BLY91C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY91C is Designed for 28 V Large Signal Class A,B and C Amplifier Applications up to 175 MHz. FEATURES INCLUDE: PACKAGE STYLE .380" 4L STUD • Emitter Ballasting • Gold Metalization • 3/8" SOE Stud Package MAXIMUM RATINGS IC 1.0 A VCE 35 V VCB 65 V PDISS 20 W @ TC = 25 °C TJ -65 °C to + 200 °C TSTG -65 °C to + 150 °C θJC 8.7 °C/W CHARACTERISTICS 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 200 mA 65 V BVCEO IC = 10 mA 35 V BVEBO IE = 1.0 mA 4.0 V ICES VCE = 36 V hFE VCE = 5.0 V COB VCB = 30 V PG ηC VCC =28 V IC = 400 mA 10 f = 1.0 MHz POUT = 8.0 W f = 175 MHz 12.0 13.0 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 100 --- 15 pF dB % REV. A 1/1