TVU150A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .450 BAL FLG(B) The ASI TVU150A is Designed for A B .120 x 45° FULL R FEATURES: C E D • Input Matching Network • • Omnigold™ Metalization System M .208 4X.060 R F .050 NOM. .210 G H I J K L MAXIMUM RATINGS 25 A IC VCBO 60 V VCEO 30 V PDISS 310 W @ TC = 25 OC O O -65 C to +200 C TJ MINIMUM inches / mm inches / mm A .373 / 9.47 .385 / 9.78 C .120 / 3.25 .130 / 3.30 D .411 / 10.44 .421 / 10.69 E .825 / 20.96 .865 / 21.97 F .525 / 13.34 .535 / 13.59 G 1.255 / 31.88 1.265 / 32.18 H 1.675 / 42.55 1.685 / 42.80 I .002 / 0.05 .006 / 0.15 J .095 / 2.41 .105 / 2.67 K .115 / 2.92 .135 / 3.43 .445 / 11.30 .457 / 11.61 .250 / 6.35 L M TSTG -65 OC to +150 OC θ JC 0.55 OC/W CHARACTERISTICS SYMBOL MAXIMUM .205 / 5.21 B 3.0 V VEBO DIM ORDER CODE: ASI10653 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 60 V BVCEO IC = 100 mA 30 V BVEBO IE = 10 mA 3.0 V ICES VCE = 28 V hFE VCE = 5.0 V COB VCB = 28 V f = 1.0 MHz PG VCE = 28 V IC = 2 X 500 mA POUT = 150 W f = 860 MHz IC = 3.0 A 15 6.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 mA 70 --- 100 pF dB REV. A 1/1