ASI D1-28Z

D1-28Z
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .280 4L STUD
The D1-28Z is Designed for General
Purpose Class C Amplifier
Applications up to 1.0 GHz.
A
45°
C
E
E
B
FEATURES:
B
• PG = 8.0 dB Typ. at 1 W/1,000 MHz
• Emitter Ballasting for Ruggedness
• Omnigold™ Metallization System
C
D
J
E
I
F
G
H
K
MAXIMUM RATINGS
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
IC
1.0 A
B
.220 / 5.59
.230 /5.84
VCB
45 V
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
PDISS
7 W @ TC = 25 OC
E
.117 / 2.97
TJ
-65 to +200 OC
G
.130 / 3.30
.245 / 6.22
H
θ JC
-65 to +150 OC
O
25 C/W
CHARACTERISTICS
SYMBOL
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10807
TC = 25 OC
TEST CONDITIONS
BV CBO
IC = 1 mA
BV CER
IC = 20 mA
BV EBO
IE = 1 mA
ICBO
VCE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
PG
ηC
VCE = 28 V
.255 / 6.48
.640 / 16.26
I
T STG
.137 / 3.48
.572 / 14.53
F
MINIMUM TYPICAL MAXIMUM
RBE = 10 Ω
IC = 100 mA
45
V
45
V
3.5
V
15
f = 1.0 MHz
POUT = 1.0 W
f = 1,000 MHz
UNITS
7.0
65
8.0
250
µA
150
---
5.0
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.