 3t #16 AWG .31" ID .3"L ~65nH L3 -- 10t #22 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R3 -- 1k Ohm 1/4W Carbon DUT = ARF521 Vdd Power ARF521 Test Fixture 2-22-02 rf Hazardous Material Warning .5" SOE Package Outine The ceramic portion of the device between the leads and the mounting flange is beryllium oxide, BeO. BeO dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices should never be thrown away with general industrial or domestic waste. A U M Q 2. CONTROLLING DIMENSION: INCH. 1 M 4 R 2 B PIN 1. 2. 3. 4. SOURCE GATE SOURCE DRAIN 3 050-4930 Rev A 2-2006 D K J H E DIM A B C D E H J K M Q R U INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 45° NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.0 45° NOM 2.93 3.30 6.25 6.47 18.29 18.54 C Seating Plane APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.