AWT6123 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Advanced Product Information Rev 0.7 FEATURES PRODUCT DESCRIPTION • • • • • • • • • • ANADIGICS is introducing two 3-stage power amplifiers designed for high performance in Quad Band Applications. The amplifiers are packaged in a very small 6 x 8mm module. The output power is controlled by changing the voltage applied to the VAPC pin for each amplifier. The part is shut down by removing the regulated supply voltage. InGaP HBT Technology +35dBm GSM Output Power at 3.5V +32.5dBm DCS/PCS Output Power at 3.5V 35% GSM850 PAE (Class 5) 50% GSM850 PAE (Class 4) 55% GSM900 PAE 50% DCS/PCS PAE Low Profile 1.4mm Package Small footprint 6 x 8mm SMT Package GPRS Capable (class 12) APPLICATIONS GSM850/GSM900/DCS/PCS Handsets Dual/Tri/Quad Band PDA The amplifier is manufactured using an advanced InGaP HBT technology, offering state of the art reliability, temperature stability and ruggedness. Passive matching networks are integrated to provide internal matching to 50Ω at both the RF inputs and outputs. Internal DC blocks are provided at the RF inputs. DCS/PCS_IN VCCA_DCS/PCS VAPC_DCS/PCS VREG_DCS/PCS VAPC_GSM VREG_GSM VCCA_GSM DCS/PCS_OUT DCS/PCS Bias VCCB GSM Bias GSM_OUT GSM_IN Figure 1: Block Diagram 02-2003 AWT6123 ELECTRICAL CHARACTERISTICS Table 1: Absolute Maximum Ratings PARAMETER MIN MAX UNITS Supply Voltage (VCC) +7 V RF Input Power (RFIN) +14 dBm Control Voltage (VAPC) 3.0 V 150 °C Storage Temperature (TSTG) -55 Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 2: ESD Ratings PARAMETER METHOD RATING UNITS ESD threshold voltage (RF ports) HBM 250 V ESD threshold voltage (control inputs) HBM 250 V ESD threshold voltage (RF inputs) CDM TBD V ESD threshold voltage (control inputs) CDM TBD V Table 3: Operating Conditions PARAMETER CONDITIONS MIN TYP MAX UNITS Supply voltage (V CC ) 3.0 3.5 4.2 V Regulated voltage (V REG) 2.7 2.8 3.0 V 3.5 4.5 mA V REG V 2.2 V Individual Regulated current (IREG) V REG_GSM or VREG_DCS/PCS = 3.0V Control voltage (V APC ) 0.45 Control Voltage (V APC) for max power 1.8 V APC = 0.45V Individual Control current (IAPC) See Note 1 Leakage current -3 mA V APC = 2.2V 3 mA V APC = 3.0V 6 mA 0 10 µ -20 85 V CC = 4.2V, No RF Applied V REG_GSM = VREG_DCS/PCS = 0V Case temperature (TC) A °C Note 1: The VAPC must be pulled down to 0.45V with a low impedance. If VREG_GSM & V REG_DCS/PCS inputs are connected then both VAPC inputs must be pulled down to 0.45V to disable both power amplifiers. 2 Advanced Product Information - Rev 0.7 02-2003 AWT6123 Figure 3: Application Block Diagram For Single Output Power Control DCS/PCS_IN DCS/PCS_OUT VAPC_DCS/PCS VCCA_DCS/PCS VREG_DCS/PCS Reg DCS/PCS Bias ~3.5mA EN_A VCCB ~3.5mA V REG_GSM V CCA_GSM Reg EN_B To Filter/ Switch GSM Bias VAPC_GSM GSM_OUT GSM_IN BAND EN_A EN_B GSM800/900 OFF ON DCS/PCS ON OFF Power Control IC -3.0 to +3.0mA Vramp Figure 4: Application Block Diagram For Dual Output Power Control DCS/PCS_IN DCS/PCS_OUT To Filter/ Switch VAPC_DCS/PCS VCCA_DCS/PCS ~7mA Reg EN V CCA_GSM DCS/PCS Bias V CCB VREG_DCS/PCS VREG_GSM GSM Bias V APC_GSM GSM_OUT GSM_IN To Filter/ Switch Power Control IC -3.0 to +3.0mA -3.0 to +3.0mA Vramp Note: Power control outputs need to sink current to power down each power amplifier Advanced Product Information - Rev 0.7 02-2003 3 AWT6123 Table 4: Electrical Characteristics for GSM850/900 Unless otherwise specified:VCC = 3.5V, PIN = 5.5dBm, VREG_GSM = 2.8V, VAPC_GSM = 2.2V, ZIN = ZOUT = 50Ω, TC = 25 °C VREG_DCS/PCS = VAPC_DCS/PCS = 0V, Pulse Width =1154µs PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT 849 915 MHz MHz 8 dBm Operating Frequency FIN 824 880 Input Power PIN 3 5.5 Output Power PMAX 34.5 35 dBm Efficiency GSM850 Class 4 PAE POUT = PMAX 45 50 % Efficiency GSM850 Class 5 PAE POUT = 31.5dBm 35 % GSM850 Band (824 to 849MHz) VCC = 3.0V, VREG = 2.7V, TC = 85°C, PIN = 3dBm Degraded Output Power 32.5 dBm GSM900 Band (880 to 915MHz) Output Power PMAX Efficiency GSM900 Class 4 PAE Degraded Output Power POUT = PMAX VCC = 3.0V, VREG = 2.7V, TC = 85°C, PIN = 3dBm 34.5 35 dBm 50 55 % 32.5 dBm All Bands Isolation VAPC = 0.45V, PIN = 8dBm Cross Isolation 2*FIN at DCS/PCS_OUT port, DCS/PCS PA = OFF Harmonics (2-14F) VAPC = 0.45 to 2.2V Stability All VAPC, All VCC, All VREG, TC = -20 to 85°C, VSWR = 8:1 All phases Ruggedness All VAPC, All VCC, All VREG, TC = -20 to 85°C, All phases -35 -12 -30 dBm -20 dBm -7 dBm -36 dBm 10:1 ratio RBW=VBW=100kHz, PIN = 3.0 to 8dBm, FIN = 915MHz, FOUT = FIN + 10 to 20MHz -70 dBm RBW=VBW=100kHz, PIN = 3.0 to 8dBm, FIN = 849 or 915MHz, FOUT = FIN + 20 to 45MHz -82 dBm POUT = 5dBm to PMAX 2.5:1 RX Band Noise Power Input Return Loss 4 Advanced Product Information - Rev 0.7 02-2003 AWT6123 Table 5: Electrical Characteristics for DCS/PCS Unless otherwise specified: VCC = 3.5V, PIN = 5.5dBm, VREG_DCS/PCS = 2.8V, VAPC_DCS/PCS = 2.2V, ZIN = ZOUT = 50Ω, TC = 25 °C VREG_GSM = VAPC_GSM = 0V, Pulse Width =1154µs PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT 1785 1910 MHz MHz 8 dBm Operating Frequency FIN 1710 1850 Input Power PIN 3 5.5 FIN = 1710 to 1785MHz 32.0 32.5 dBm FIN = 1850 to 1910MHz 32.0 32.5 dBm VCC = 3.0V, VREG = 2.7V, TC = 85°C FIN = 1710 to 1785MHz 29.5 dBm VCC = 3.0V, VREG = 2.7V, TC = 85°C FIN = 1880 to 1910MHz 29.5 dBm Efficiency (POUT =PMAX) FIN = 1710 to 1910MHz 45 Isolation VAPC = 0.45V, PIN = 8dBm -35 -30 dBm Harmonics (2-7F) VAPC = 0.45 to 2.2V -12 -7 dBm Stability All VAPC, All VCC, All VREG, TC = -20 to 85°C, VSWR = 8:1 All phases -36 dBm Ruggedness All VAPC, All VCC, All VREG, TC = -20 to 85°C, All phases RX Band Noise Power RBW=VBW=100kHz, PIN = 3.0 to 8.0dBm, FIN = 1785 or 1910MHz, FOUT = FIN + 20 to 95MHz Input Return Loss POUT = 0dBm to PMAX Output Power Degraded Output Power PMAX Advanced Product Information - Rev 0.7 02-2003 50 % 10:1 ratio -80 -74 dBm 2.5:1 5 AWT6123 TYPICAL PERFORMANCE CHARACTERISTICS GSM850/900 Pout vs Vapc 2TX slots 40 35 30 25 20 Pout (dBm) 15 10 Vcc = 3.5V, Tempc = +25C, PW = 1154us, Pin = 5.5dBm 5 0 -5 -10 -15 836.5MHz 897.5MHz -20 -25 -30 -35 -40 0.8 0.9 1.0 1.1 1.2 1.3 1 .4 1 .5 1 .6 1.7 1.8 1.9 2.0 2 .1 2 .2 Vapc (V) Figure 5:GSM850/900 Pout vs Vapc DCS/PCS POUT vs Vapc 2TX slots 35 30 25 20 VCC =3.5V, Pin = 5.5dBm, Temp = +25C, PW = 1154us Pout(dBm) 15 10 5 0 -5 -10 1880MHz 1747.5MHz -15 -20 -25 -30 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Vapc(V) Figure 6:DCS/PCS Pout vs Vapc 6 Advanced Product Information - Rev 0.7 02-2003 1.7 1.8 1.9 2.0 AWT6123 TYPICAL PERFORMANCE CHARACTERISTICS GSM850/900 PMAX & PAE @ 3.5V 70 36.8 Pout Pout (dBm) 36.6 P in = +5.5 dBm, Vreg = 2.8V Temp. = + 25°C PAE 68 66 36.4 64 36.2 62 36.0 60 35.8 58 35.6 56 35.4 54 35.2 52 35.0 50 34.8 48 34.6 46 34.4 44 34.2 42 34.0 820 830 840 850 860 870 880 890 900 910 Power Added Efficiency (%) 37.0 40 920 Frequency (MHz) Figure 7: GSM850/900PMAX & PAE vs Frequency DCS/PCS PMAX & PAE @ 3.5V 60 33.8 Pout Pout (dBm) 33.6 Pin = +5.5 dBm, Vreg = 2.8V Temp. = + 25°C PAE 59 58 33.4 57 33.2 56 33.0 55 32.8 54 32.6 53 32.4 52 32.2 51 32.0 50 31.8 49 31.6 48 31.4 47 31.2 46 31.0 1700 1720 1740 1760 1780 1800 1820 1840 1860 1880 1900 Power Added Efficiency (%) 34.0 45 1920 Frequency (M H z ) Figure 8: DCS/PCS PMAX & PAE vs Frequency Advanced Product Information - Rev 0.7 02-2003 7 AWT6123 Figure 4: Package Outline (X-Ray View) P22 P21 P20 P19 P18 P17 P1 P16 P2 P15 P3 P14 P4 P13 P5 P12 P6 P7 P8 P9 P10 P11 TOP VIEW (X-RAY) Table 6: Pin Description 8 PIN NAME 1 DCS/PCS_IN 2 VAPC_ DCS/PCS 3 GND 4 VAPC_GSM 5 GSM_IN 6 DESCRIPTION PIN NAME DCS/PCS RF Input 12 GSM_OUT Power Control Voltage DCS/PCS 13 GND Ground Ground 14 GND Ground Power Control Voltage GSM 15 GND Ground GSM RF Input 16 DCS/PCS_ OUT VREG_GSM Regulated Supply GSM 17 VCCB Final stage Supply Voltage 7 VCCA_GSM VCC to stages 1 & 2 and bias circuits for GSM 18 GND Ground 8 GND Ground 19 GND Ground 9 GND Ground 20 GND Ground 10 GND Ground 21 VCCA_ DCS/PCS VCC to stages 1 & 2 and bias circuits for DCS/PCS 11 GND Ground 22 VREG_ DCS/PCS Regulated Supply DCS/PCS Advanced Product Information - Rev 0.7 02-2003 DESCRIPTION GSM RF Output DCS/PCS RF Output AWT6123 Figure 5: Package Drawing P22 P21 P20 P19 P18 P17 P1 P16 P2 P15 P3 P14 P4 P13 P5 P12 P6 P7 P8 P9 P10 P11 TOP VIEW (X-RAY) P17 P19 P20 P21 P22 P16 P1 P15 P2 P14 P3 P13 P4 P12 P5 P11 TOP VIEW P18 P10 P9 P8 P7 P6 SIDE VIEW BOTTOM VIEW Advanced Product Information - Rev 0.7 02-2003 9 AWT6123 ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 10 Advanced Product Information - Rev 0.7 02-2003