BLX39 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 STUD The ASI BLX39 is Designed for broadband amplifier operations up to 175 MHz. .112x45° A B C E FEATURES: ØC • PG = 7.6 dB min. at 40 W/175 MHz • Emitter Resistors Ballasted • Omnigold™ Metalization System E B D H I J G #8-32 UNC-2A F E MAXIMUM RATINGS MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 IC 5.0 A B .980 / 24.89 VCB 65 V C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 35 V E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 VCE PDISS 60 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.9 °C/W CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V IC = 1.0 A 10 f = 1.0 MHz PG ηC VCE = 28 V PIN = 7.0 W 5 mA 100 --- 65 pF 7.6 dB 60 % f = 175 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1