ANADIGICS AWT6223RM26P9

AWT6223R
WCDMA/GSM/GPRS/Polar EDGE
Power Amplifier Module
with Integrated Power Control
Data Sheet - Rev 2.0
features
InGaP HBT Technology
Optimized for a 50  System
Internal Reference Voltage
Integrated GSM/EDGE Power Control with Temperature Compensation
• Low Profile Surface Mount Package:
6 mm x 8 mm x 1 mm
• RoHS Compliant Package, 250 oC MSL-3
WCDMA MODE
• HSDPA Compliant
• High Efficiency:
41% @ POUT = +28.5 dBm
21% @ POUT = +16 dBm
• Low Quiescent Current: 12 mA
• Low Leakage Current in Shutdown Mode: <1 A
• Internal Voltage Regulator Eliminates the Need for
External Reference Voltage
• VEN = +2.4 V (+2.2 V min over Temp)
GMSK MODE
• +35 dBm GSM850/900 Output Power
• +33 dBm DCS/PCS Output Power
• 55 % GSM850/900 PAE
• 50 % DCS/PCS PAE
• Power Control Range > 50 dB
• EGPRS Capable (class 12)
EDGE MODE
• +29 dBm GSM850/900 Output Power
• +28.5 dBm DCS/PCS Output Power
• 27 % GSM850/900 PAE
• 30 % DCS/PCS PAE
• -63 dBc/30 kHz Typical ACPR (400 kHz)
• -77 dBc/30 kHz Typical ACPR (600 kHz)
•
•
•
•
InGaP HBT MMIC technology to provide reliability,
temperature stability, and ruggedness. This pentaband module consists of three amplifier chains; one
to support GSM/GPRS/EGPRS in cellular bands, one
to support GSM/GPRS/EGPRS in DCS/PCS bands,
and one to support WCDMA in the IMT band. In addition, the AWT6223R module includes an internal
reference voltage and integrated power control with
temperature compensation for use in GMSK and
8-PSK modes of operation. These features facilitate
fast and easy production calibration, minimize performance variation over temperature, and reduce the
number of external components required.
TM
The WCDMA PA incorporates ANADIGICS’ HELP2
technology. Through selectable bias modes, the
AWT6223R achieves optimal efficiency across
different output power levels, specifically at low
and mid-range power levels where the PA typically
operates, thereby dramatically increasing handset
talk-time and standby-time. Its built-in voltage regulator
eliminates the need for an external reference voltage
and switch components, reducing PCB area and BOM
costs. All of the RF ports for this device are internally
matched to 50 . The RF inputs GSM_IN and DCS/
PCS_IN both have shunt resistors to ground to maintain a good input VSWR as the VRAMP power control
voltage is varied. Internal DC blocks are provided at
the RF outputs.
APPLICATIONS
3G Handsets, Smartphones, Data Devices Incorporating:
• WCDMA (IMT)
• GSM850/GSM900/DCS/PCS Bands
• GMSK and 8-PSK (Open Loop Polar)
Modulations
•
CEXT2
WCDMA_IN
1
VMODE
2
VEN
3
DCS/PCS_IN
The AWT6223R WEDGE module supports dual, tri,
or quad band operation using GMSK/GPRS and
8-PSK (open loop polar) modulations, and WCDMA
operation in the IMT band. The AWT6223R module is manufactured using ANADIGICS’ advanced
11/2008
21
VCC_WCDMA
20
WCDMA_OUT
19
GND
4
18
DCS/PCS_OUT
BS
5
17
GND
TX_EN
6
16
GND
VBATT
7
CEXT1
PRODUCT DESCRIPTION
22
VRAMP
GSM850/900_IN
Voltage Regulator
and Bias Control
CMOS Bias/Power
Controller
8
9
10
11
15
CEXT3
14
GND
13
GND
12
GSM850/900_OUT
VCC_GSM
Figure 1: Block Diagram
AWT6223R
CEXT2
21
VCC_WCDMA
2
20
WCDMA_OUT
VEN
3
19
GND
DCS/PCS_IN
4
18
DCS/PCS_OUT
BS
5
17
GND
TX_EN
6
16
GND
VBATT
7
15
CEXT3
CEXT1
8
14
GND
VRAMP
9
13
GND
GSM850/900_IN
10
12
GSM850/900_OUT
WCDMA_IN
1
VMODE
22
GND
11
VCC_GSM
Figure 2: Pinout (X - ray Top View)
Table 1: Pin Description
PIN
NaMe
1
WCDMA_IN
2
VMODE
3
PIN
NaMe
DesCrIPtION
WCDMA RF Input
12
WCDMA Mode Control
Voltage
13
GND
Ground
VEN
WCDMA Shutdown
14
GND
Ground
4
DCS/PCS_IN
DCS/PCS RF Input
15
C EXT3
Bypass for Power Control
Regulator
5
BS
Band Select Logic Input
16
GND
Ground
6
TX_EN
TX Enable Logic Input
17
GND
Ground
7
VBATT
Battery Supply
18
DCS/PCS_OUT
8
CEXT1
Bypass for Internal
Voltage Regulator
19
GND
9
VRAMP
Analog signal used to
control the GSM output
power
20
WCDMA_OUT
GSM850/900_IN GSM850/900 RF Input
21
VCC_WCDMA
WCDMA Supply Voltage
22
C EXT2
Bypass for WCDMA VCC1
10
11
2
DesCrIPtION
VCC_GSM
VCC test point for GSM
secton. Do not connect.
Do not ground.
GSM850/900_OUT GSM850/900 RF Output
Data Sheet - Rev 2.0
11/2008
DCS/PCS RF Output
Ground
WCDMA RF Output
AWT6223R
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
ParaMeter
MIN
MaX
Supply Voltage (VBATT)
-
+6
V
Supply Voltage (VCC_WCDMA)
-
+5
V
RF Input Power (RFIN)
-
10
dBm
-0.3
1.8
V
0
3.5
V
-55
150
°C
GSM/EDGE Output Control Voltage (VRAMP)
WCDMA Control Voltages (VMODE, VEN)
Storage Temperature (TSTG)
uNIts
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
CEXT2
>+2500 V <-2500 V
WCDMA_IN
>+1500 V <-1500 V
VMODE
>+1500 V <-1500 V
22
1
VEN
>+1500 V <-1500 V
DCS/PCS_IN
>+2500 V <-2500 V
BS
>+2500 V <-2500 V
TX_EN
>+2500 V <-2500 V
VBATT
>+2500 V <-2500 V
CEXT1
>+2500 V <-2500 V
21
VCC_WCDMA
>+1300 V <-1300 V
WCDMA_OUT
>+1500 V <-1500 V
2
20
3
19
GND
18
DCS/PCS_OUT
>+2500 V <-2500 V
17
GND
6
16
GND
7
15
CEXT3
>+2500 V <-2500 V
4
5
GND
8
14
GND
VRAMP
>+2500 V <-2500 V
9
13
GND
GSM850/900_IN
>+2500 V <-2500 V
10
12
GSM850/900_OUT
>+2500 V <-2500 V
11
VCC_GSM
>+2500 V <-2500 V
Figure 3: ESD Pin Rating
Electrostatic Discharge Sensitivity
The AWT6223R part was tested to determine the
ESD sensitivity of each package pin with respect
to Ground. Non-ground pins are stressed with 1
positive pulse or 1 negative pulse with respect to
the Ground using the Human Body Model apparatus and waveform outlined in JESD22-A114C.01.
Determination of pass or fail is made according to
whether the part passes key RF tests against the
datasheet limits after stress. Results of the test are
presented in Figure 3:
Rating for WCDMA_IN, VMODE, VEN, and
WCDMA_OUT is +1500V and -1500V;
• Rating for VCC_WCDMA is +1300V and -1300V;
• Rating for DCS/PCS_IN, BS, Tx_EN, VBATT,
CEXT1, VRAMP, GSM_IN, VCC_GSM, GSM_OUT,
CEXT3 and DCS/PCS_OUT is +2500V and
-2500V
It is very important to take all necessary precautions,
listed in Application Notes “ESD precautions for
ANADIGICS GaAs MMIC,” to avoid ESD damage to
•
Data Sheet - Rev 2.0
11/2008
3
AWT6223R
Table 3: GSM/EDGE Operating Conditions
ParaMeter
MIN
tYP
MaX
uNIts
Case temperature (TC)
-20
-
85
°C
Supply voltage (VBATT)
3.0
3.5
4.8
V
-
1
10
A
0.2
-
1.6
V
Turn On Time (TON)
-
-
1
s
Turn Off Time (TOFF)
-
-
1
s
Rise Time (TRISE)
-
-
1
s
Fall Time (TFALL)
-
-
1
s
VRAMP Input Capacitance
-
3
-
pF
VRAMP Input Current
-
-
10
Duty Cycle
-
-
50
Total Power Supply Leakage
Current
Control Voltage Range
COMMeNts
VBATT = VCC_WCDMA = 4.8 V, VEN = 0 V,
VMODE = 0 V, BS = 0 V, VRAMP = 0 V,
TX_EN = LOW, No RF applied
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
POUT = -10 dBm Y PMAX (within 0.2 dB)
POUT = PMAX Y -10 dBm (within 0.2 dB)
A
%
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
1. Do not apply a DC voltage to the GSM_IN or DCS/PCS_IN RF inputs.
Table 4: GSM/EDGE Digital Inputs
ParaMeter
sYMBOL
MIN
tYP
MaX
uNIts
Logic High Voltage
VIH
1.2
-
3.0
V
Logic Low Voltage
VIL
-
-
0.5
V
Logic High Current
|IIH|
-
-
30
A
Logic Low Current
|IIL|
-
-
30
A
Table 5: GSM/EDGE Logic Control
OPeratIONaL MODe
Bs
tX_eN
GSM850/900
LOW
HIGH
DCS/PCS
HIGH
HIGH
-
LOW
PA DISABLED
Notes:
1. VBATT must be applied before taking BS and/or TX_EN High.
4
Data Sheet - Rev 2.0
11/2008
AWT6223R
Table 6: Electrical Characteristics for GSM850 GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VEN = LOW)
ParaMeter
MIN
tYP
MaX
uNIt
Operating Frequency (Fo)
824
-
849
MHz
0
3
5
dBm
Output Power, PMAX
34.5
35
-
dBm
Freq = 824 to 849 MHz
Degraded Output Power
32.0
32.5
-
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 0 dBm
48
52
-
%
Forward Isolation 1
-
-42
-30
dBm
TX_EN = LOW, PIN = 5 dBm
Forward Isolation 2
-
-25
-20
dBm
TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm
Cross Isolation
2Fo @ DCS/PCS port
3Fo @ DCS/PCS port
-
-36
-25
-20
-20
dBm
VRAMP =0.2V to VRAMP_MAX
Second Harmonic
-
-20
-10
dBm
Over all output power levels
Third Harmonic
-
-30
-10
dBm
Over all output power levels
n x Fo (n > 4),
Fo  12.75 GHz
-
-30
-10
dBm
Over all output power levels
Input Power
PAE @ PMAX
COMMeNts
Freq = 824 to 849 MHz
VSWR = 8:1 All Phases , POUT < 34.5 dBm
Stability
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
RX Noise Power
-
-86
-83
dBm
Input Return Loss
-
1.5:1
2.5:1
VSWR
Data Sheet - Rev 2.0
11/2008
POUT < 34.5 dBm
FTX = 849 MHz, RBW = 100 kHz
FRX = 869 to 894 MHz, POUT < 34.5 dBm
Over all output power levels
5
AWT6223R
Table 7: Electrical Characteristics for GSM900 GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VEN = LOW)
ParaMeter
MIN
tYP
MaX
uNIt
880
-
915
MHz
0
3
5
dBm
Output Power, PMAX
34.5
35
-
dBm
Freq = 880 to 915 MHz
Degraded Output Power
32.0
32.5
-
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 0 dBm
50
55
-
%
Forward Isolation 1
-
-40
-30
dBm
TX_EN = LOW, PIN = 5 dBm
Forward Isolation 2
-
-25
-20
dBm
TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm
Cross Isolation
2Fo @ DCS/PCS port
3Fo @ DCS/PCS port
-
-34
-22
-20
-17
dBm
VRAMP =0.2V to VRAMP_MAX
Second Harmonic
-
-25
-10
dBm
Over all output power levels
Third Harmonic
-
-27
-10
dBm
Over all output power levels
n x Fo (n > 4),
Fo  12.75 GHz
-
-30
-10
dBm
Over all output power levels
Operating Frequency
( Fo )
Input Power
PAE @ PMAX
COMMeNts
Freq = 880 to 915 MHz
VSWR = 8:1 All Phases , POUT < 34.5 dBm
Stability
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
-
-83
-77
dBm
FTX = 915 MHz, RBW = 100 kHz
FRX = 925 to 935 MHz, POUT < 34.5 dBm
-
-86
-83
dBm
FTX = 915 MHz, RBW = 100 kHz
FRX = 935 to 960 MHz, POUT < 34.5 dBm
-
1.5:1
2.5:1
VSWR
RX Noise Power
Input Return Loss
6
POUT < 34.5 dBm
Data Sheet - Rev 2.0
11/2008
Over all output power levels
AWT6223R
Table 8: Electrical Characteristics for GSM850 8PSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VEN = LOW)
ParaMeter
MIN
tYP
MaX
uNIt
824
880
-
849
915
MHz
Input Power
0
3
5
dBm
PAE
20
27
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-39
-63
-74
-77
-34
-58
-64
-68
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
POUT = +29 dBm
EVM
-
1
5
%
All Conditions under Polar operation
POUT = +29 dBm
Operating Frequency
( FIN )
Data Sheet - Rev 2.0
11/2008
COMMeNts
FIN = 824 to 849 MHz
POUT set = +29 dBm
7
AWT6223R
Table 9: Electrical Characteristics for DCS GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VEN = LOW)
ParaMeter
MIN
tYP
MaX
uNIt
Operating Frequency
1710
-
1785
MHz
Input Power
0
3.0
5
dBm
Output Power, PMAX
32
33
-
dBm
29.5
30.5
-
45
50
Forward Isolation 1
-
Forward Isolation 2
COMMeNts
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 0 dBm
-
%
Freq = 1710 to 1910 MHz
-40
-33
dBm
TX_EN = LOW, PIN = 5dBm
-
-24
-20
dBm
TX_EN =HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Second Harmonic
-
-18
-10
dBm
Over all output power levels
Third Harmonic
-
-24
-10
dBm
Over all output power levels
n x Fo (n > 4),
Fo  12.75 GHz
-
-30
-10
dBm
Over all output power levels
Degraded Output Power
PAE @ PMAX
VSWR = 8:1 All Phases , POUT < 32 dBm
Stability
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
RX Noise Power
-
-86
-80
dBm
Input Return Loss
-
1.5:1
2.5:1
VSWR
8
Data Sheet - Rev 2.0
11/2008
POUT < 32 dBm
FTX = 1785 MHz, RBW = 100 kHz,
FRX =1805 to 1880 MHz, POUT < 32 dBm
Over all output power levels
AWT6223R
Table 10: Electrical Characteristics for PCS GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VEN = LOW)
ParaMeter
MIN
tYP
MaX
uNIt
Operating Frequency
1850
-
1910
MHz
Input Power
0
3.0
5
dBm
Output Power, PMAX
32
33
-
dBm
29.5
30.5
-
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 0 dBm
45
50
-
%
Freq = 1710 to 1910 MHz
Forward Isolation 1
-
-37
-33
dBm
TX_EN = LOW, PIN = 5dBm
Forward Isolation 2
-
-22
-18
dBm
TX_EN =HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Second Harmonic
-
-28
-10
dBm
Over all output power levels
Third Harmonic
-
-24
-10
dBm
Over all output power levels
n x Fo (n > 4),
Fo  12.75 GHz
-
-30
-10
dBm
Over all output power levels
Degraded Output Power
PAE @ PMAX
COMMeNts
VSWR = 8:1 All Phases , POUT < 32 dBm
Stability
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
RX Noise Power
-
-86
-80
dBm
Input Return Loss
-
1.5:1
2.5:1
VSWR
Data Sheet - Rev 2.0
11/2008
POUT < 32 dBm
FTX = 1910 MHz, RBW = 100 kHz,
FRX =1930 to 1990 MHz, POUT < 32 dBm
Over all output power levels
9
AWT6223R
Table 11: Electrical Characteristics for DCS 8PSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VEN = LOW)
ParaMeter
MIN
tYP
MaX
uNIt
1710
1850
-
1785
1910
MHz
Input Power
0
3
5
dBm
PAE
25
30
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-38
-64
-77
-77
-34
-58
-64
-68
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
POUT = +28.5 dBm
EVM
-
1
5
%
All Conditions under Polar operation
POUT = +28.5 dBm
Operating Frequency
10
( FIN )
Data Sheet - Rev 2.0
11/2008
COMMeNts
FIN = 1710 to 1785 MHz
POUT set = +28.5 dBm
AWT6223R
Table 12: WCDMA Operating Conditions
ParaMeter
MIN
tYP
Case temperature (TC)
-20
-
85
°C
Supply Voltage (VCC)
+3.2
+3.4
+4.2
V
POUT < +28.5 dBm
WCDMA Enable Voltage (VEN)
+2.2
0
+2.4
-
+3.1
+0.5
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE)
+2.2
0
+2.4
-
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
+28.0 (1)
+27.0 (1)
+26.0 (1)
+25.5 (1)
+28.5
+27.5
+26.5
+26.0
-
dBm
RF Output Power (POUT)
3GPP
HSDPA Case A
HSDPA Case B
HSDPA Case C
MaX uNIts
COMMeNts
1/15 < c/d < 12/15
13/15 < c/d < 15/8
15/7 < c/d < 15/0
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) WCDMA operation at VCC = +3.2 V, Pout is derated by 0.5 dB.
(2) Do not apply a DC voltage to the WCDMA_IN RF input.
Table 13: WCDMA Bias Control
POut
LeveLs
LOGIC
veN
vMODe
WCDMA - low power
<+16 dBm
Low
+2.4 V
+2.4 V
WCDMA - high power
>+16 dBm
High
+2.4 V
0V
-
Shutdown
0V
0V
aPPLICatION
Shutdown
Notes:
1. For WCDMA operation set TX_EN = LOW.
Data Sheet - Rev 2.0
11/2008
11
AWT6223R
Table 14: Electrical Characteristics for WCDMA
(Unless Otherwise Specified: TC = 25 °C, VBATT = +3.4 V, TX_EN = LOW, 50 Ω system, VEN = 2.4 V)
ParaMeter
MIN
tYP
MaX
uNIt
Operating Frequency
1920
-
1980
MHz
Gain
24.5
13.0
26.5
15.0
28.5
17.0
dB
ACLR1 at 5 MHz offset (1)
-
-40
-43
-38
-38
dBc
POUT = +28.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
ACLR2 at 10 MHz offset
-
-56
-52
-48
-48
dBc
POUT = +28.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
37
18
41
21
-
%
POUT = +28.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
Quiescent Current (Icq)
-
12
20
mA
VMODE = +2.4 V
Enable Current
-
0.2
1
mA
through VEN pin
Battery Current
-
3
5
mA
through VBATT pin, VMODE = +2.4 V
Mode Control Current
-
0.3
1
mA
through VMODE pin, VMODE = +2.4 V
Noise in Receive Band
-
-138
-135
Harmonics
2fo
3fo, 4fo
-
-43
-50
-35
-35
dBc
Input Impedance
-
-
2:1
VSWR
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
POUT = +28.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
dBm/Hz 2110 MHz to 2170 MHz
-
-
-70
dBc
10:1
-
-
VSWR
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
12
COMMeNts
Data Sheet - Rev 2.0
11/2008
POUT < +28.5 dBm
POUT < +28.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Applies over full operating range
AWT6223R
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists
the recommended modes of operation for various
applications.
Shutdown Mode
The WCDMA power amplifier may be placed in a
shutdown mode by applying logic low levels (see
Operating Ranges table) to both the VEN and VMODE
voltages.
Two operating modes are recommended to optimize
current consumption. High Bias operating mode is for
POUT levels > 16 dBm. At or below +16 dBm, the PA
should be “Mode Switched” to Low Bias Mode.
Bias Modes
The WCDMA power amplifier may be placed in either a
Low Bias mode or a High Bias mode by applying the
BATTERY
VOLTAGE
4.7uF ++
10nF++
22pF**
SUPPLY VOLTAGE FROM
DC-DC CONVERTER***
22
VBATT
1
IMT RF INPUT
2
WCDMA BIAS MODE
27pF
WCDMA ENABLE
++
3
27pF ++
DCS/PCS RF INPUT
5
BAND SELECT
27pF ++
TX ENABLE
BATTERY
VOLTAGE
27pF ++
4.7uF ++
2.7pF **
22nF
DAC OUTPUT
GSM850/900 RF INPUT
4
10K
*
6
7
8
**
27pF*
9
10
WCDMA_IN
V CC_WCDMA
WCDMA_OUT
VMODE
VEN
GND
DCS/PCS_PIN
BS
TX_EN
DCS/PCS_OUT
aWt6223r
VBATT
GND
GND
VCC_OUT
CEXT
GND
VRA MP
GND
GSM850/900_IN
GSM850/900_OUT
21
20
19
18
10nF ++
22pF**
WCDMA RF OUTPUT
DCS/PCS RF OUTPUT
17
16
15
14
1nF**
13
12
GSM850/900 RF OUTPUT
VCC2_GSM
11
*
Filtering may be required to filter noise from baseband.
** This component should be placed as close to the device pin as possible.
*** If the final design uses a DC-DC Converter, otherwise connect Pin 21 directly to V BATT Pin 22.
++ These components are recommended as good design practice for improving noise rejection
characteristics. The values specified are not critical as they may not be required in the final
application.
Figure 4: Application Circuit
Data Sheet - Rev 2.0
11/2008
13
AWT6223R
PACKAGE OUTLINE
Figure 5: Package Outline - 22 Pin 6 mm x 8 mm x 1 mm Surface Mount Package
Figure 6: Branding Specification
14
Data Sheet - Rev 2.0
11/2008
AWT6223R
COMPONENT PACKAGING
8.00±.10
[.314±.004]
4.00±.10
[.157±.004]
Ø1.50±.10
[Ø.059±.004]
2.00±.10
[.079±.004]
1.75±.10
[.069±.004]
6°MAX
7.50±.10
[.295±.004]
16.00+.30/-.10
[.630+.012/-.004]
8.36±.10
[.329±.004]
PIN#1 ORIENTATION
t
Ø1.50±.25
[Ø.059±.010]
Ao
6.35±.10
[.250±.004]
1.78±.10
[.070±.004]
Bo
Ko
.305±.02
[.0120±.0007]
8°MAX
NOTES:
1. MATERIAL: 3000 (CARBON FILLED POLYCARBONATE)
100% RECYCLABLE.
Figure 7: Tape & Reel Packaging
Table 14: Tape & Reel Dimensions
PaCKaGe tYPe
taPe WIDtH
POCKet PItCH
reeL CaPaCItY
MaX reeL DIa
6 mm x 8 mm x 1 mm
16 mm
8 mm
2500
13"
Data Sheet - Rev 2.0
11/2008
15
AWT6223R
ORDERING INFORMATION
OrDer NuMBer
teMPerature
raNGe
PaCKaGe
DesCrIPtION
AWT6223RM26P8
-20 oC to +85 oC
RoHS Compliant 24 Pin
6 mm x 8 mm x 1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
AWT6223RM26P9
-20 oC to +85 oC
RoHS Compliant 24 Pin
6 mm x 8 mm x 1 mm Tape and Reel, Partial Reel
Surface Mount Module
COMPONeNt PaCKaGING
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: [email protected]
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
16
Data Sheet - Rev 2.0
11/2008