APM2306 N-Channel Enhancement Mode MOSFET Features • Pin Description D 30V/3.5A, RDS(ON)=70mΩ(typ.) @ VGS=5V 3 RDS(ON)=42mΩ(typ.) @ VGS=10V • • • Super High Dense Cell Design High Power and Current Handling Capability SOT-23 Package Applications 1 2 G S Top View of SOT-23 • • Switching Regulators Switching Converters Ordering and Marking Information A P M 23 06 Package Code A : S O T -23 O perating Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel H andling C ode T em p. R an ge Package Code A P M 2306 A : X - D ate C ode M 06X Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Maximum Pulsed Drain Current ( pulse width ≤ 300µs) 3.5 IDM Maximum Drain Current – Pulsed 16 PD Maximum Power Dissipation TJ Maximum Junction Temperature TSTG Unit V A TA=25°C 1.25 W TA=100°C 0.5 W 150 °C -55 to 150 °C Storage Temperature Range ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw APM2306 Electrical Characteristics Symbol Parameter (TA= 25°C unless otherwise noted) Test Condition Min. APM2306 Typ. Max. Unit Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage VDS =VGS, IDS=250µA Gate Leakage Current VGS =±20V, VDS=0V Drain-Source On-state VGS =5V, IDS=2.8A 70 90 Resistance VGS =10V, IDS=3.5A 42 65 Diode Forward Voltage ISD=1.25A, VGS=0V 1.1 1.5 VGS =0V, IDS=250µA 30 V VDS =24V, VGS=0V 1 1 1.5 µA V ±100 nA mΩ V Dynamic Qg Total Gate Charge VDS =15V, VGS=5V, 12.5 nC 3.7 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge 2.4 nC td(ON) Turn-on Delay Time 10 ns tr Turn-on Rise Time VDD=15V,ID=1A, 8 ns td(OFF) Turn-off Delay Time VGS =10V, RG=6Ω 19 ns 6.2 ns ID=3.5A tf Turn-off Fall Time Ciss Input Capacitance VGS =0V 410 pF Coss Output Capacitance VDS =15V 80 pF Crss Reverse Transfer Capacitance Frequency=1.0MHz 45 pF Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 2 www.anpec.com.tw APM2306 Typical Characteristics Output Characteristics Transfer Characteristics 12 16 TJ=-55°C VGS=5,6,7,8,9,10V ID-Drain Current (A) ID-Drain Current (A) 10 8 6 V GS=4V 4 TJ=25°C 12 8 TJ=125°C 4 2 V GS=3V 0 0 1 2 3 0 5 0 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Temperature On-Resistance vs. Drain Current RDS(on)-On-Resistance (mΩ) 1.75 1.50 1.25 -25 0 25 50 75 100 125 150 100 V GS=5V 80 60 VGS=10V 40 20 0 0 2 4 6 8 10 ID - Drain Current (A) Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 6 120 IDS=250µΑ 2.00 1.00 -50 1 VDS - Drain-to-Source Voltage (V) 2.25 VGS(th)-Threshold Voltage (V) 4 3 www.anpec.com.tw APM2306 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 70 RDS(on)-On Resistance (mΩ) RDS(on)-On-Resistance (mΩ) 120 100 80 ID=3.5A 60 40 20 4 6 8 10 50 40 30 20 -25 0 25 50 75 100 125 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge Capacitance 10 150 750 V D=15V ID=3.5A 625 8 Capacitance (pF) VGS-Gate-Source Voltage (V) 60 10 -50 0 2 V GS=10V ID=3.5A 6 4 2 500 Ciss 375 250 125 0 0 2 4 6 8 10 12 0 14 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 Coss Crss 4 www.anpec.com.tw APM2306 Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 14 30 10 10 Power (W) IS-Source Current (A) 12 8 6 4 TJ=25°C TJ=150°C 2 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 1 VSD -Source-to-Drain Voltage (V) 10 100 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA D=0.02 D=0.01 0.01 1E-4 SINGLE PULSE 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 5 www.anpec.com.tw APM2306 Packaging Information SOT-23 D B 3 E H 2 1 S e A L A1 Dim C M illim et er s Inc he s A M in. 1. 0 0 M ax. 1. 3 0 M in. 0. 0 39 M ax. 0. 0 51 A1 0. 0 0 0. 1 0 0. 0 00 0. 0 04 B 0. 3 5 0. 5 1 0. 0 14 0. 0 20 C 0. 1 0 0. 2 5 0. 0 04 0. 0 10 D 2. 7 0 3. 1 0 0. 1 06 0. 1 22 E 1. 4 0 1. 8 0 0. 0 55 0. 0 71 e 1. 9 0 B SC H 2. 4 0 L 0. 3 7 Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 0. 0 75 B SC 3. 0 0 0. 0 94 0. 11 8 0. 0 01 5 6 www.anpec.com.tw APM2306 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2306 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOT-23 A B 178±1 72 ± 1.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 C J 13.0 + 0.2 2.5 ± 0.15 8 T1 T2 P E 1.5± 0.3 W 8.0+ 0.3 - 0.3 8.4 ± 2 4 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 3.2± 0.1 1.4± 0.1 0.2±0.03 2.0 ± 0.1 3.15 ± 0.1 www.anpec.com.tw APM2306 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 9 www.anpec.com.tw