2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES: • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 55 V VCE 30 V PDISS 3.5 W @ TC = 25 C TJ -65 to +200 C TSTG -65 to +200 C θJC 50 C/W O O 1 = Emitter 2 = Base 3 = Collector O O CHARACTERISTICS SYMBOL TEST CONDITIONS BVCER IC = 5.0 mA BVEBO IE = 100 µA ICES RBE = 10Ω TYPICAL ft VCE = 15 V COB VCB = 30 V VCC = 28 V f = 200 MHz 3.0 V f = 200 MHz 1.0 µA 10.0 mA 20 µA MHz 1200 f = 1.0 MHz POUT = 1.0 W UNITS V TC = +150 C IC = 50 mA MAXIMUM 55 O VCE = 15 V VCE = 15 V ηC MINIMUM VCE = 50 V ICEO GPE NONE O TA = 25 C 3.0 pF 5.0 dB 35 % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.