2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS IC 10 A VCE 35 V PDISS 83.3 W @ TC = 75 C O O O O O TJ -65 C to +200 C TSTG -65 C to +200 C θJC 1.50 C/W O 1 = Emitter & Diode Cathode 2 = Collector 3 = Base 4 = Diode Anode ¼-28 UNF Thread NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS BVCEO IC = 200 mA BVCES IC = 200 mA ICES VCE = 60 V BVEBO IE = 20 mA hFE VCE = 6.0 V VF IF = 10 mA hfe VCE = 28 V COB VCB = 30 V PIE VCC = 28 V f = 30 MHz GPE ηC IMD VCC = 28 V MINIMUM TYPICAL V 70 V TC = 55 C 30 f = 50 MHz mA 3.5 V 20 --0.8 IC = 1.0 A UNITS 35 O IC = 5.0 A MAXIMUM V --- 2.0 f = 1.0 MHz 250 pF IC = 20 mA POE = 75.0 W POE = 37.5 W 1.88 3.75 W IC = 20 mA POE = 75.0 W f = 30 MHz 13 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. -30 dB % dB REV. A 1/1