APM2055N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12A, RDS(ON)=55mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability TO-252 and SOT-223 Packages Top View of TO-252 1 2 3 G D S Top View of SOT-223 D Applications • • Switching Regulators G Switching Converters Ordering and Marking Information A P M 2 055 N Tem p. R ange Package C ode AP M 2055N V : AP M 2055N XXXXX AP M 2055N XXXXX Absolute Maximum Ratings Symbol N-Channel MOSFET Package C ode U : T O -2 5 2 V : S O T -2 2 3 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TR : Tape & R eel H a n d lin g C o d e AP M 2055N U : S XXXXX - D a te C o d e XXXXX - D a te C o d e (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 ID Maximum Drain Current – Continuous 12 IDM Maximum Drain Current – Pulsed 20 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 1 www.anpec.com.tw APM2055N Absolute Maximum Ratings (Cont.) Symbol Parameter Rating T A=25°C PD Maximum Power Dissipation T A=100°C TJ Storage Temperature Range R θjA Thermal Resistance – Junction to Ambient Electrical Characteristics Static BVDSS TO-252 50 SOT-223 3 TO-252 10 SOT-223 1.2 Parameter Unit W 150 °C -55 to 150 °C 50 °C/W Maximum Junction Temperature T STG Symbol (TA = 25°C unless otherwise noted) (TA = 25°C unless otherwise noted) Test Condition Min. APM2055N Typ. Max. Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage VGS =0V, ID=250µA IGSS Gate Leakage Current VGS =±16V, VDS =0V RDS(ON) Drain-Source On-state VGS =10V, ID=12A 55 70 Resistance VGS =4.5V, ID=6A 75 90 VGS =2.5V, ID=2A 140 160 Diode Forward Voltage IS=2A, VGS =0V 0.7 1.3 Qg Total Gate Charge VDS =15V, VGS=4.5V, 7 8.5 Qgs Gate-Source Charge ID=1.5A Qgd Gate-Drain Charge td(ON) Turn-on Delay Time VDD=15V, ID=2A, 9.2 18.6 tr Turn-on Rise Time VGS =10V, RG=6Ω 14 27 td(OFF) Turn-off Delay Time 31 58 Turn-off Fall Time 16 21 IDSS VGS(th) VSD 20 V VDS =16V, VGS=0V VDS =VGS, ID =250µA 0.7 Unit 0.9 1 µA 1.5 V ±100 nA mΩ V Dynamic tf Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 2.5 nC 1.5 2 ns www.anpec.com.tw APM2055N Typical Characteristics Output Characteristics Transfer Characteristics 20 20 ID-Drain Current (A) ID-Drain Current (A) VGS=4,5,6,7,8,9,10V 16 VGS=3V 12 8 VGS=2V 4 0 0 1 2 3 4 16 12 8 TJ=125°C 4 TJ=25°C 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) TJ=-55°C 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.125 1.50 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.100 VGS=4.5V 0.075 VGS=10V 0.050 0.025 0.000 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A) 3 www.anpec.com.tw APM2055N Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 2.25 ID=5A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.200 On-Resistance vs. Junction Temperature 0.175 0.150 0.125 0.100 0.075 0.050 0.025 VGS=4.5V 2.00 ID=5A 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 5 6 7 0.00 -50 8 VGS - Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance 5 600 VDS=15V ID=1.5A Frequency=1MHz 500 4 Capacitance (pF) VGS-Gate-Source Voltage (V) 50 TJ - Junction Temperature (°C) Gate Charge 3 2 1 0 25 Ciss 400 300 200 Coss Crss 100 0 1 2 3 4 5 6 7 0 8 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2055N Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 250 20 200 1 TJ=150°C Power (W) IS-Source Current (A) 10 TJ=25°C 150 100 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1E-3 1.6 0.01 VSD -Source-to-Drain Voltage (V) 0.1 1 10 100 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 0.1 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DM Z thJA 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 5 www.anpec.com.tw APM2055N Package Information SOT-223( Reference JEDEC Registration SOT-223) D A B1 a c H E L K e A1 e1 b B Dim A A1 B B1 c D E e e1 H L K α β Millimeters Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30 Inches Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 Min. 0.06 Max. 0.07 0.02 0.11 0.01 0.25 0.13 0.03 0.12 0.01 0.26 0.15 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0° Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 0.09 BSC 0.18 BSC 7.30 1.10 2.00 10° 0.26 0.04 0.06 0° 13° 0.29 0.04 0.08 10° 13° 6 www.anpec.com.tw APM2055N Package Information (Cont.) TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 0. 0 20 7 www.anpec.com.tw APM2055N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 8 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2055N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOT-223 Application TO-252 A B J T1 T2 W P E 62±1.5 C 12.75± 0.15 330±1 2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t 5.5 ± 0.05 1.5+ 0.1 1.5+ 0.1 7.5± 0.1 2.1± 0.1 0.3±0.05 A B C J P E 330 ±3 100 ± 2 13 ± 0. 5 8 ± 0.1 1.75± 0.1 F D 7.5 ± 0.1 1.5 +0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 2 ± 0.5 T1 16.4 + 0.3 -0.2 2.5± 0.5 W 16+ 0.3 - 0.1 D1 Po P1 Ao Bo Ko t 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 9 T2 www.anpec.com.tw APM2055N Cover Tape Dimensions Application SOT- 223 TO- 252 Carrier Width 12 16 Cover Tape Width 9.3 13.3 Devices Per Reel 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 10 www.anpec.com.tw