TVV100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 8L FLG The ASI TVV100 is Designed for C D A B FULL R FEATURES: G • Input Matching Network • • Omnigold™ Metalization System O F E .1925 .125 K 4 x .060 R H I J N L M MAXIMUM RATINGS MINIMUM DIM 16 A IC 65 V .115 / 2.92 .065 / 1.65 D 33 V 3.5 V VEBO PDISS O 150 W @ TC = 25 C O O TJ -65 C to +200 C TSTG -65 OC to +150 OC θ JC 0.8 OC/W CHARACTERISTICS SYMBOL .125 / 3.18 .360 / 9.14 C .075 / 1.91 .130 / 3.30 E VCEO inches / mm .030 / 0.76 B VCBO MAXIMUM inches / mm A F .380 / 9.65 .390 / 9.91 G .735 / 18.67 .765 / 19.43 H .645 / 16.38 .655 / 16.64 I .895 / 22.73 .905 / 22.99 J .420 / 10.67 .430 / 10.92 K .003 / 0.08 .007 / 0.18 L .120 / 3.05 .130 / 3.30 M .159 / 4.04 .175 / 4.45 .280 / 7.11 N .395 / 10.03 O .405 / 10.29 ORDER CODE: ASI10662 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 50 mA BVCER IC = 50 mA BVCEO MINIMUM TYPICAL MAXIMUM UNITS 65 V 60 V IC = 50 mA 33 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V COB VCB = 28 V PG VCE = 28 V POUT = 100 W RBE = 15 Ω IC = 500 mA 20 f = 1.0 MHz IC = 2 X 100 mA f = 225 MHz --- 60 11 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 150 --- --- pF dB REV. A 1/1