VHB40-12S - Advanced Semiconductor, Inc.

VHB40-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB40-12S is Designed for
PACKAGE STYLE .380 4L STUD
Class C, 12.5 V High Band Applications
up to 175 MHz.
.112x45°
FEATURES:
C
B
• Common Emitter
• PG = 8.5 dB at 40 W/175 MHz
• Omnigold™ Metalization System
A
E
ØC
E
B
D
H
I
J
MAXIMUM RATINGS
IC
5.0 A
VCBO
36 V
VCEO
18 V
VEBO
4.0 V
70 W @ TC = 25 °C
PDISS
F
E
-65 °C to +200 °C
TJ
TSTG
-65 °C to +150 °C
θJC
2.9 °C/W
CHARACTERISTICS
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
.175 / 4.45
.750 / 19.05
J
ORDER CODE: ASI10717
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
G
#8-32 UNC-2A
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
36
V
BVCES
IC = 50 mA
36
V
BVCEO
IC = 50 mA
18
BVEBO
IE = 10 mA
4.0
ICES
VCE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 12.5 V
GP
ηC
VCC = 12.5 V
IC = 5.0 A
V
20
f = 1.0 MHz
POUT = 40 W
f = 175 MHz
8.5
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5.0
mA
200
---
135
pF
dB
%
REV. B
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