BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: PACKAGE STYLE .380 4L FLG • PG = 13 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system MAXIMUM RATINGS ID 6.0 A VDS 65 V VGS ±20 V PDISS 68 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +200 °C θJC 1.8 °C/W CHARACTERISTICS SYMBOL 1 = DRAIN 2 = GATE 3&4 = SOURCE NONE TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 10 mA IDSS VDS = 28 V VGS = 0 V 2.0 mA IGSS VDS = 0 V VGS = ±20 V 1.0 µA VGS(th) VDS = 10 V ID = 10 mA 2.0 4.5 V gfs VDS = 10 V ID = 1.5 A 1.2 Ciss Coss Crss VDS = 28 V VGS = 0 V f = 1.0 MHz PG ηD VDS = 28 V IDQ = 25 mA Pout = 30 W f = 150 MHz ψ VSWR = 30:1 AT ALL PHASE ANGLES 65 V 13 50 1.9 S 125 75 7.0 pF 16 60 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1