MRF175GU RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. MAXIMUM RATINGS ID 26 A VDSS 65 V PDISS 400 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θJC 0.44 OC/W CHARACTERISTICS 1 = DRAIN 2 = DRAIN(2) 3 = GATE(1) 4 = GATE(2) 5 = SOURCE (1&2) -CASE NONE O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V(BR)DSS ID = 50 mA VGS = 0 V IDSS VDS = 28 V VGS = 0 V 2.5 mA IGSS VDS = 0 V VGS = 20 V 1.0 µA VGS(th) ID =100 mA VDS = 10 V 6.0 V VDS(on) ID = 5.0 A VGS = 10 V 1.5 V gfs ID = 2.5 A VDS = 10 V 65 1.0 2.0 Ciss Coss Crss VDS = 28 V VGS = 0 V f = 1.0 MHz Gps η ψ VDD = 28 V IDQ = 2 X 100 mA POUT = 150 W f = 400 MHz 10 50 10:1 V 3.0 3.0 mhos 180 200 20 pF 12 55 --- dB % --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1