MLN1033S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI MLN1033S is Designed for Class A Linear Applications up to 1.0 GHz. A 45° D FEATURES: • Class A Operation • PG = 9.0 dB at 2.0 W/1.0 GHz • Omnigold™ Metalization System S S B G C D J E I F G MAXIMUM RATINGS H K IC 10 A VCB VCE PDISS #8-32 UNC DIM MINIMUM inches / mm inches / mm 60 V A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 35 V C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 140 W @ TC = 25 °C -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 17 °C/W CHARACTERISTICS .130 / 3.30 .245 / 6.22 H .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10627 TC = 25 °C NONETEST CONDITIONS SYMBOL .137 / 3.48 .572 / 14.53 F G TJ MAXIMUM BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PG VCE = 18 V POUT = 2.0 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 220 mA f = 1.0 GHz UNITS 35 9.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 mA 100 --- 5.5 pF dB REV. B 1/1