AWT6146 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.5 FEATURES InGaP HBT Technology Integrated Power Control (CMOS) Quad Band Applications +35 dBm GSM Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55% GSM850/900 PAE 50% DCS/PCS PAE Small Footprint 7mm x 7mm Low Profile 1.3mm Power Control Range >50 dB GPRS Capable (class 12) APPLICATIONS GSM850/GSM900/DCS/PCS Handsets Dual/Tri/Quad Band PDA 18 Pin 7mm x 7mm Amplifier Module PRODUCT DESCRIPTION This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. TX_EN and BS, are both 1.8 V and 3 V logic compliant. The TX_EN is used to enable the amplifier typically with the TX burst. The BS is used to select which amplifier is enabled. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. All of the RF ports for this device are internally matched to 50 W. Internal DC blocks are provided at the RF ports. The amplifiers power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. The logical control inputs, V CC2 DCS/PCS_IN DCS/PCS DCS/PCS_OUT BS TX_EN VBATT Bias and Power Control VCC_OUT VREG V RAMP GSM850/900_IN GSM850/900_OUT GSM850/900 V CC2 Figure 1: Block Diagram 11/2003 AWT6146 BS GND 1 VCC2 DCS/PCS_IN 18 17 16 DCS/PCS_OUT 2 15 GND TX_EN 3 14 GND VBATT 4 13 VCC_OUT VREG 5 12 GND VRAMP 6 11 GND GSM_IN 7 10 GSM_OUT 9 VCC 2 GND 8 Figure 2: Pinout (X- ray Top View) Table 1: Pin Description PIN 1 2 NAME DESCRIPTION PIN NAME 10 GSM_OUT Band Select Logic Input 11 GND Ground Ground DCS/PCS_IN DCS/PCS RF Input DESCRIPTION GSM850/900 RF Output 2 BS 3 TX_EN TX Enable Logic Input 12 GND 4 VBATT Battery Supply Connection 13 VCC_OUT 5 VREG Regulated Supply Connection 14 GND Ground 6 VRAMP Analog Signal used to control the output power 15 GND Ground 7 GSM_IN GSM850/900 RF Input 16 8 VC C 2 VCC Control Input for GSM850/900 Pre-amplifier 17 GND Ground 9 GND Ground 18 VC C 2 VCC Control Input for DCS/PCS Pre-amplifier Control Voltage Output which must be connected to VCC2, no decoupling DCS/PCS_OUT DCS/PCS RF Output ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 AWT6146 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VBATT) - +7 V RF Input Power (RFIN) - 11 dB m Control Voltages (VRAMP) -0.3 1.8 V Storage Temperature (TSTG) - 55 150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings PARAMETER METHOD RATINGS UNIT ESD Threshold Voltage (RF ports) HBM >250 V ESD Threshold Voltage (control inputs) HBM >2.5 kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500 W, capacitance = 100 pF. ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 3 AWT6146 Table 4: Operating Ranges PAR AME T E R MIN T YP M AX U N IT Case Temperature (TC) -20 - 85 °C Supply Voltage (VBATT) 3.0 3.5 4.8 V Regulated Voltage (VREG) 2.7 2.8 2.9 V Regulated Current (IREG) - 6 - mA TX_EN = HIGH Regulated Current (IREG) - 10 30 µA TX_EN = LOW Control Voltage for Maxi mum Power (VRAMP_MAX) - - 1.6 V Control Voltage for Mi ni mum Power (VRAMP_MIN) - 0.2 0.25 V Power Supply Leakage Current - 1 10 µA VRAMP Input Capaci tance - 3 - pF VRAMP Input Current - - 10 µA Turn ON/OFF Ti me - 1 2 µs Duty Cycle - - 50 % C OMME N T S VBATT = 4.8 V, VREG = 0 V, VRAMP = 0 V, TX_EN = LOW, No RF appli ed VRAMP = 0.2 V to VRAMP_MAX The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Table 5: Digital Inputs 4 PAR AME T E R MIN T YP M AX U N IT Logic High Voltage (VIH) 1.2 - VREG V Logic Low Voltage (VIL) - - 0.5 V Logic High Current (IIH) - - 30 µA Logic Low Current (IIL) - - 30 µA ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 AWT6146 Table 6: Electrical Characteristics for GSM850 (VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%, ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PAR AME T E R MIN T YP M AX U N IT Operati ng Frequency (FO) 824 - 849 MHz 0 3.0 5 dBm 34.5 35 - dBm Freq = 824 to 849 MHz Degraded Output Power - 33 - dBm VBATT = 3.0 V, TC = 85 °C, VREG = 2.7 V, PIN = 0 dBm PAE @ PMAX - 55 - % Forward Isolati on 1 - -35 - dBm TX_EN = LOW, PIN = 5 dBm Forward Isolati on 2 - -25 - dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Cross Isolati on (2FO @ DCS/PCS port) - -30 - dBm VRAMP = 0.2 V to VRAMP_MAX - -15 -30 - dBm Over all output power levels Input Power Output Power, PMAX Harmoni cs 2fo 3fo C OMME N T S Freq = 824 to 849 MHz VSWR = 8:1 All Phases, POUT < 34.5 dBm Stabi li ty Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz - - 10:1 RX Noi se Power - -86 - Input VSWR - - 2.5:1 All load phases, POUT < 34.5 dBm dBm FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.5 dBm Over all output power levels ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 5 AWT6146 Table 7: Electrical Characteristics for GSM900 (VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%, ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PAR AME T E R MIN T YP M AX U N IT Operati ng Frequency (FO) 880 - 915 MHz 0 3.0 5 dBm 34.5 35 - dBm Freq = 880 to 915 MHz Degraded Output Power - 33 - dBm VBATT = 3.0 V, TC = 85 °C, VREG = 2.7 V, PIN = 0 dBm PAE @ PMAX - 55 - % Forward Isolati on 1 - -35 - dBm TX_EN = LOW, PIN = 5 dBm Forward Isolati on 2 - -25 - dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Cross Isolati on (2FO @ DCS/PCS port) - -30 - dBm VRAMP = 0.2 V to VRAMP_MAX - -17 -30 - dBm Over all output power levels Input Power Output Power, PMAX Harmoni cs 2fo 3fo C OMME N T S Freq = 880 to 915 MHz VSWR = 8:1 All Phases, POUT < 34.5 dBm Stabi li ty Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz - - 10:1 - -81 - All load phases, POUT < 34.5 dBm dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm RX Noi se Power Input VSWR 6 - -86 - - - 2.5:1 Over all output power levels ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 AWT6146 Table 8: Electrical Characteristics for DCS (VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%, ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PAR AME T E R MIN T YP M AX U N IT C OMME N T S Operati ng Frequency 1710 - 1785 MHz Input Power 0 3.0 5 dBm Output Power, PMAX 32 33 - dBm Degraded Output Power - 31 - dBm VBATT = 3.0 V, TC = 85 °C, VREG = 2.7 V, PIN = 0 dBm PAE @ PMAX - 50 - % Freq = 1710 to 1785 MHz Forward Isolati on 1 - -37 - dBm TX_EN = LOW, VRAMP = 0.2 V, PIN = 5 dBm Forward Isolati on 2 - -15 - dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Harmoni cs 2fo 3fo - -17 -30 - dBm Over all output power levels VSWR = 8:1 All Phases, POUT < 32 dBm Stabi li ty Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz - - 10:1 RX Noi se Power - -86 - Input VSWR - - 2.5:1 All load phases, POUT < 32 dBm dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to 1880 MHz, POUT < 32 dBm Over all output power levels ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 7 AWT6146 Table 9: Electrical Characteristics for PCS (VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%, ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PAR AME T E R MIN T YP M AX U N IT C OMME N T S Operati ng Frequency 1850 - 1910 MHz Input Power 0 3.0 5 dBm Output Power, PMAX 32 33 - dBm Degraded Output Power - 30.5 - dBm VBATT = 3.0 V, TC = 85 °C, VREG = 2.7 V, PIN = 0 dBm PAE @ PMAX - 50 - % Freq = 1850 to 1910 MHz Forward Isolati on 1 - -35 - dBm TX_EN = LOW, VRAMP = 0.2 V, PIN = 5 dBm Forward Isolati on 2 - -15 - dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Harmoni cs 2fo 3fo - -20 -30 - dBm Over all output power levels VSWR = 8:1 All Phases, POUT < 32 dBm Stabi li ty Ruggedness 8 - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz - - 10:1 RX Noi se Power - -86 - Input VSWR - - 2.5:1 All load phases, POUT < 32 dBm dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT < 32 dBm Over all output power levels ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 AWT6146 PACKAGE OUTLINE Figure 3: Package Outline ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 9 AWT6146 NOTES 10 ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 AWT6146 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003 11 AWT6146 ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a products formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 ADVANCED PRODUCT INFORMATION - Rev 0.5 11/2003