ANADIGICS AWT6155RM37P9

AWT6155
Quad-band GSM/GPRS/EDGE
Power Amplifier Module
with Integrated Power Control
features
•
•
•
•
•
•
•
•
Data Sheet - Rev 2.0
Internal Reference Voltage
Integrated Power Control
InGaP HBT Technology
ESD Protection on All Pins (2.5 kV)
Low profile 1.0 mm
Small Package Outline 5 mm x 5 mm
EGPRS Capable (class 12)
RoHS Compliant Package, 250 oC MSL-3
AW
T
615
GMSK MODE
• +34.8 dBm GSM850/900 Output Power
• +33 dBm DCS/PCS Output Power
• 55 % GSM 900 PAE
• 51 % DCS/PCS PAE
• Power control range > 50 dB
EDGE MODE
• +29 dBm GSM850/900 Output Power
• +28.5 dBm DCS/PCS Output Power
• 28% GSM850/900 PAE
• 28% DCS/PCS PAE
• -64 dBc Typical ACPR (400 kHz)
• -74 dBc Typical ACPR (600 kHz)
5R
M37 Package
11 Pin 5 mm x 5 mm x 1.0 mm
Surface Mount Module
APPLICATIONS
•
Dual/Tri/Quad Band Handsets, PDAs, and
Data Devices
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri
and quad band applications for GMSK and 8-PSK
modulation schemes using a polar architecture.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
Each amplification chain is optimized for excellent
EDGE efficiency, power, and linearity in a Polar loop
environment while maintaining high efficiency in the
GSM/GPRS mode.
The amplifier’s power control range is typically
55 dB, with the output power set by applying
an analog voltage to V RAMP. All of the RF ports
for this device are internally matched to 50 .
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the number
of external components required to complete a power
control function.
DCS/PCS_IN
DCS/PCS
DCS/PCS_OUT
BS
TX_EN
VBATT
Bias/Power
Control
VRAMP
GSM850/900_OUT
GSM850/900_IN
GSM850/900
Figure 1: Block Diagram
02/2009
AWT6155
DCS/PCS_IN
1
BS
2
TX_EN
3
VBATT
4
VRAMP
5
CEXT
6
GND
7
GSM850/900_IN
8
11
DCS/PCS_OUT
10
N/C
9
GSM850/900_OUT
GND
Figure 2: Pinout (X - ray Top View)
Table 1: Pin Description
PIN
1
2
NaMe
DCS/PCS_IN
2
BS
3
TX_EN
4
DesCrIPtION
RF input to the
DCS/PCS PA. There is a
175  shunt resistor
before the DC blocking
capacitor to set the input
impedance.
PIN
NaMe
7
GND
Band Select Logic Input
8
GSM850/900_IN
TX Enable Logic Input
9
VBATT
Battery Supply
Connection
10
N/C
5
VRAMP
Analog Signal used to
control output power
11
DCS/PCS_OUT
6
CEXT
Bypass (VREG)
DesCrIPtION
Ground
RF Input to GSM850/900
PA. There is a 185  shunt
resistor before the DC
blocking capacitor to set the
input impedance.
GSM850/900_OUT GSM900 RF Output
Data Sheet - Rev 2.0
02/2009
No Connection
Do not connect to ground
DCS RF Output
AWT6155
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
ParaMeter
MIN
MaX
uNIts
Supply Voltage (VBATT)
-
+5.5
V
RF Input Power (RFIN)
-
11
dBm
Control Voltage (VRAMP)
-0.3
1.8
V
Storage Temperature (TSTG)
-55
150
°C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these
conditions. Exposure to absolute ratings for extended periods
of time may adversely affect reliability.
DCS/PCS_IN
>+2500 V <-2500 V
1
BS
>+2500 V <-2500 V
TX_EN
>+2500 V <-2500 V
2
VBATT
>+2500 V <-2500 V
VRAMP
>+2500 V <-2500 V
CEXT
>+2500 V <-2500 V
11
DCS/PCS_OUT
>+2500 V <-2500 V
10
N/C
3
4
GND
5
6
GND
7
GSM850/900_IN
>+2500 V <-2500 V
8
9
GSM850/900_OUT
>+2500 V <-2500 V
Figure 3: ESD Pin Rating
ELECTROSTATIC DISCHARGE SENSITIVITY
The AWT6155 part was tested to determine the ESD
sensitivity of each package pin with respect to ground.
All the package pins were subjected to an ESD
pulse event using the Human Body Model outlined
in JESD22-A114C.01 in either polarity with respect
to ground. The pre and post test I-V characteristics
of each pin are recorded. The ratings on each pin
require that it sustain the ESD event and show no
degradation.
Data Sheet - Rev 2.0
02/2009
3
AWT6155
Table 3: Operating Conditions
ParaMeter
MIN
tYP
MaX
uNIts
Case temperature (TC)
-20
-
+85
°C
Supply voltage (VBATT)
3.0
3.5
4.8
V
-
1
10
A
0.2
-
1.6
V
Turn on Time (TON)
-
-
1
s
Turn Off Time (TOFF)
-
-
1
s
Rise Time (TRISE)
-
-
1
s
Fall Time (TFALL)
-
-
1
s
VRAMP Input Capacitance
-
3
-
pF
VRAMP Input Current
-
-
10
Duty Cycle
-
-
50
Power supply leakage current
Control Voltage Range
COMMeNts
VBATT = 4.8 V, VRAMP = 0 V,
TX_EN = LOW
No RF applied
VRAMP = 0.2 V, TX_EN = LOW Y HIGH
PIN = 5 dBm
VRAMP = 0.2 V, TX_EN = HIGH Y LOW
PIN = 5 dBm
POUT = -10 dBm Y PMAX (within 0.2 dB)
POUT = PMAX Y -10 dBm (within 0.2 dB)
A
%
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Table 4: Digital Inputs
ParaMeter
sYMBOL
MIN
tYP
MaX
uNIts
Logic High Voltage
VIH
1.2
-
3.0
V
Logic Low Voltage
VIL
-
-
0.5
V
Logic High Current
|IIH|
-
-
30
A
Logic Low Current
|IIL|
-
-
30
A
Table 5: Logic Control Table
OPeratIONaL MODe
Bs
tX_eN
GSM850/900
LOW
HIGH
DCS/PCS
HIGH
HIGH
-
LOW
PA DISABLED
4
Data Sheet - Rev 2.0
02/2009
AWT6155
Table 6: Electrical Characteristics for GSM850 GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH
MIN
tYP
MaX
uNIt
824
-
849
MHz
0
3
5
dBm
34.0
34.8
-
dBm
Freq = 824 to 849 MHz
Degraded Output Power
(POUT)
32
32.8
-
dBm
VBATT = 3.0 V, TC = +85 °C
PIN = 0 dBm
PAE @ PMAX
48
53
-
%
Forward Isolation 1
-
-49
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
Forward Isolation 2
-
-29
-15
dBm
TX_EN = HIGH ,VRAMP = 0.2 V
PIN = 5 dBm
Cross Isolation
(2Fo @ DCS/PCS port)
-
-30
-20
dBm
POUT < 34.0 dBm
Cross Isolation
(3Fo @ DCS/PCS port)
-
-20
-12
dBm
POUT < 34.0 dBm
Second Harmonic
-
-23
-10
dBm
POUT < 34.0 dBm
Third Harmonic
-
-18
-10
dBm
POUT < 34.0 dBm
n * fo (n > 4), Fo  12.75
GHz
-
-30
-10
dBm
POUT < 34.0 dBm
ParaMeter
Operating Frequency
( FIN )
Input Power (PIN)
Output Power (PMAX)
COMMeNts
Freq = 824 to 849 MHz
VSWR = 6:1 All Phases , POUT < 34.0 dBm
Stability
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
No Permanent Degradation
VSWR 10:1, All Phase Angles
RX Noise Power
-
-88
-82
dBm
Input Return Loss
-
1.5:1
2.5:1
VSWR
Data Sheet - Rev 2.0
02/2009
POUT < 34.0 dBm
FTX = 849 MHz, RBW = 100 kHz,
FRX = 869 to 894 MHz, POUT < 34.0 dBm
POUT < 34.0 dBm
5
AWT6155
Table 7: Electrical Characteristics for GSM850 8PSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
824
-
849
MHz
Input Power
0
3
5
dBm
PAE
20
28
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-37
-62
-74
-78
-34
-58
-64
-66
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
POUT = +29 dBm
EVM
-
1
5
%
All Conditions under Polar operation
POUT = +29 dBm
Operating Frequency
6
( FIN )
Data Sheet - Rev 2.0
02/2009
COMMeNts
FIN = 824 to 849 MHz
POUT set = +29 dBm
AWT6155
Table 8: Electrical Characteristics for GSM900 GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
880
-
915
MHz
0
3
5
dBm
34.0
34.8
-
dBm
Freq = 880 to 915 MHz
Degraded Output Power
(POUT)
32
32.8
-
dBm
VBATT = 3.0 V, TC = +85 °C
PIN = 0 dBm
PAE @ PMAX
50
56
-
%
Forward Isolation 1
-
-46
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
Forward Isolation 2
-
-28
-15
dBm
TX_EN = HIGH ,VRAMP = 0.2 V
PIN = 5 dBm
Cross Isolation
(2Fo @ DCS/PCS port)
-
-24
-18
dBm
POUT < 34.0 dBm
Cross Isolation
(3Fo @ DCS/PCS port)
-
-21
-12
dBm
POUT < 34.0 dBm
Second Harmonic
-
-22
-10
dBm
POUT < 34.0 dBm
Third Harmonic
-
-18
-10
dBm
POUT < 34.0 dBm
n * fo (n > 4), Fo  12.75
GHz
-
-29
-8
dBm
POUT < 34.0 dBm
Operating Frequency
( FIN )
Input Power (PIN)
Output Power (PMAX)
COMMeNts
Freq = 880 to 915 MHz
VSWR = 6:1 All Phases , POUT < 34.0 dBm
Stability
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
No Permanent Degradation
VSWR 10:1, All Phase Angles
-
-87
-76
dBm
FTX = 915 MHz, RBW = 100 kHz,
FRX = 925 to 935 MHz, POUT < 34.0 dBm
-
-87
-82
dBm
FTX = 915 MHz, RBW = 100 kHz,
FRX = 935 to 960 MHz, POUT < 34.0 dBm
-
1.5:1
2.5:1
VSWR
RX Noise Power
Input Return Loss
POUT < 34.0 dBm
Data Sheet - Rev 2.0
02/2009
POUT < 34.0 dBm
7
AWT6155
Table 9: Electrical Characteristics for GSM900 8PSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = LOW, TX_EN = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
880
-
915
MHz
Input Power
0
3
5
dBm
PAE
20
28
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-38
-65
-74
-78
-34
-58
-64
-66
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
POUT = +29 dBm
EVM
-
1
5
%
All Conditions under Polar operation
POUT = +29 dBm
Operating Frequency
8
( FIN )
Data Sheet - Rev 2.0
02/2009
COMMeNts
FIN = 880 to 915 MHz
POUT set = +29 dBm
AWT6155
Table 10: Electrical Characteristics for DCS GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width = 1154 µs
Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH
MIN
tYP
MaX
uNIt
1710
-
1785
MHz
0
3
5
dBm
Output Power (PMAX)
32.0
32.9
-
dBm
Freq = 1710 to1785 MHz
Degraded Output Power
(POUT)
30.0
31.0
-
dBm
VBATT = 3.0 V, TC = +85 °C
PIN = 0 dBm
45
51
-
%
Freq = 1710 to1785 MHz
Forward Isolation 1
-
-46
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
Forward Isolation 2
-
-27
-15
dBm
TX_EN = HIGH ,VRAMP = 0.2 V
PIN = 5 dBm
Second Harmonic
-
-19
-10
dBm
POUT < 32.0 dBm
Third Harmonic
-
-30
-15
dBm
POUT < 32.0 dBm
n * fo (n > 4), Fo  12.75
GHz
-
-34
-8
dBm
POUT < 32.0 dBm
ParaMeter
Operating Frequency
( FIN )
Input Power (PIN)
PAE @ PMAX
COMMeNts
VSWR = 8:1 All Phases , POUT < 32.0 dBm
Stability
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
No Permanent Degradation
VSWR 10:1, All Phase Angles
RX Noise Power
-
-89
-82
dBm
Input Return Loss
-
1.5:1
2.5:1
VSWR
Data Sheet - Rev 2.0
02/2009
POUT < 32.0 dBm
FTX = 1785 MHz, RBW = 100 kHz,
FRX = 1805 to1880 MHz, POUT < 32.0 dBm
POUT < 32.0 dBm
9
AWT6155
Table 11: Electrical Characteristics for DCS 8PSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
1710
-
1785
MHz
Input Power
0
3
5
dBm
PAE
22
28
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-37
-64
-74
-78
-34
-58
-64
-66
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
POUT = +28.5 dBm
EVM
-
1
5
%
All Conditions under Polar operation
POUT = +28.5 dBm
Operating Frequency
10
( FIN )
Data Sheet - Rev 2.0
02/2009
COMMeNts
FIN = 1710 to 1785 MHz
POUT set = +28.5 dBm
AWT6155
Table 12: Electrical Characteristics for PCS GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width = 1154 µs
Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH
COMMeNts
ParaMeter
MIN
tYP
MaX
uNIt
Operating Frequency (FIN)
1850
-
1910
MHz
0
3
5
dBm
Output Power (PMAX)
32.0
32.9
-
dBm
Freq = 1850 to1910 MHz
Degraded Output Power
(POUT)
30.0
31.0
-
dBm
VBATT = 3.0 V, TC = +85 °C
PIN = 0 dBm
45
51
-
%
Freq = 1850 to1910 MHz
Forward Isolation 1
-
-45
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
Forward Isolation 2
-
-27
-15
dBm
TX_EN = HIGH ,VRAMP = 0.2 V
PIN = 5 dBm
Second Harmonic
-
-26
-10
dBm
POUT < 32.0 dBm
Third Harmonic
-
-34
-15
dBm
POUT < 32.0 dBm
n * fo (n > 4), Fo  12.75
GHz
-
-33
-8
dBm
POUT < 32.0 dBm
Input Power (PIN)
PAE @ PMAX
VSWR = 8:1 All Phases , POUT < 32.0 dBm
Stability
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz
-
-
-30
dBm
FOUT > 1 GHz
No Permanent Degradation
VSWR 10:1, All Phase Angles
RX Noise Power
-
-90
-82
dBm
Input Return Loss
-
1.5:1
2.5:1
VSWR
Data Sheet - Rev 2.0
02/2009
POUT < 32.0 dBm
FTX = 1910 MHz, RBW = 100 kHz,
FRX = 1930 to1990 MHz, POUT < 32.0 dBm
POUT < 32.0 dBm
11
AWT6155
Table 13: Electrical Characteristics for PCS 8PSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
Operating Frequency (FIN)
1850
-
1910
MHz
Input Power
0
3
5
dBm
PAE
22
28
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-37
-64
-74
-78
-34
-58
-64
-66
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
POUT = +28.5 dBm
EVM
-
1
5
%
All Conditions under Polar operation
POUT = +28.5 dBm
12
Data Sheet - Rev 2.0
02/2009
COMMeNts
FIN = 1850 to 1910 MHz
POUT set = +28.5 dBm
AWT6155
APPLICATION INFORMATION
DCS/PCS
RF INPUT
1
2
BSEL
33pF 3)
TXEN
VBAT
RAMP
33pF 3)
47µF 3)
12pF 2)
2.2k 1)
2.7pF 2)
68pF 1)
22nF 2)
GSM RF
INPUT
3
4
5
6
7
8
DCS/PCS_IN
DCS/PCS_OUT
11
Matching 4)
BS
TX_EN
V BATT
V RAMP
aWt6155
10
N/C
C EXT
GND
GSM_OUT
GSM_IN
9
asM
or
FeM
Matching 4)
1) Component values depends on baseband chipset used.
2) This component should be placed as close to the device pin as possible.
3) These components are recommended as good design practice for improving noise rejection characteristics.
The values specified are not critical as they may not be required in the final application.
4) Actual matching component values depend on PCB layout and ASM/FEM used.
Figure 4: Recommended Application Circuit
Figure 5: Branding Specification Diagram
Data Sheet - Rev 2.0
02/2009
13
AWT6155
Package Outline
Figure 6: M37 Package Outline (P800-2414) - 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module
14
Data Sheet - Rev 2.0
02/2009
AWT6155
Figure 7: Recommended PCB Layout Information
Data Sheet - Rev 2.0
02/2009
15
AWT6155
ORDERING INFORMATION
OrDer
NuMBer
teMPerature
raNGe
PaCKaGe
DesCrIPtION
COMPONeNt PaCKaGING
AWT6155RM37P8
-20 °C to +85°C
RoHS-compliant 11 Pin
5 mm x 5 mm x 1.0 mm
Surface Mount Module
Tape and Reel, 2500 pieces per reel
AWT6155RM37P9
-20 °C to +85°C
RoHS-compliant 11 Pin
5 mm x 5 mm x 1.0 mm
Surface Mount Module
Partial Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: [email protected]
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
16
Data Sheet - Rev 2.0
02/2009