APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-6A, RDS(ON)=45mΩ(max.) @ VGS=-4.5V 5 RDS(ON)=65mΩ(max.) @ VGS=-2.5V / Super High Dense Cell Design for Extremely & , % , Low RDS(ON) 5 ! $ , Reliable and Rugged / " # , SO-8 Package SO − 8 5 5 Applications • Portable Equipment and Battery Powered Systems. , Ordering and Marking Information Lead Free Code Handling Code Temp. Range Package Code APM9935 XXXXX P-Channel MOSFET (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 * , XXXXX - Date Code Absolute Maximum Ratings Symbol , , Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Orginal Device APM9935 APM9935K : / / Power Management in Notebook Computer , ID Maximum Drain Current Continuous -6 IDM Maximum Drain Current Pulsed -10 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 1 www.anpec.com.tw APM9935 Absolute Maximum Ratings (Cont.) Symbol (TA = 25°C unless otherwise noted) Parameter PD Maximum Power Dissipation TJ Maximum Junction Temperature Rating TA=25°C 2.5 TA=100°C 1.0 TSTG Storage Temperature Range * RθJA Thermal Resistance Junction to Ambient Unit W 150 °C -55 to 150 °C 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Sym bol (TA = 25°C unless otherwise noted) Param eter Test Condition APM 9935 Typ. M ax. M in. Unit Static BV DSS D rain-Source Breakdown Voltage V G S =0V , I DS =-250µA I DSS Zero G ate Voltage D rain C urrent V DS =-16V , V G S =0V G ate T hreshold Voltage V DS =V G S , I DS =-250µA G ate Leakage C urrent V G S(th) I G SS R DS(O N) = D rain-Source O n-state R esistance = V SD Dynam ic D iode Forward Voltage Total G ate C harge Q gs G ate-Source C harge Q gd G ate-D rain C harge t d(O N) Turn-on D elay Tim e T r Turn-on R ise Tim e t d(O FF) -1 ìA -1 V V G S =±12V , V DS =0V ±100 nA V G S =-4.5V , I DS =-6A 45 V G S =-2.5V , I DS =-5A 65 I S =-2A , V G S =0V > Q g Turn-off D elay Tim e T f Turn-off Fall Tim e C iss Input C apacitance C oss O utput C apacitance C rss R everse Transfer C apacitance V -20 V DS =-4V , I DS =-6A V G S =-4.5V V DD =-4V , I DS =-6A , V G EN =-4.5V , R G =10Ω V G S =0V , V DS =-15V Frequency=1.0M H z -0.5 -0.7 -0.7 -1.3 17 22 mΩ V nC 4.1 1.6 23 45 45 80 45 90 32 55 ns 1242 341 pF 217 Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 2 www.anpec.com.tw APM9935 Typical Characteristics Output Characteristics 10 8 -ID-Drain Current (A) -VGS=2V 4 6 6 4 TJ=125°C 2 2 0 10 -VGS=3,4,5,6,7,8,9,10V 8 -ID-Drain Current (A) Transfer Characteristics 0 1 2 3 4 5 6 7 TJ=25°C 0 0.0 8 0.5 -VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 On-Resistance vs. Drain Current 0.08 -I DS=250uA RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) 0.07 1.25 0.06 1.00 -VGS=2.5V 0.05 0.04 0.75 -VGS=4.5V 0.03 0.50 0.02 0.25 0.00 -50 1.0 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 TJ=-55°C 0.01 -25 0 25 50 75 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 0 1 2 3 4 5 6 7 8 9 10 -ID - Drain Current (A) 3 www.anpec.com.tw APM9935 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.12 1.8 -ID=6A -VGS=4.5V -ID=6A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 1.6 0.10 1.4 0.08 1.0 0.04 0.8 0.02 0.00 1.2 0.06 0.6 1 2 3 4 5 6 7 8 9 0.4 -50 10 -25 0 Gate Charge 75 100 125 150 Capacitance 2000 -VDS=4V -ID=6A 4 Frequency=1MHz 3 2 Ciss 1200 800 1 400 0 0 0 4 8 12 16 20 QG -Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 Capacitance (pF) 1600 -VGS-Gate-Source Voltage (V) 50 TJ - Junction Temperature (°C) -VGS - Gate-to-Source Voltage (V) 5 25 Coss Crss 0 4 8 12 16 20 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM9935 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 10 80 60 TJ=25°C 0.1 40 TJ=150°C Power (W) 1 -IS-Source Current (A) Single Pulse Power 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 1 10 30 Time(sec) -VSD -Source-to-Drain Voltage (V) Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 Normalized Effective Transient Thermal Impedance 2 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A=P DM Z thJA 4.Surface Mounted D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 5 www.anpec.com.tw APM9935 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 1. 27BSC 0. 50BSC 8° 8° 6 www.anpec.com.tw APM9935 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9935 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 8 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM9935 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 9 www.anpec.com.tw