BLF861A UHF POWER LDMOS TRANSISTOR DESCRIPTION: The ASI BLF861A ia a Silicon Nchannel enhancement mode lateral DMOS push-pull transistor. PACKAGE STYLE .385X.850 4LFG FEATURES: • Internal input-output matching • Omnigold™ Metalization System MAXIMUM RATINGS ID 18 A VDS 65 V VGS ±15 V PDISS 318 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.55 °C/W CHARACTERISTICS SYMBOL 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 1.5 mA IDSS VDS = 32 V VGS = 0 V IDSX VDS = 10 V VGS = VGSth + 9 V IGSS VDS = 0 V VGS = ±15 V VGS(th) ID = 150 mA VDS = 10 V RDS(on) ID = 4.0 A VGS = VGSth + 9 V 160 Ω mΩ gfs ID = 4.0 A VDS = 10 V 4.0 S Ciss Coss Crss VDS = 32 V VGS = 0 V f = 1.0 MHz 82 40 6.0 pF VDS = 32 V Pout = 150 W f = 860 MHz Gp ηD V 65 2.2 A 18 4.0 13.5 50 µA 14.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. 25 nA 5.5 V dB % REV. A 1/1