CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R FEATURES: (4X).060 R E • Input Matching Network • • Omnigold™ Metalization System M D C .1925 F H G N I L MAXIMUM RATINGS J 25 A IC VCBO VCEO VEBO PDISS DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 30 V 3.0 V O 310 W @ TC = 25 C MAXIMUM .210 / 5.33 B 60 V K C .120 / 3.05 D .380 / 9.65 .390 / 9.91 E .780 / 19.81 .820 / 20.83 .130 / 3.30 F .435 / 11.05 G 1.090 / 27.69 H 1.335 / 33.91 1.345 / 34.16 I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .082 / 2.08 .100 / 2.54 TJ -65 OC to +200 OC L M .395 / 10.03 .407 / 10.34 -65 OC to +150 OC N .850 / 21.59 .870 / 22.10 TSTG θ JC 0.6 OC/W CHARACTERISTICS SYMBOL .205 / 5.21 ORDER CODE: ASI10585 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 60 V BVCEO IC = 100 mA 30 V BVEBO IE = 50 mA 3.0 V ICES VCE = 28 V hFE VCE = 5.0 V PG IMD ηC VCE = 24 V POUT = 100 W IC = 3.0 A ICQ = 2 X 100 mA 15 f = 960 MHz 9.0 -32 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 mA 70 --dB dBc % REV. A 1/1