ASI ASI10653

TVU150A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .450 BAL FLG(B)
The ASI TVU150A is Designed for
A
B
.120 x 45°
FULL R
FEATURES:
C
E D
• Input Matching Network
•
• Omnigold™ Metalization System
M
.208
4X.060 R
F
.050 NOM.
.210
G
H
I
J K
L
MAXIMUM RATINGS
25 A
IC
VCBO
60 V
VCEO
30 V
PDISS
310 W @ TC = 25 OC
O
O
-65 C to +200 C
TJ
MINIMUM
inches / mm
inches / mm
A
.373 / 9.47
.385 / 9.78
C
.120 / 3.25
.130 / 3.30
D
.411 / 10.44
.421 / 10.69
E
.825 / 20.96
.865 / 21.97
F
.525 / 13.34
.535 / 13.59
G
1.255 / 31.88
1.265 / 32.18
H
1.675 / 42.55
1.685 / 42.80
I
.002 / 0.05
.006 / 0.15
J
.095 / 2.41
.105 / 2.67
K
.115 / 2.92
.135 / 3.43
.445 / 11.30
.457 / 11.61
.250 / 6.35
L
M
TSTG
-65 OC to +150 OC
θ JC
0.55 OC/W
CHARACTERISTICS
SYMBOL
MAXIMUM
.205 / 5.21
B
3.0 V
VEBO
DIM
ORDER CODE: ASI10653
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
60
V
BVCEO
IC = 100 mA
30
V
BVEBO
IE = 10 mA
3.0
V
ICES
VCE = 28 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
f = 1.0 MHz
PG
VCE = 28 V
IC = 2 X 500 mA
POUT = 150 W
f = 860 MHz
IC = 3.0 A
15
6.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
10
mA
70
---
100
pF
dB
REV. A
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