August 2004 ASM4SSTVF16859 rev 2.0 DDR 13-Bit to 26-Bit Registered Buffer off. Note that RESETB should be supported with a Features LVCMOS level at a valid state since VREF may not be Differential clock signals. Meets SSTL_2 class II specifications on stable during power-up. outputs. To ensure that outputs are at a defined logic state before a Low voltage operation: VDD = 2.3V to 2.7V. stable clock has been supplied, RESETB must be held at a Available in 64-pin TSSOP, 64-pin TVSOP, logic low level during power-up. and 56-pin VFQFN packages. In the JEDEC defined Registered DDR DIMM application, Product Description RESETB is specified to be asynchronous with respect to The ASM4SSTVF16859 is a universal 13/26 bit CLK/CLKB; therefore, no timing relationship can be register (D F/F based), designed for 2.3V to 2.7V guaranteed between the two signals. When entering a VDD operation. The device supports SSTL_2 I/O low-power standby state, the register will be cleared and levels, and is fully compliant with the JEDEC JC40, the outputs will be driven to a logic low level quickly JC42.5 DDR I specifications covering PC1600, PC relative to the time to disable the differential input 2100, PC2700, and PC3200 operational ranges ( DDR receivers. This ensures there are no “glitches” on any 400 – 200 MHz ). 13/26 bits refers to 2Q outputs for output. However, when coming out of low power standby each D input - designed for use in Stacked Registered mode, the register will become active quickly relative to the (stacked time taken to enable the differential input receivers. When Memory Devices), Buffered DIMM applications. the data inputs are at a logic level low and the clock is stable during the low-to-high transition of RESETB until the Data flow from D to Q is controlled by the differential input receivers are fully enabled, the design ensures that clock (CLK/CLKB) and a control signal (RESETB). the outputs will remain at a logic low level. The positive edge of CLK is used to trigger the data transfer, and CLKB is used to maintain sufficient noise Applications margins, whereas RESETB input is designed and • intended for use at power-up. The ASM4SSTVF16859 supports a low power standby JEDEC and Non-JEDEC DDR Memory Modules • Stacked or Planar configurations. • Supports PC1600 - PC2100 - PC2700 - PC3200 • DDR 400 compliant (200MHz+). mode of operation. A logic level low at RESETB, • SSTL_2 I/O. assures that all internal registers and outputs (Q) are • Provides a complete support solution for JEDEC reset to a logic low state, and that all input receivers, JC42.5 DIMMs’ when used with the ASM5CVF857 data (D) buffers, and clock (CLK/CLKB) are switched Zero Delay Buffer. Alliance Semiconductor 2575, Augustine Drive Santa Clara, CA Tel: 408.855.4900 Fax: 408.855.4999 www.alsc.com Notice: The information in this document is subject to change without notice. August 2004 ASM4SSTVF16859 rev 2.0 Block Diagram ASM4SSTVF16859 CLK CLKB RESETB D1 VREF R CLK D1 Q1A Q1B To 12 other channels DDR 13-Bit to 26-Bit Registered Buffer 1 of 16 August 2004 ASM4SSTVF16859 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 VDDQ GND D13 D12 VDD VDDQ GND D11 D10 D9 GND D8 D7 RESETB GND CLKB CLK VDDQ VDD VREF D6 GND D5 D4 D3 GND VDDQ VDD D2 D1 GND VDDQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 ASM4SSTVF16859 42 41 40 39 38 37 36 35 34 33 32 31 30 29 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 43 44 45 46 47 48 49 50 51 52 53 54 55 56 Q13A Q12A Q11A Q10A Q9A VDDQ GND Q8A Q7A Q6A Q5A Q4A Q3A Q2A GND Q1A Q13B VDDQ Q12B Q11B Q10B Q9B Q8B Q7B Q6B GND VDDQ Q5B Q4B Q3B Q2B Q1B ASM4SSTVF16859 rev 2.0 Pin Configurations 56-pin VFQFN (MLF2) 64-pin TSSOP 6.10 mm body, 0.50 mm pitch DDR 13-Bit to 26-Bit Registered Buffer 2 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Pin Descriptions 64-pin TSSOP Pin # Pin Name Type Description 1, 2, 3, 4, 5, 8, 9, 10, 11, 12, 13, 14, 16, Q (13:1) O Data output. 7, 15, 26, 34, 39, 43, 50, 54, 58, 63 GND P Ground to entire chip. 6, 18, 27, 33, 38, 47, 59, 64 VDDQ P Output supply voltage, 2.5V nominal. 35, 36, 40, 41, 42, 44, 52, 53, 55, 56, 57, D(13:1) I Data input. 48 CLK I Positive master clock input. 49 CLKB I Negative master clock input. 37, 46, 60 VDD P Core supply voltage, 2.5V nominal. 51 RESETB I Rest Active low. 45 VREF I Input reference voltage, 1.25V nominal. 17, 19, 20, 21, 22, 23, 24, 25, 28, 29, 30, 31, 32 61, 62 56-pin MLF2 Pin # Pin Name Type Description 1, 2, 3, 4, 5, 6, 7, 8, 10, 11, 12, 13, 14, 15, 16, Q (13:1) O Data output. 37, 48 GND P Ground to entire chip. 9, 17, 23, 27, 34, 44, 49, 55 VDDQ P Output supply voltage, 2.5V nominal. 24, 25, 28, 29, 30, 31, 39, 40, 41, 42, 43, 46, 47 D(13:1) I Data input. 35 CLK I Positive master clock input. 36 CLKB I Negative master clock input. 26, 33, 45 VDD P Core supply voltage, 2.5V nominal. 38 RESETB I Rest Active low. 32 VREF I Input reference voltage, 1.25V nominal. - Center Pad P Ground (VFQFN package only) 18, 19, 20, 21, 22, 50, 51, 52, 53, 54, 56 DDR 13-Bit to 26-Bit Registered Buffer 3 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Truth Table Inputs Q Outputs RESETB CLK CLKB D Q L X or floating X or floating X or floating L H H H H L L X Q 02 H L or H L or H Note: 1. H=High signal level, L=Low signal level, = transition from low to high, = transition from high to low, X = don’t care 2. Output level before the indicated steady state input conditions were established. 1 Absolute Maximum Ratings Min Max Unit Storage Temperature Parameter -65 +150 °C Supply Voltage -0.5 3.6 V -0.5 VDD + 0.5 V -0.5 VDD + 0.5 V 1 Input Voltage 1,2 Output Voltage Input Clamp Current ± 50 mA Output Clamp Current ±50 mA Continuous Output Current ±50 mA 100 mA 55 °C/W VDD, VDDQ or GND current/pin 3 Package Thermal Impedance Note: 1. The input and output negative voltage ratings may be excluded if the input and output clamp ratings are observed. 2. This current will flow only when the output is in the high state level V0 > VDDQ. 3. The package thermal impedance is calculated in accordance with JESD 51. These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged periods can affect device reliability. DDR 13-Bit to 26-Bit Registered Buffer 4 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Recomended Operating Conditions - DDRI / DDR333 (PC1600, PC2100, PC2700)* Parameter Description Min Typ Max Unit VDD Supply voltage 2.3 2.5 2.7 V VDDQ I/O supply voltage 2.3 2.5 2.7 V VREF Reference voltage 1.15 1.25 1.35 V VTT Termination voltage VREF - 0.04 VREF VREF + 0.004 V VI Input voltage VDD V 0 VIH(DC) DC input high voltage VREF + 0.15 V VIH(AC) AC input high voltage VREF + 0.31 V VIL(DC) DC input low voltage VIL(AC) AC input low voltage Data Inputs VIH Input high voltage level VIL Input low voltage level VICR Common mode input range VID Differential input voltage VIX Cross-point voltage of differential clock pair IOH VREF - 0.15 V VREF - 0.31 V 1.7 RESETB V CLK 0.97 CLKB 0.36 0.7 V 1.53 V V (VDDQ/2) - 0.2 (VDDQ/2) +0.2 V High-level output current -20 mA IOl Low-level output current 20 mA TA Operating free-air temperature 70 °C 0 Recomended Operating Conditions - DDRI-400 (PC3200)* Parameter Description Min Typ Max Units VDD Supply Voltage 2.5 2.6 2.7 V VDDQ I/O supply voltage 2.5 2.6 2.7 V VREF Reference voltage 1.25 1.3 1.35 V VTT Termination voltage VREF - 0.04 VREF VREF + 0.04 V VI Input voltage VDDQ V VIH(DC) DC input high voltage VIH(AC) AC input high voltage VIL(DC) DC input low voltage VIL(AC) AC input low voltage 0 Data Inputs VIH Input high voltage level VIL Input low voltage level VICR Common mode input range VID Differential input voltage VIX Cross-point voltage of differential clock pair IOH RESETB CLK, CLKB VREF + 0.15 V VREF + 0.31 V VREF - 0.15 V VREF - 0.31 V 1.7 0.97 V 0.7 V 1.53 V 0.36 (VDDQ/2) - 0.2 V (VDDQ/2) + 0.2 V High-level output current -16 mA IOL Low-level output current 16 mA TA Operating free-air temperature 70 C 0 DDR 13-Bit to 26-Bit Registered Buffer 5 of 16 August 2004 ASM4SSTVF16859 rev 2.0 * Guaranteed by design. Not 100% production tested. DC Electrical Characteristics - DDRI / DDR333 (PC1600, PC2100, PC2700) TA = 0°C to 70°C, VDD = 2.5 ± 0.2V, and VDDQ = 2.5 ± 0.2V (unless otherwise stated) Guaranteed by design. Not 100% production tested. Symbol Parameters Test conditions VDD Min Typ Units -1.2 V VIK II = -18 mA VOH IOH = -100 A 2.3 V to 2.7 V VDD - 0.2 V IOH = -16 mA 2.3 V 1.95 V IOL = 100 A 2.3 V to 2.7 V 0.2 V IOL = 16 mA 2.3 V 0.35 V VI = VDD or GND 2.7 V ±5 A Standby (static) RESETB = GND 2.7 V 0.01 A 2.7 V 25 mA VOL II IDD All inputs Operating (static) IDDD Dynamic 2.3 V Max VI = VIH(AC) or VIL(AC), RESETB = VDD RESETB = VDD, VI = VIH(AC) or 2.7 V 30 A/clock operating (clock VIL(AC), CLK and CLKB switching only) Dynamic 50% duty cycle MHz IO = 0 RESETB = VDD, VI = VIH(AC) or 2.7 V 10 /clock operating (per VIL(AC), CLK and CLKB = each data input) MHz/data switching 50% duty cycle input One data input switching at half clock frequency, 50% duty cycle rOH Output high IOH = -20 mA 2.3 V to 2.7 V 7 20 W rOL Output low IOL = 20 mA 2.3 V to 2.7 V 7 20 W rO(D) |rOH - rOL| each 4 W separate bit Ci Data inputs IO = 20 mA, TA = 25 C VI = VREF ± 310 mV, VICR = 1.25 V, 2.5 V 2.5 V 2.5 3.5 pF 2.5 V 2.5 3.5 pF 2.5V 2.5 3.5 pF VI(PP) = 360 mV CLK and CLKB RESETB VI = VDD or GND DDR 13-Bit to 26-Bit Registered Buffer 6 of 16 August 2004 ASM4SSTVF16859 rev 2.0 DC Electrical Characteristics - DDRI - 400 (PC3200) TA = 0°C to 70°C, VDD = 2.6 ± 0.2V, and VDDQ = 2.6 ± 0.2V (unless otherwise stated) Guaranteed by design. Not 100% production tested. Symbol Parameters Test conditions VIK II = -18 mA VOH IOH = -100 A VOL II All inputs IDD Standby (static) Operating (static) IDDD Typ 2.5 V Max Units -1.2 V 2.5 V to 2.7 V VDD - 0.2 V 2.5 V 1.95 V IOL = 100 A 2.5 V to 2.7 V 0.2 V IOL = 8 mA 2.5 V 0.35 V VI = VDD or GND 2.7 V ±5 A 2.7 V 0.01 A 2.7 V 25 mA RESETB = GND VI = VIH(AC) or VIL(AC), RESETB = VDD RESETB = VDD, VI = VIH(AC) or operating VIL(AC), CLK and CLKB switching Dynamic Min IOH = -8 mA Dynamic (clock only) VDD 50% duty cycle 2.7 V 30 A/clock MHz IO = 0 RESETB = VDD, VI = VIH(AC) or 2.7 V 10 /clock operating (per VIL(AC), CLK and CLKB = switching each data input) MHz/data 50% duty cycle; One data input input switching at half clock frequency, 50% duty cycle rOH Output high IOH = -16 mA 2.5 V to 2.7 V 7 20 W rOL Output low 2.5 V to 2.7 V 7 20 W rO(D) |rOH - rOL| each 4 W separate bit Data inputs Ci IOL = 16 mA IO = 20 mA, TA = 25 C VI = VREF ± 310 mV, VICR = 1.25 V, CLK and CLKB VI(PP) = 360 mV RESETB VI = VDD or GND 2.6 V 2.6 V 2.5 3.5 pF 2.6 V 2.5 3.5 pF 2.6V 2.5 3.5 pF DDR 13-Bit to 26-Bit Registered Buffer 7 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Timing Requirements** Guaranteed by design. Not 100% production tested. Symbol Parameters VDDQ = 2.5V±0.2V Min fCLOCK tW tACT* tINACT* tS Max Clock frequency Min Pulse duration, CK, CKLB high or low 270 2.5 Units Max 200 MHz 2.5 ns Differential inputs active time 22 22 ns Differential inputs inactive time 22 22 ns Data before CLK, CLKB Setup time, fast slew rate 0.75 0.4 0.9 0.6 0.75 0.4 0.9 0.6 ns Setup time, slow slew rate th VDDQ = 2.6V±0.1V Hold time, fast slew rate Data after CLK, CLKB Hold time, slow slew rate ns Note: 1. Data inputs must be low for a minimum time of tACT max, after which RESETB is taken high. 2. Data and clock inputs must be held at valid levels (not floating) for a minimum time of tINACTmax after which RESETB is taken low. 3. For data signal input slew rate >=V/ns 4. For data signal input slew rate >=0.5 V/ns and < 1V/ns 5. CLK,CLKB signals input slew rates are >=1V/ns Switching Characteristics - DDRI / DDR333 (PC1600, PC2100, PC2700)** Symbol From (input) To (output) fmax tPD tphl VDD = 2.5 V ± 0.2 V Units Min Typ Max 200 – – MHz CLK, CLKB (TSSOP) Q 1.1 2.8 ns CLK, CLKB (VFQFN[MLF2]) Q 1.1 2.8 ns RESETB Q – 5.0 ns – Switching Characteristics - DDRI-400 (PC3200)** Symbol From (input) To (output) VDD = 2.6 V ± 0.1 V Min fmax tPD Typ Max 210 CLK, CLKB (VFQFN[MLF2]) Q 1.1 Units MHz 2.2 ns Q 2.48 ns Q 3.5 ns Simultaneous switching tPDSS tphl RESETB *this parameter is not necessarily production tested. **Over recommended operating free-air temperature range unless otherwise noted. DDR 13-Bit to 26-Bit Registered Buffer 8 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Parameter Measurement Information (VDD = 2.5 V ± 0.2 V) VTT RL = 50 From output under test Test point 1 CL = 30 pF Load circuit 1 CL includes probe and jig capacitance. Voltage and Current Waveforms In the following waveforms, note that all input pulses are supplied by generators having the following characteristics: PRR 10 MHz, Zo = 50 , input slew rate = 1 V/ns ± 20% (unless otherwise specified). The outputs are measured one at a time with one transition per measurement. VTT = VREF = VDDQ/2. VIH = VREF + 310 mV (AC voltage levels) for differential inputs. VIH = VDD for LVCMOS input. VIL = VREF - 310 mV (AC voltage levels) for differential inputs. VIL = GND for LVCMOS input. tPLH and tPHL are the same as tpd. Input active and inactive times LVCMOS RESETB VDD /2 Input IDD tinact 1 VDD VDD /2 0V tact IDDH 90% 10% 1 IDDL IDD tested with clock and data inputs held at VDD or GND, and IO = 0 mA. Pulse duration tw Input VREF VREF VIH VIL Setup and hold times DDR 13-Bit to 26-Bit Registered Buffer 9 of 16 August 2004 ASM4SSTVF16859 rev 2.0 VI(pp) VICR Timing input ts Input th VREF VREF VIH VIL Propagation delay times VI(pp) Timing input VICR Output VICR tPLH tPHL VTT VTT VOH VOL LVCMOS RESETB Input VIH VDD /2 VIL tPHL Output VOH VTT VOL Output slew rates over recommended operating free-air temperature range (unless otherwise noted) Parameter From To VCC= 2.5 V + 0.2V * VCC = 2.6 V + 0.1 V * Min Max Min Max Unit dV/dt_r 20% 80% 1 4 1 4 V/ns dV/dt_f 80% 20% 1 4 1 4 V/ns 20% or 80% 80% or 20% 1 V/ns dV/dt_ 1 *For this test condition, VDDQ is always equal to VDD **Difference between dV/dt_r (rising edge rate) and dV/dt_f (falling edge rate) DDR 13-Bit to 26-Bit Registered Buffer 10 of 16 August 2004 ASM4SSTVF16859 rev 2.0 DDR 13-Bit to 26-Bit Registered Buffer 11 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Package Dimensions (64- Pin TSSOP) c N Millimeters L E1 E Index area 1 2 D A2 Seating plane e b A1 Min Max Min Max A – 1.20 – 0.047 A1 0.05 0.15 0.002 0.006 A2 0.80 1.05 0.32 0.041 b 0.17 0.27 0,007 0.011 c 0.09 0.20 0.0035 0.008 D A aaa C E E1 e 6.10 mm (240 mil) body, 0.50 mm (0.020 mil) pitch TSSOP Inches Symbol L See variations below 8.10 basic 6.00 6.20 0.50 basic 0.45 N 0.75 0.319 basic 0.236 0.244 0.020 basic 0.018 0.030 See variations below a 0 8 0 8 aaa – 0.10 – 0.004 Variations: D (mm) D (inch) N 64 Min Max Min Max 16.90 17.10 0.665 0.673 DDR 13-Bit to 26-Bit Registered Buffer 12 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Package Dimensions (56-Pin MLF2) 0.25 C A D A D/2 A2 A1 A3 D1 D1/2 0.25 C B 0.18 Dia. E1 Symbol E Common dimensions Min Typ Max 0.85 1.00 0.01 0.05 A2 0.65 0.80 A3 0.20 BSC D 8.00 BSC D1 7.75 BSC E 8.00 BSC E1 7.75 BSC A E1/2 E/2 A1 0.20 C B Seating plane 0.20 C A Top view Side view 0.00 q 0.25 C A B 4x P D2 D2/2 Pin ID 12 P 0.24 0.42 0.60 R 0.13 0.17 0.23 4x P Pitch variation D 0.35 (Ne - 1) X e E2 E2/2 L e (Nd - 1) X e e 0.50 BSC N 56 Nd 14 Ne 14 L 0.30 0.40 0.50 b 0.18 0.23 0.30 Q 0.00 0.20 0.45 D2 4.35 4.50 4.65 E2 5.05 b 5.20 5.35 Bottom view A1 Terminal tip For odd terminal/side For even terminal/side DDR 13-Bit to 26-Bit Registered Buffer Cross section 13 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Ordering Information Ordering Number Marking Package ASM4SSTVF16859-64TT AS4SSTVF16859T 64-Pin TSSOP, Tube ASM4SSTVF16859-64TR AS4SSTVF16859T 64-Pin TSSOP, Tape & Reel ASM4SSTVF16859-56QT AS4SSTVF16859Q 56-pin MLF2 - VQFN, Tube ASM4SSTVF16859-56QR AS4SSTVF16859Q 56-pin MLF2 - VQFN, Tape & Qty per Reel Temperature 0C to 70C 2500 0C to 70C 0C to 70C 2500 0C to 70C Reel DDR 13-Bit to 26-Bit Registered Buffer 14 of 16 August 2004 ASM4SSTVF16859 rev 2.0 Alliance Semiconductor Corporation 2595, Augustine Drive, Santa Clara, CA 95054 Tel# 408-855-4900 Fax: 408-855-4999 www.alsc.com Copyright ÿ Alliance Semiconductor All Rights Reserved Advance Information Part Number: ASM4SSTVF16859 Document Version: v2.0 © Copyright 2004 Alliance Semiconductor Corporation. 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