AWT6155 Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control features • • • • • • • • Data Sheet - Rev 2.0 Internal Reference Voltage Integrated Power Control InGaP HBT Technology ESD Protection on All Pins (2.5 kV) Low profile 1.0 mm Small Package Outline 5 mm x 5 mm EGPRS Capable (class 12) RoHS Compliant Package, 250 oC MSL-3 AW T 615 GMSK MODE • +34.8 dBm GSM850/900 Output Power • +33 dBm DCS/PCS Output Power • 55 % GSM 900 PAE • 51 % DCS/PCS PAE • Power control range > 50 dB EDGE MODE • +29 dBm GSM850/900 Output Power • +28.5 dBm DCS/PCS Output Power • 28% GSM850/900 PAE • 28% DCS/PCS PAE • -64 dBc Typical ACPR (400 kHz) • -74 dBc Typical ACPR (600 kHz) 5R M37 Package 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module APPLICATIONS • Dual/Tri/Quad Band Handsets, PDAs, and Data Devices PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for excellent EDGE efficiency, power, and linearity in a Polar loop environment while maintaining high efficiency in the GSM/GPRS mode. The amplifier’s power control range is typically 55 dB, with the output power set by applying an analog voltage to V RAMP. All of the RF ports for this device are internally matched to 50 . The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. DCS/PCS_IN DCS/PCS DCS/PCS_OUT BS TX_EN VBATT Bias/Power Control VRAMP GSM850/900_OUT GSM850/900_IN GSM850/900 Figure 1: Block Diagram 02/2009 AWT6155 DCS/PCS_IN 1 BS 2 TX_EN 3 VBATT 4 VRAMP 5 CEXT 6 GND 7 GSM850/900_IN 8 11 DCS/PCS_OUT 10 N/C 9 GSM850/900_OUT GND Figure 2: Pinout (X - ray Top View) Table 1: Pin Description PIN 1 2 NaMe DCS/PCS_IN 2 BS 3 TX_EN 4 DesCrIPtION RF input to the DCS/PCS PA. There is a 175 shunt resistor before the DC blocking capacitor to set the input impedance. PIN NaMe 7 GND Band Select Logic Input 8 GSM850/900_IN TX Enable Logic Input 9 VBATT Battery Supply Connection 10 N/C 5 VRAMP Analog Signal used to control output power 11 DCS/PCS_OUT 6 CEXT Bypass (VREG) DesCrIPtION Ground RF Input to GSM850/900 PA. There is a 185 shunt resistor before the DC blocking capacitor to set the input impedance. GSM850/900_OUT GSM900 RF Output Data Sheet - Rev 2.0 02/2009 No Connection Do not connect to ground DCS RF Output AWT6155 ELECTRICAL CHARACTERISTICS Table 2: Absolute Maximum Ratings ParaMeter MIN MaX uNIts Supply Voltage (VBATT) - +5.5 V RF Input Power (RFIN) - 11 dBm Control Voltage (VRAMP) -0.3 1.8 V Storage Temperature (TSTG) -55 150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. DCS/PCS_IN >+2500 V <-2500 V 1 BS >+2500 V <-2500 V TX_EN >+2500 V <-2500 V 2 VBATT >+2500 V <-2500 V VRAMP >+2500 V <-2500 V CEXT >+2500 V <-2500 V 11 DCS/PCS_OUT >+2500 V <-2500 V 10 N/C 3 4 GND 5 6 GND 7 GSM850/900_IN >+2500 V <-2500 V 8 9 GSM850/900_OUT >+2500 V <-2500 V Figure 3: ESD Pin Rating ELECTROSTATIC DISCHARGE SENSITIVITY The AWT6155 part was tested to determine the ESD sensitivity of each package pin with respect to ground. All the package pins were subjected to an ESD pulse event using the Human Body Model outlined in JESD22-A114C.01 in either polarity with respect to ground. The pre and post test I-V characteristics of each pin are recorded. The ratings on each pin require that it sustain the ESD event and show no degradation. Data Sheet - Rev 2.0 02/2009 3 AWT6155 Table 3: Operating Conditions ParaMeter MIN tYP MaX uNIts Case temperature (TC) -20 - +85 °C Supply voltage (VBATT) 3.0 3.5 4.8 V - 1 10 A 0.2 - 1.6 V Turn on Time (TON) - - 1 s Turn Off Time (TOFF) - - 1 s Rise Time (TRISE) - - 1 s Fall Time (TFALL) - - 1 s VRAMP Input Capacitance - 3 - pF VRAMP Input Current - - 10 Duty Cycle - - 50 Power supply leakage current Control Voltage Range COMMeNts VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW No RF applied VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm VRAMP = 0.2 V, TX_EN = HIGH Y LOW PIN = 5 dBm POUT = -10 dBm Y PMAX (within 0.2 dB) POUT = PMAX Y -10 dBm (within 0.2 dB) A % The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Table 4: Digital Inputs ParaMeter sYMBOL MIN tYP MaX uNIts Logic High Voltage VIH 1.2 - 3.0 V Logic Low Voltage VIL - - 0.5 V Logic High Current |IIH| - - 30 A Logic Low Current |IIL| - - 30 A Table 5: Logic Control Table OPeratIONaL MODe Bs tX_eN GSM850/900 LOW HIGH DCS/PCS HIGH HIGH - LOW PA DISABLED 4 Data Sheet - Rev 2.0 02/2009 AWT6155 Table 6: Electrical Characteristics for GSM850 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH MIN tYP MaX uNIt 824 - 849 MHz 0 3 5 dBm 34.0 34.8 - dBm Freq = 824 to 849 MHz Degraded Output Power (POUT) 32 32.8 - dBm VBATT = 3.0 V, TC = +85 °C PIN = 0 dBm PAE @ PMAX 48 53 - % Forward Isolation 1 - -49 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -29 -15 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Cross Isolation (2Fo @ DCS/PCS port) - -30 -20 dBm POUT < 34.0 dBm Cross Isolation (3Fo @ DCS/PCS port) - -20 -12 dBm POUT < 34.0 dBm Second Harmonic - -23 -10 dBm POUT < 34.0 dBm Third Harmonic - -18 -10 dBm POUT < 34.0 dBm n * fo (n > 4), Fo 12.75 GHz - -30 -10 dBm POUT < 34.0 dBm ParaMeter Operating Frequency ( FIN ) Input Power (PIN) Output Power (PMAX) COMMeNts Freq = 824 to 849 MHz VSWR = 6:1 All Phases , POUT < 34.0 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -88 -82 dBm Input Return Loss - 1.5:1 2.5:1 VSWR Data Sheet - Rev 2.0 02/2009 POUT < 34.0 dBm FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.0 dBm POUT < 34.0 dBm 5 AWT6155 Table 7: Electrical Characteristics for GSM850 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 824 - 849 MHz Input Power 0 3 5 dBm PAE 20 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -37 -62 -74 -78 -34 -58 -64 -66 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency 6 ( FIN ) Data Sheet - Rev 2.0 02/2009 COMMeNts FIN = 824 to 849 MHz POUT set = +29 dBm AWT6155 Table 8: Electrical Characteristics for GSM900 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 880 - 915 MHz 0 3 5 dBm 34.0 34.8 - dBm Freq = 880 to 915 MHz Degraded Output Power (POUT) 32 32.8 - dBm VBATT = 3.0 V, TC = +85 °C PIN = 0 dBm PAE @ PMAX 50 56 - % Forward Isolation 1 - -46 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -28 -15 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Cross Isolation (2Fo @ DCS/PCS port) - -24 -18 dBm POUT < 34.0 dBm Cross Isolation (3Fo @ DCS/PCS port) - -21 -12 dBm POUT < 34.0 dBm Second Harmonic - -22 -10 dBm POUT < 34.0 dBm Third Harmonic - -18 -10 dBm POUT < 34.0 dBm n * fo (n > 4), Fo 12.75 GHz - -29 -8 dBm POUT < 34.0 dBm Operating Frequency ( FIN ) Input Power (PIN) Output Power (PMAX) COMMeNts Freq = 880 to 915 MHz VSWR = 6:1 All Phases , POUT < 34.0 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles - -87 -76 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.0 dBm - -87 -82 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.0 dBm - 1.5:1 2.5:1 VSWR RX Noise Power Input Return Loss POUT < 34.0 dBm Data Sheet - Rev 2.0 02/2009 POUT < 34.0 dBm 7 AWT6155 Table 9: Electrical Characteristics for GSM900 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = LOW, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 880 - 915 MHz Input Power 0 3 5 dBm PAE 20 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -65 -74 -78 -34 -58 -64 -66 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency 8 ( FIN ) Data Sheet - Rev 2.0 02/2009 COMMeNts FIN = 880 to 915 MHz POUT set = +29 dBm AWT6155 Table 10: Electrical Characteristics for DCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width = 1154 µs Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH MIN tYP MaX uNIt 1710 - 1785 MHz 0 3 5 dBm Output Power (PMAX) 32.0 32.9 - dBm Freq = 1710 to1785 MHz Degraded Output Power (POUT) 30.0 31.0 - dBm VBATT = 3.0 V, TC = +85 °C PIN = 0 dBm 45 51 - % Freq = 1710 to1785 MHz Forward Isolation 1 - -46 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -27 -15 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Second Harmonic - -19 -10 dBm POUT < 32.0 dBm Third Harmonic - -30 -15 dBm POUT < 32.0 dBm n * fo (n > 4), Fo 12.75 GHz - -34 -8 dBm POUT < 32.0 dBm ParaMeter Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMeNts VSWR = 8:1 All Phases , POUT < 32.0 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -89 -82 dBm Input Return Loss - 1.5:1 2.5:1 VSWR Data Sheet - Rev 2.0 02/2009 POUT < 32.0 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to1880 MHz, POUT < 32.0 dBm POUT < 32.0 dBm 9 AWT6155 Table 11: Electrical Characteristics for DCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 1710 - 1785 MHz Input Power 0 3 5 dBm PAE 22 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -37 -64 -74 -78 -34 -58 -64 -66 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm Operating Frequency 10 ( FIN ) Data Sheet - Rev 2.0 02/2009 COMMeNts FIN = 1710 to 1785 MHz POUT set = +28.5 dBm AWT6155 Table 12: Electrical Characteristics for PCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width = 1154 µs Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH COMMeNts ParaMeter MIN tYP MaX uNIt Operating Frequency (FIN) 1850 - 1910 MHz 0 3 5 dBm Output Power (PMAX) 32.0 32.9 - dBm Freq = 1850 to1910 MHz Degraded Output Power (POUT) 30.0 31.0 - dBm VBATT = 3.0 V, TC = +85 °C PIN = 0 dBm 45 51 - % Freq = 1850 to1910 MHz Forward Isolation 1 - -45 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -27 -15 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Second Harmonic - -26 -10 dBm POUT < 32.0 dBm Third Harmonic - -34 -15 dBm POUT < 32.0 dBm n * fo (n > 4), Fo 12.75 GHz - -33 -8 dBm POUT < 32.0 dBm Input Power (PIN) PAE @ PMAX VSWR = 8:1 All Phases , POUT < 32.0 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -90 -82 dBm Input Return Loss - 1.5:1 2.5:1 VSWR Data Sheet - Rev 2.0 02/2009 POUT < 32.0 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to1990 MHz, POUT < 32.0 dBm POUT < 32.0 dBm 11 AWT6155 Table 13: Electrical Characteristics for PCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt Operating Frequency (FIN) 1850 - 1910 MHz Input Power 0 3 5 dBm PAE 22 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -37 -64 -74 -78 -34 -58 -64 -66 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm 12 Data Sheet - Rev 2.0 02/2009 COMMeNts FIN = 1850 to 1910 MHz POUT set = +28.5 dBm AWT6155 APPLICATION INFORMATION DCS/PCS RF INPUT 1 2 BSEL 33pF 3) TXEN VBAT RAMP 33pF 3) 47µF 3) 12pF 2) 2.2k 1) 2.7pF 2) 68pF 1) 22nF 2) GSM RF INPUT 3 4 5 6 7 8 DCS/PCS_IN DCS/PCS_OUT 11 Matching 4) BS TX_EN V BATT V RAMP aWt6155 10 N/C C EXT GND GSM_OUT GSM_IN 9 asM or FeM Matching 4) 1) Component values depends on baseband chipset used. 2) This component should be placed as close to the device pin as possible. 3) These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. 4) Actual matching component values depend on PCB layout and ASM/FEM used. Figure 4: Recommended Application Circuit Figure 5: Branding Specification Diagram Data Sheet - Rev 2.0 02/2009 13 AWT6155 Package Outline Figure 6: M37 Package Outline (P800-2414) - 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module 14 Data Sheet - Rev 2.0 02/2009 AWT6155 Figure 7: Recommended PCB Layout Information Data Sheet - Rev 2.0 02/2009 15 AWT6155 ORDERING INFORMATION OrDer NuMBer teMPerature raNGe PaCKaGe DesCrIPtION COMPONeNt PaCKaGING AWT6155RM37P8 -20 °C to +85°C RoHS-compliant 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module Tape and Reel, 2500 pieces per reel AWT6155RM37P9 -20 °C to +85°C RoHS-compliant 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module Partial Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 16 Data Sheet - Rev 2.0 02/2009