B12-28 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380" 4L STUD DESCRIPTION: .112x45° The B12-28 is Designed for Class C Power Amplifier Applications up to 250 MHz. A C B E FEATURES: ØC • PG = 13 dB Typical at 12 W/175 MHz • ∞ Load VSWR at Rated Conditions • Omnigold™ Metallization System E B D H I J G #8-32 UNC-2A F E MAXIMUM RATINGS 3.0 A IC 60 V VCB PDISS O 27 W @ TC = 25 C O O O O TJ -55 C to +200 C TSTG -55 C to +150 C θJC 6.5 C/W MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J O CHARACTERISTICS MAXIMUM DIM ORDER CODE: ASI10801 O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS BVCBO IC = 200 mA 60 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 30 V PG ηc VCC = 28 V IC = 500 mA 20 f = 1.0 MHz POUT = 12 W f = 175 MHz 10.8 50 13 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 250 µA 200 --- 30 pF dB % REV.A 1/1