ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF power transistor making the pair well suited for bridge configurations • Specified 125 Volt, 27 MHz Characteristics: Output Power = 300 Watts. • High Performance • High Voltage Breakdown and Large SOA Gain = 15dB (Class E) for Superior Ruggedness Efficiency = 80% • Low Thermal Resistance. • RoHS Compliant • Capacitance matched with ARF301 P-Channel Maximum Ratings Symbol All Ratings: TC =25°C unless otherwise specified Parameter Ratings VDSS Drain-Source Voltage 500 VDGO Drain-Gate Voltage 500 ID Unit V Continuous Drain Current @ TC = 25°C 24 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 1000 W TJ, TSTG TL Operating and Storage Junction Temperature Range -55 to 175 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Symbol Parameter Min BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 500 VDS(ON) On State Drain Voltage 1 (ID(ON) = 12A, VGS = 10V) Typ Max 3 4 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 15V, ID = 12A) IDSS VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 10mA) 5 8 2.5 4 Min Typ Unit V μA nA mhos 5 Volts Max Unit Symbol RθJC RθJHS Parameter Junction to Case 0.15 Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.27 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com °C/W 050-4948 Rev B 9-2010 Thermal Characteristics Dynamic Characteristics Symbol ARF300 Parameter Test Conditions Min Typ Max CISS Input Capacitance VGS = 0V 1890 2100 Coss Output Capacitance VDS = 50V 350 390 Crss Reverse Transfer Capacitance f = 1MHz 75 90 Max Unit pF Functional Characteristics Symbol GPS Characteristic Common Source Amplifier Power Gain η Drain Efficiency Ψ Test Conditions Min Typ f = 27MHz 15 17 dB Idq = 0mA VDD = 125V 80 85 % POUT = 300W Electrical Ruggedness VSWR 10:1 No Damage 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Dynamic Characteristics 60 ID, DRAIN CURRENT (AMPERES) 1.0E−8 CAPACITANCE Ciss 1.0E−9 Coss 1.0E−10 Crss VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 50 TJ = -55°C 40 TJ = +25°C 30 20 10 TJ = +125°C 1.0E−11 0 50 100 150 200 250 0 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics Rd s O n BVdss Line ID Max 10 100µs 1ms Lin e 050-4948 Rev B 9-2010 OPERATION HERE (ON) LIMITED BY R DS PD ID, DRAIN CURRENT (AMPERES) 100 1 TC =+25°C TJ =+175°C SINGLE PULSE 10ms 100ms 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area Unit Dynamic Characteristics 8 ID, DRAIN CURRENT (AMPERES) 7 6 5 4 3 2 1 0 -50 0 50 100 15V 50 10V 8V 40 7.5V 30 6.5V 20 6V 10 0 150 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature 0.16 0.14 D = 0.9 0.12 0.7 0.10 0.5 0.08 0.06 0.3 0.04 0.1 0.02 SINGLE PULSE 0.05 0 10-3 10-1 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 TJ (˚C) TC (˚C) 0.068 0.062 0.019 Dissipated Power (Watts) 0.0150 0.135 ZEXT 2.133 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 6b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) Zin (Ω) ZOL (Ω) 2.0 18 - j 10.5 21 - j 1.4 13.56 2.66 - j 4.6 17.5 - j 7.8 27.12 1.79 - j 1.6 11.7 - j 10.4 40.68 1.68 - j 0.14 7.7 - j 10 ZIN - Gate shunted with 25Ω Idq = 0 ZOL - Conjugate of optimum load for 300 Watts output at Vdd=125V 050-4948 Rev B 9-2010 VGS(th), THRESHOLD VOLTAGE ARF300 60 ARF300 T11 Package Outline 1.141 0.04 0.16 Use 4-40 (M3) screws for mounting. Torque = 4-6 in-lb (0.45- 0.7 Nm). 0.009 0.963 0.135 0.890 0.237 S D S R0.125 0.507 0.257 0.980 D 0.125 ATTENTION: This is a high power device. Special considerations must be followed in mounting to ensure proper operation of these devices. Incorrect mounting can cause internal temperatures to exceed the maximum allowable operating junction temperature. Refer to Microsemi Application Note #1810 before starting system design. http://www.microsemi.com/support/ micnotes/1810.pdf R0.050 050-4948 Rev B 9-2010 S 0.100 x 4 G S 0.140 x 6 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.