APM9953 P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-3A , RDS(ON)=75mΩ(typ.) @ VGS=-10V • • • 5 RDS(ON)=90mΩ(typ.) @ VGS=-4.5V / Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged & , % , 5 ! $ , / " # , SOP-8 Package SO − 8 5 5 Applications • / / Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. , , , , P-Channel MOSFET Ordering and Marking Information APM 9953 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & R eel H a n d lin g C o d e Tem p. R ange P a c k ag e C o d e A P M 9953 K : A P M 9953 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±10 * ID Maximum Drain Current Continuous -3 IDM Maximum Drain Current Pulsed -12 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 1 www.anpec.com.tw APM9953 Absolute Maximum Ratings Cont. Symbol PD TJ (TA = 25°C unless otherwise noted) Parameter Maximum Power Dissipation Rating TA=25°C 2.5 TA=100°C 1.0 Maximum Junction Temperature TSTG Storage Temperature Range * RθJA Thermal Resistance Junction to Ambient Electrical Characteristics Symbol Parameter Unit W 150 °C -55 to 150 °C 62.5 °C/W (TA = 25°C unless otherwise noted) Test Condition APM9953 Typ. Max. Min. Unit Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD = = Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VDS=VGS , IDS=-250µA VGS=±8V , VDS=0V Drain-Source On-state VGS=0V , IDS=-250µA -1 µA -0.7 -1 ±100 V nA VGS=-10V , IDS=-3A 76 100 Resistance VGS=-4.5V , IDS=-2A 93 125 Diode Forward Voltage ISD=-0.5A , VGS=0V -0.7 -1.3 VDS=-10V , IDS=-3A 5.3 6.9 VGS=-4.5V 1.04 VDS=-16V , VGS=0V > Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Tr Turn-on Delay Time Turn-on Rise Time td(OFF) Turn-off Delay Time VDD=-10V , IDS=-3A , VGEN=-4.5V , RG=6Ω Turn-off Fall Time Ciss Input Capacitance Coss Crss Output Capacitance VDS=-15V Reverse Transfer Capacitance Frequency=1.0MHz a b -0.5 mΩ V nC 0.62 Tf Notes V -20 VGS=0V 13 36 21.5 56 45 69.5 37 57.5 ns 552 118 76 pF : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 2 www.anpec.com.tw APM9953 Typical Characteristics Output Characteristics -VGS= 3,4,5,6,7,8,9,10V 10 -ID-Drain Current (A) 10 8 -VGS=2V 6 -ID-Drain Current (A) 12 4 -VGS=1.5V 2 0 1 2 3 4 5 6 o Tj=25 C 6 o Tj=-55 C 4 2 -VGS=1V 0 o Tj=125 C 8 12 Transfer Characteristics 7 8 9 0 0.4 10 -VDS - Drain-to-Source Voltage (V) 1.6 2.0 2.4 2.8 3.2 On-Resistance vs. Drain Current 0.11 RDS(ON)-On-Resistance (Ω) -IDS =250µA 1.25 1.00 -VGS(th)-Threshold Voltage (V) (Normalized) 1.2 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 0.8 0.75 0.50 0.25 -50 -25 0 25 50 75 -VGS=4.5V 0.09 0.08 -VGS=10V 0.07 0.06 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 0.10 0 2 4 6 8 10 -ID - Drain Current (A) 3 www.anpec.com.tw APM9953 Typical Characteristics On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 1.4 RDS(ON)-On-Resistance (Ω) (Normalized) 0.135 0.120 0.105 RDS(ON)-On-Resistance (Ω) -ID= 3A 0.090 0.075 0.060 0 1 2 3 4 5 6 7 8 9 -VGS = 4.5V -IDS = 2A 1.3 1.2 1.1 1.0 0.150 0.9 0.8 0.7 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 5 75 100 125 150 Capacitance 780 -VDS= 4.5V -IDS= 2A Frequency=1MHz 700 Ciss 600 3 2 1 500 400 Capacitance (pF) -VGS-Gate-Source Voltage (V) 50 (°C) TJ - Junction Temperature Gate Charge 4 25 300 Coss 200 100 0 Crss 0 1 2 3 4 5 0 6 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 4 8 12 16 20 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM9953 Typical Characteristics Source-Drain Diode Forward Voltage 10 12 40 o Tj=150 C o Tj=25 C 1 20 Power (W) 30 -IS-Source Current (A) Single Pulse Power 10 0.1 0.2 0.4 0.6 0.8 1.0 0 0.01 1.2 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 30 Time (sec) 1 Duty Cycle=0.5 D=0.2 0.1 0.01 1E-4 D=0.1 Normalized Effective Transient Thermal Impedance Normalized Thermal TransientImpedence, Junction to Ambient D=0.05 1.Duty Cycle, D= t1/t2 o D=0.02 2.Per Unit Base=RthJA=62.5 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted SINGLE PULSE 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 5 www.anpec.com.tw APM9953 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 1. 27BSC 0. 50BSC 8° 8° 6 www.anpec.com.tw APM9953 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature Convection or IR/ Convection VPR 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 10 °C /second max. 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. 215~ 219°C or 235 +5/-0°C 10 °C /second max. 60 seconds Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9953 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 W Bo F Ao D1 Ko T2 J C A B T1 Application SOP-8 A 330±1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2± 0.2 F D D1 Po P1 Ao 1.55+ 0.25 5.5 ± 0.1 1.55±0.1 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 8 www.anpec.com.tw APM9953 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 9 www.anpec.com.tw