ANADIGICS AWT6146

AWT6146
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.5
FEATURES
•
InGaP HBT Technology
•
Integrated Power Control (CMOS)
•
Quad Band Applications
•
+35 dBm GSM Output Power at 3.5 V
•
+33 dBm DCS/PCS Output Power at 3.5 V
•
55% GSM850/900 PAE
•
50% DCS/PCS PAE
•
Small Footprint 7mm x 7mm
•
Low Profile 1.3mm
•
Power Control Range >50 dB
•
GPRS Capable (class 12)
APPLICATIONS
•
GSM850/GSM900/DCS/PCS Handsets
•
Dual/Tri/Quad Band PDA
18 Pin
7mm x 7mm
Amplifier Module
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50 W. Internal DC blocks are provided at
the RF ports.
The amplifier’s power control range is typically
55 dB, with the output power set by applying an
analog voltage to VRAMP. The logical control inputs,
V CC2
DCS/PCS_IN
DCS/PCS
DCS/PCS_OUT
BS
TX_EN
VBATT
Bias and Power
Control
VCC_OUT
VREG
V RAMP
GSM850/900_IN
GSM850/900_OUT
GSM850/900
V CC2
Figure 1: Block Diagram
11/2003
AWT6146
BS
GND
1
VCC2
DCS/PCS_IN
18
17
16
DCS/PCS_OUT
2
15
GND
TX_EN
3
14
GND
VBATT
4
13
VCC_OUT
VREG
5
12
GND
VRAMP
6
11
GND
GSM_IN
7
10
GSM_OUT
9
VCC 2
GND
8
Figure 2: Pinout (X- ray Top View)
Table 1: Pin Description
PIN
1
2
NAME
DESCRIPTION
PIN
NAME
10
GSM_OUT
Band Select Logic Input
11
GND
Ground
Ground
DCS/PCS_IN DCS/PCS RF Input
DESCRIPTION
GSM850/900 RF Output
2
BS
3
TX_EN
TX Enable Logic Input
12
GND
4
VBATT
Battery Supply
Connection
13
VCC_OUT
5
VREG
Regulated Supply
Connection
14
GND
Ground
6
VRAMP
Analog Signal used to
control the output power
15
GND
Ground
7
GSM_IN
GSM850/900 RF Input
16
8
VC C 2
VCC Control Input for
GSM850/900
Pre-amplifier
17
GND
Ground
9
GND
Ground
18
VC C 2
VCC Control Input for
DCS/PCS
Pre-amplifier
Control Voltage Output
which must be connected
to VCC2, no decoupling
DCS/PCS_OUT DCS/PCS RF Output
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
AWT6146
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VBATT)
-
+7
V
RF Input Power (RFIN)
-
11
dB m
Control Voltages (VRAMP)
-0.3
1.8
V
Storage Temperature (TSTG)
- 55
150
°C
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 3: ESD Ratings
PARAMETER
METHOD
RATINGS
UNIT
ESD Threshold Voltage (RF ports)
HBM
>250
V
ESD Threshold Voltage (control inputs)
HBM
>2.5
kV
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500 W,
capacitance = 100 pF.
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
3
AWT6146
Table 4: Operating Ranges
PAR AME T E R
MIN
T YP
M AX
U N IT
Case Temperature (TC)
-20
-
85
°C
Supply Voltage (VBATT)
3.0
3.5
4.8
V
Regulated Voltage (VREG)
2.7
2.8
2.9
V
Regulated Current (IREG)
-
6
-
mA
TX_EN = HIGH
Regulated Current (IREG)
-
10
30
µA
TX_EN = LOW
Control Voltage for Maxi mum Power
(VRAMP_MAX)
-
-
1.6
V
Control Voltage for Mi ni mum Power
(VRAMP_MIN)
-
0.2
0.25
V
Power Supply Leakage Current
-
1
10
µA
VRAMP Input Capaci tance
-
3
-
pF
VRAMP Input Current
-
-
10
µA
Turn ON/OFF Ti me
-
1
2
µs
Duty Cycle
-
-
50
%
C OMME N T S
VBATT = 4.8 V, VREG = 0 V,
VRAMP = 0 V,
TX_EN = LOW,
No RF appli ed
VRAMP = 0.2 V to VRAMP_MAX
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
Table 5: Digital Inputs
4
PAR AME T E R
MIN
T YP
M AX
U N IT
Logic High Voltage (VIH)
1.2
-
VREG
V
Logic Low Voltage (VIL)
-
-
0.5
V
Logic High Current (IIH)
-
-
30
µA
Logic Low Current (IIL)
-
-
30
µA
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
AWT6146
Table 6: Electrical Characteristics for GSM850
(VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%,
ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PAR AME T E R
MIN
T YP
M AX
U N IT
Operati ng Frequency (FO)
824
-
849
MHz
0
3.0
5
dBm
34.5
35
-
dBm
Freq = 824 to 849 MHz
Degraded Output Power
-
33
-
dBm
VBATT = 3.0 V, TC = 85 °C,
VREG = 2.7 V, PIN = 0 dBm
PAE @ PMAX
-
55
-
%
Forward Isolati on 1
-
-35
-
dBm
TX_EN = LOW, PIN = 5 dBm
Forward Isolati on 2
-
-25
-
dBm
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolati on
(2FO @ DCS/PCS port)
-
-30
-
dBm
VRAMP = 0.2 V to VRAMP_MAX
-
-15
-30
-
dBm
Over all output power levels
Input Power
Output Power, PMAX
Harmoni cs
2fo
3fo
C OMME N T S
Freq = 824 to 849 MHz
VSWR = 8:1 All Phases, POUT < 34.5 dBm
Stabi li ty
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
-
-
10:1
RX Noi se Power
-
-86
-
Input VSWR
-
-
2.5:1
All load phases,
POUT < 34.5 dBm
dBm
FTX = 849 MHz,
RBW = 100 kHz,
FRX = 869 to 894 MHz,
POUT < 34.5 dBm
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
5
AWT6146
Table 7: Electrical Characteristics for GSM900
(VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%,
ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PAR AME T E R
MIN
T YP
M AX
U N IT
Operati ng Frequency (FO)
880
-
915
MHz
0
3.0
5
dBm
34.5
35
-
dBm
Freq = 880 to 915 MHz
Degraded Output Power
-
33
-
dBm
VBATT = 3.0 V, TC = 85 °C,
VREG = 2.7 V, PIN = 0 dBm
PAE @ PMAX
-
55
-
%
Forward Isolati on 1
-
-35
-
dBm
TX_EN = LOW, PIN = 5 dBm
Forward Isolati on 2
-
-25
-
dBm
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolati on
(2FO @ DCS/PCS port)
-
-30
-
dBm
VRAMP = 0.2 V to VRAMP_MAX
-
-17
-30
-
dBm
Over all output power levels
Input Power
Output Power, PMAX
Harmoni cs
2fo
3fo
C OMME N T S
Freq = 880 to 915 MHz
VSWR = 8:1 All Phases, POUT < 34.5 dBm
Stabi li ty
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
-
-
10:1
-
-81
-
All load phases,
POUT < 34.5 dBm
dBm
FTX = 915 MHz,
RBW = 100 kHz,
FRX = 925 to 935 MHz,
POUT < 34.5 dBm
dBm
FTX = 915 MHz,
RBW = 100 kHz,
FRX = 935 to 960 MHz,
POUT < 34.5 dBm
RX Noi se Power
Input VSWR
6
-
-86
-
-
-
2.5:1
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
AWT6146
Table 8: Electrical Characteristics for DCS
(VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%,
ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
PAR AME T E R
MIN
T YP
M AX
U N IT
C OMME N T S
Operati ng Frequency
1710
-
1785
MHz
Input Power
0
3.0
5
dBm
Output Power, PMAX
32
33
-
dBm
Degraded Output Power
-
31
-
dBm
VBATT = 3.0 V, TC = 85 °C,
VREG = 2.7 V, PIN = 0 dBm
PAE @ PMAX
-
50
-
%
Freq = 1710 to 1785 MHz
Forward Isolati on 1
-
-37
-
dBm
TX_EN = LOW, VRAMP = 0.2 V,
PIN = 5 dBm
Forward Isolati on 2
-
-15
-
dBm
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Harmoni cs
2fo
3fo
-
-17
-30
-
dBm
Over all output power levels
VSWR = 8:1 All Phases, POUT < 32 dBm
Stabi li ty
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
-
-
10:1
RX Noi se Power
-
-86
-
Input VSWR
-
-
2.5:1
All load phases,
POUT < 32 dBm
dBm
FTX = 1785 MHz,
RBW = 100 kHz,
FRX = 1805 to 1880 MHz,
POUT < 32 dBm
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
7
AWT6146
Table 9: Electrical Characteristics for PCS
(VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%,
ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
PAR AME T E R
MIN
T YP
M AX
U N IT
C OMME N T S
Operati ng Frequency
1850
-
1910
MHz
Input Power
0
3.0
5
dBm
Output Power, PMAX
32
33
-
dBm
Degraded Output Power
-
30.5
-
dBm
VBATT = 3.0 V, TC = 85 °C,
VREG = 2.7 V, PIN = 0 dBm
PAE @ PMAX
-
50
-
%
Freq = 1850 to 1910 MHz
Forward Isolati on 1
-
-35
-
dBm
TX_EN = LOW, VRAMP = 0.2 V,
PIN = 5 dBm
Forward Isolati on 2
-
-15
-
dBm
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Harmoni cs
2fo
3fo
-
-20
-30
-
dBm
Over all output power levels
VSWR = 8:1 All Phases, POUT < 32 dBm
Stabi li ty
Ruggedness
8
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
-
-
10:1
RX Noi se Power
-
-86
-
Input VSWR
-
-
2.5:1
All load phases,
POUT < 32 dBm
dBm
FTX = 1910 MHz,
RBW = 100 kHz,
FRX = 1930 to 1990 MHz,
POUT < 32 dBm
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
AWT6146
PACKAGE OUTLINE
Figure 3: Package Outline
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
9
AWT6146
NOTES
10
ADVANCED PRODUCT INFORMATION - Rev 0.5
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AWT6146
NOTES
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
11
AWT6146
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: [email protected]
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
12
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003