MRF234 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF234 is Designed for Large-Signal Amplifier Applications to 100 MHz. PACKAGE STYLE .380" 4L STUD .112x45° FEATURES: • Common Emitter C B • Omnigold™ Metalization System • PG = 9.5 dB min. at 25 W/ 90 MHz ØC 4.0 A G F E 36 V PDISS 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W CHARACTERISTICS I J VCB θJC H #8-32 UNC-2A 18 V TSTG B D VCE TJ E E MAXIMUM RATINGS IC A MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 200 mA 36 V BVCEO IC = 200 mA 18 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V GPE η VCC = 12.5 V 1.0 IC = 1.0 A Pout = 25 W --- 5.0 f = 1.0 MHz f = 90 MHz mA 100 120 pF 9.5 dB 55 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1