Standard Products
QCOTSTM UT9Q512K32 16Megabit SRAM MCM
Data Sheet
June, 2003
FEATURES
q 25ns maximum (5 volt supply) address access time
q Asynchronous operation for compatible with industry
standard 512K x 8 SRAMs
q TTL compatible inputs and output levels , three-state
bidirectional data bus
q Typical radiation performance
- Total dose: 50krads
- SEL Immune >80 MeV-cm2 /mg
- LET TH(0.25) = >10 MeV-cm 2/mg
- Saturated Cross Section (cm2) per bit, 5.0E -9
- <1E-8 errors/bit-day, Adams 90% geosynchronous
heavy ion
q Packaging options:
- 68-lead dual cavity ceramic quad flatpack (CQFP) (weight 7.37 grams)
q Standard Microcircuit Drawing 5962-01511
- QML T and Q compliant part
INTRODUCTION
The QCOTSTM UT9Q512K32 Quantified Commercial
Off-the-Shelf product is a high-performance 2M byte
(16Mbit) CMOS static RAM multi-chip module (MCM),
organized as four individual 524,288 x 8 bit SRAMs with a
common output enable. Memory expansion is provided by
an active LOW chip enable (En), an active LOW output
enable (G), and three-state drivers. This device has a powerdown feature that reduces power consumption by more than
90% when deselected.
Writing to each memory is accomplished by taking chip
enable (En) input LOW and write enable ( Wn) inputs LOW.
Data on the eight I/O pins (DQ0 through DQ 7 ) is then written
into the location specified on the address pins (A0 through
A18 ). Reading from the device is accomplished by taking
chip enable (En) and output enable ( G) LOW while forcing
write enable (Wn) HIGH. Under these conditions, the
contents of the memory location specified by the address
pins will appear on the I/O pins.
The input/output pins are placed in a high impedance state
when the device is deselected (En HIGH), the outputs are
disabled (G HIGH), or during a write operation (En LOW
and Wn LOW). Perform 8, 16, 24 or 32 bit accesses by
making Wn along with En a common input to any
combination of the discrete memory die.
E3
W3
E2
W2
E1
W1
W0
E0
A(18:0)
G
512K x 8
512K x 8
DQ(31:24)
or
DQ3(7:0)
DQ(23:16)
or
DQ2(7:0)
512K x 8
DQ(15:8)
or
DQ1(7:0)
Figure 1. UT9Q512K32 SRAM Block Diagram
512K x 8
DQ(7:0)
or
DQ0(7:0)
NC
A0
A1
A2
A3
A4
A5
E2
V SS
E3
W0
A6
A7
A8
A9
A10
VDD
DEVICE OPERATION
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
60
59
58
57
56
Top View
55
54
53
52
51
50
49
48
47
46
45
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
The UT9Q512 has three control inputs called Enable 1 (En),
Write Enable (Wn), and Output Enable (G); 19 address inputs,
A(18:0); and eight bidirectional data lines, DQ(7:0). En Device
Enable controls device selection, active, and standby modes.
Asserting En enables the device, causes I DD to rise to its active
value, and decodes the 19 address inputs to select one of 524,288
words in the memory. Wn controls read and write operations.
During a read cycle, G must be asserted to enable the outputs.
DQ0(2)
DQ1(2)
DQ2(2)
DQ3(2)
DQ4(2)
DQ5(2)
DQ6(2)
DQ7(2)
VSS
DQ0(3)
DQ1(3)
DQ2(3)
DQ3(3)
DQ4(3)
DQ5(3)
DQ6(3)
DQ7(3)
Table 1. Device Operation Truth Table
V DD
A11
A12
A13
A14
A15
A16
E0
G
E1
A17
W1
W2
W3
A18
NC
NC
DQ0(0)
DQ1(0)
DQ2(0)
DQ3(0)
DQ4(0)
DQ5(0)
DQ6(0)
DQ7(0)
V SS
DQ0(1)
DQ1(1)
DQ2(1)
DQ3(1)
DQ4(1)
DQ5(1)
DQ6(1)
DQ7(1)
Figure 2. 25ns SRAM Pinout (68)
DQn(7:0)
En
Address
Data Input/Output
Enable
Wn
En
I/O Mode
Mode
X1
X
1
3-state
Standby
X
0
0
Data in
Write
1
1
0
3-state
Read2
0
1
0
Data out
Read
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
PIN NAMES
A(18:0)
G
Wn
G
Write Enable
READ CYCLE
Output Enable
A combination of Wn greater than VIH (min) and En less than
V IL (max) defines a read cycle. Read access time is measured
from the latter of Device Enable, Output Enable, or valid address
to valid data output.
V DD
Power
VSS
Ground
SRAM Read Cycle 1, the Address Access in figure 3a, is
initiated by a change in address inputs while the chip is enabled
with G asserted and Wn deasserted. Valid data appears on data
outputs DQ(7:0) after the specified t AVQV is satisfied. Outputs
remain active throughout the entire cycle. As long as Device
Enable and Output Enable are active, the address inputs may
change at a rate equal to the minimum read cycle time (tAVAV ).
SRAM read Cycle 2, the Chip Enable - Controlled Access in
figure 3b, is initiated by En going active while G remains
asserted, Wn remains deasserted, and the addresses remain
stable for the entire cycle. After the specified t ETQV is satisfied,
the eight-bit word addressed by A(18:0) is accessed and appears
at the data outputs DQ(7:0).
SRAM read Cycle 3, the Output Enable - Controlled Access in
figure 3c, is initiated by G going active while En is asserted, Wn
is deasserted, and the addresses are stable. Read access time is
tGLQV unless t AVQV or tETQV have not been satisfied.
2
WRITE CYCLE
TYPICAL RADIATION HARDNESS
A combination of Wn less than VIL(max) and En less than
VIL(max) defines a write cycle. The state of G is a “don’t care”
for a write cycle. The outputs are placed in the high-impedance
state when eitherG is greater than V IH(min), or when Wn is less
than VIL (max).
The UT9Q512K32 SRAM incorporates features which allows
operation in a limited radiation environment.
Table 2. Radiation Hardness
Design Specifications 1
Write Cycle 1, the Write Enable-controlled Access is defined
by a write terminated by Wn going high, with En still active.
The write pulse width is defined by tWLWH when the write is
initiated byWn, and by t ETWH when the write is initiated by En.
Unless the outputs have been previously placed in the highimpedance state byG, the user must wait t WLQZ before applying
data to the nine bidirectional pins DQ(7:0) to avoid bus
contention.
Total Dose
50
krad(Si)
Heavy Ion
Error Rate2
<1E-8
Errors/Bit-Day
Notes:
1. The SRAM will not latchup during radiation exposure under recommended
operating conditions.
2. 90% worst case particle environment, Geosynchronous orbit, 100 mils of
Aluminum.
Write Cycle 2, the Chip Enable-controlled Access is defined by
a write terminated by the latter of En going inactive. The write
pulse width is defined by tWLEF when the write is initiated by
Wn, and by t ETEF when the write is initiated by the En going
active. For the Wn initiated write, unless the outputs have been
previously placed in the high-impedance state by G, the user
must wait tWLQZ before applying data to the eight bidirectional
pins DQ(7:0) to avoid bus contention.
3
ABSOLUTE MAXIMUM RATINGS1
(Referenced to VSS )
SYMBOL
PARAMETER
LIMITS
VDD
DC supply voltage
-0.5 to 7.0V
V I/O
Voltage on any pin
-0.5 to 7.0V
TSTG
Storage temperature
-65 to +150°C
PD
Maximum power dissipation
TJ
Maximum junction temperature 2
+150°C
Thermal resistance, junction-to-case3
10°C/W
DC input current
±10 mA
ΘJC
II
1.0W (per byte)
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
2. Maximum junction temperature may be increased to +175°C during burn-in and steady-static life.
3. Test per MIL-STD-883, Method 1012.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
VDD
Positive supply voltage
4.5 to 5.5V
TC
Case temperature range
-40 to +125°C
VIN
DC input voltage
0V to V DD
4
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(-40°C to +125°C) (V DD = 5.0V + 10%)
SYMBOL
PARAMETER
V IH
High-level input voltage
V IL
Low-level input voltage
V OL1
Low-level output voltage
V OL2
CONDITION
MIN
MAX
2.0
UNIT
V
0.8
V
IOL = 8mA, V DD =4.5V
0.4
V
Low-level output voltage
IOL = 200µA,VDD =4.5V
0.08
V
VOH1
High-level output voltage
IOH = -4mA,VDD =4.5V
2.4
V
VOH2
High-level output voltage
IOH = 200µA,V DD =4.5V
3.0
V
CIN 1
Input capacitance
ƒ = 1MHz @ 0V
32
pF
CIO 1
Bidirectional I/O capacitance
ƒ = 1MHz @ 0V
16
pF
IIN
Input leakage current
VIN = V DD and VSS, V DD = V DD (max)
-2
2
µA
I OZ
Three-state output leakage current
VO = VDD and VSS
-2
2
µA
-90
90
mA
125
mA
180
mA
-40°C and
25°C
6
mA
125°C
12
mA
VDD = VDD (max)
G = V DD (max)
IOS 2, 3
IDD (OP)
Short-circuit output current
VDD = VDD (max), V O = VDD
VDD = VDD (max), V O = 0V
Supply current operating
@ 1MHz
(per byte)
Inputs: VIL = 0.8V,
VIH = 2.0V
IOUT = 0mA
VDD = VDD (max)
I DD1(OP)
Supply current operating
@40MHz
(per byte)
Inputs: VIL = 0.8V,
VIH = 2.0V
IOUT = 0mA
VDD = VDD (max)
IDD2 (SB)
Supply current standby
@0MHz
(per byte)
Inputs: VIL = VSS
IOUT = 0mA
E1 = V DD - 0.5, VDD = VDD (max)
VIH = V DD - 0.5V
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 .
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
5
AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(-40°C to +125°C) (V DD = 5.0V + 10%)
SYMBOL
PARAMETER
MAX
MIN
25
UNIT
tAVAV 1
Read cycle time
tAVQV
Read access time
tAXQX 2
Output hold time
3
ns
tGLQX 2
G-controlled Output Enable time
3
ns
tGLQV
G-controlled Output Enable time (Read Cycle 3)
10
ns
tGHQZ 2
G-controlled output three-state time
10
ns
25
En-controlled Output Enable time
tETQX 2,3
tETQV 3
tEFQZ 1 ,2 ,4
ns
3
ns
ns
En-controlled access time
25
ns
En-controlled output three-state time
10
ns
Notes: * Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 500mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge of En. SEU immunity does not affect the read parameters.
High Z to Active Levels
Active to High Z Levels
VH - 500mV
VLOAD + 500mV
}
VLOAD
{
{
}
VLOAD - 500mV
VL + 500mV
Figure 3. 5-Volt SRAM Loading
6
tAVAV
A(18:0)
DQn(7:0)
Previous Valid Data
Valid Data
tAVQV
tAXQX
Assumptions:
1 . En and G < V IL (max) and Wn > V IH (min)
Figure 4a. SRAM Read Cycle 1: Address Access
A(18:0)
En
tETQV
t ETQX
tEFQZ
DQn(7:0)
DATA VALID
Assumptions:
1. G < V IL (max) and Wn > V IH (min)
Figure 4b. SRAM Read Cycle 2: Chip Enable -Controlled Access
t AVQV
A(18:0)
G
tGHQZ
tGLQX
DATA VALID
DQn(7:0)
tGLQV
Assumptions:
1 . En < VIL (max) andW n > V IH (min)
Figure 4c. SRAM Read Cycle 3: Output Enable-Controlled Access
7
AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)*
(-40°C to +125°C) (V DD = 5.0V + 10%)
SYMBOL
PARAMETER
MIN
MAX
UNIT
tAVAV 1
Write cycle time
25
ns
tETWH
Device Enable to end of write
20
ns
tAVET
Address setup time for write (En - controlled)
1
ns
tAVWL
Address setup time for write (Wn - controlled)
0
ns
tWLWH
Write pulse width
20
ns
tWHAX
Address hold time for write (Wn - controlled)
0
ns
tEFAX
Address hold time for Device Enable (En - controlled)
0
ns
tWLQZ 2
Wn - controlled three-state time
tWHQX2
Wn - controlled Output Enable time
5
ns
tETEF
Device Enable pulse width (En - controlled)
20
ns
tDVWH
Data setup time
15
ns
tWHDX
Data hold time
0
ns
tWLEF
Device Enable controlled write pulse width
20
ns
tDVEF
Data setup time
15
ns
tEFDX
Data hold time
0
ns
tAVWH
Address valid to end of write
20
ns
Write disable time
5
ns
tWHWL1
10
Notes:
* Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019.
1. Functional test performed with outputs disabled (G high).
2 . Three-state is defined as 500mV change from steady-state output voltage.
8
ns
A(18:0)
t AVAV2
En
tAVWH
t ETWH
t WHWL
Wn
tAVWL
t WLWH
tWHAX
Qn(7:0)
tWLQZ
Dn(7:0)
tWHQX
APPLIED DATA
Assumptions:
1. G < V IL (max). If G > V IH (min) then Qn(7:0) will be
in three-state for the entire cycle.
2. G high for t AVAV cycle.
tDVWH
tWHDX
Figure 5a. SRAM Write Cycle 1: Write Enable - Controlled Access
9
tAVAV 3
A(18:0)
tETEF
t AVET
tEFAX
En
or
t AVET
En
tETEF
tEFAX
tWLEF
Wn
Dn(7:0)
APPLIED DATA
t WLQZ
t DVEF
Qn(7:0)
t EFDX
Assumptions & Notes:
1. G < V IL (max). If G > V IH (min) then Q n(7:0) will be in three-state for the entire cycle.
2. Either En scenario above can occur.
3. G high for t AVAV cycle.
Figure 5b. SRAM Write Cycle 2: Chip Enable - Controlled Access
CMOS
90%
V DD-0.05V
300 ohms
V LOAD = 1.55V
10%
0.5V
10%
< 5ns
50pF
< 5ns
Input Pulses
Notes:
1. 50pF including scope probe and test socket capacitance.
2. Measurement of data output occurs at the low to high or high to low transition mid-point
(i.e., CMOS input = V DD/2).
Figure 6. AC Test Loads and Input Waveforms
10
DATA RETENTION MODE
VDR > 2.5V
VDD
4. 5V
4.5V
tR
t EFR
E1
VDD = V DR
Figure 7. Low V DD Data Retention Waveform
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(1 Second Data retention Test)
SYMBOL
PARAMETER
V DR
VDD for data retention
MINIMUM
MAXIMUM
UNIT
2.5
--
V
5.0
mA
I DDR 1,2
Data retention current (per byte)
--
tEFR 1,3
Chip deselect to data retention time
0
ns
tAVAV
Ns
tR1,3
Operation recovery time
Notes:
1. En = V DD - .2V, all other inputs = V DR or VSS .
2. Data retention current (ID D R) Tc = 25oC.
3. Not guaranteed or tested.
4. VDR = T=-40 oC and 125 oC.
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(10 Second Data Retention Test, TC=-40oC and +125oC)
SYMBOL
V DD 1
tEFR2, 3
tR2, 3
PARAMETER
VDD for data retention
Chip select to data retention time
Operation recovery time
Notes:
1. Performed at VDD (min) and VDD (max).
2. En = V SS, all other inputs = V DR or V SS .
3. Not guaranteed or tested.
11
MINIMUM
MAXIMUM
UNIT
4.5
5.5
V
0
ns
tAVAV
ns
PACKAGING
Notes:
1. Package shipped with non-conductive
strip (NCS). Leads are not trimmed.
2. Total weight approx. 7.37g.
Figure 8. 68-pin Ceramic FLATPACK
12
ORDERING INFORMATION
512K32 16Megabit SRAM MCM:
UT9Q512K32 -* *
*
*
Lead Finish:
(C) = Gold
Screening:
(P) = Prototype flow
(W) = Extended Industrial Temperature Range Flow (-40 o C to +125o C)
Package Type:
(S) = 68-lead dual cavity CQFP
Device Type:
- =25ns access time, 5.0V operation
Aeroflex UTMC Core Part Number
Notes:
1 . Prototype flow per UTMC Manufacturing Flows Document. Devices are tested at 25 oC. Gold lead finish only.
2 . Extended Industrial Temperature Range flow per UTMC Manufacturing Flows Document. Devices are tested at -40°C to +125° C. Radiation neither
tested nor guaranteed. Gold Lead Finish Only.
13
512K32 16Megabit SRAM MCM: SMD
5962 - 01511 **
* * *
Lead Finish:
(C) = Gold
Case Outline:
(X) = 68-lead dual cavity CQFP
Class Designator:
(T) = QML Class T
(Q) = QML Class Q
Device Type
01 = 25 ns access time, 5.0V operation, Extended Industrial Temp (-40oC to +125 oC)
Drawing Number: 01511
Total Dose
(-) = none
(D) = 1E4 (10krad(Si))
(P) = 3E4 (30krad(Si)) (contact factory)
(L) = 5E4 (50krad(Si)) (contact factory)
Federal Stock Class Designator: No Options
Notes:
1. Total dose radiation must be specified when ordering. Gold finish only.
2. Only Extended Industrial temperature -40C to +125C. No military temp. test available.
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