ASI MRF151G

MRF151G
RF FIELD-EFFECT POWER TRANSISTOR
DESCRIPTION:
The ASI MRF151G is a Dual
Common Source N-Channel
Enhancement-Mode MOSFET
RF Power Transistor, Designed for
175 MHz, 300 W Transmitter and
Amplifier Applications.
PACKAGE STYLE .385X.850 4LFG
MAXIMUM RATINGS
ID
40 A
VDSS
125 V
VGS
±40 V
PDISS
500 W @ TC = 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +150 C
θJC
0.35 C/W
O
O
O
O
O
1 & 2 = DRAIN
3 & 4 = GATE
5 = SOURCE
O
CHARACTERISTICS
SYMBOL
O
TC = 25 C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BVDSS
ID = 100 mA
IDSS
VDS = 50 V
VGS = 0 V
5.0
mA
IGSS
VDS = 0 V
VGS = 20 V
1.0
µA
VGS(th)
ID = 100 mA
VDS = 10 V
5.0
V
VDS(on)
ID = 10 A
VGS = 10 V
5
V
gfs
ID = 5.0 A
VDS = 10 V
Ciss
Coss
Crss
VDS = 50 V
VGS = 0 V
Gps
η
VDD = 50 V
f = 175 MHz
IDQ = 500 mA
ψ
V
125
1.0
mhos
5.0
f = 1.0 MHz
Pout = 300 W
VSWR = 5:1 AT ALL PHASE ANGLES
14
50
350
250
15
pF
16
55
dB
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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