HF10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF10-12S is Designed for .112x45° FEATURES: C B • PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System A E ØC E B H I D J MAXIMUM RATINGS #8-32 UNC-2A IC 4.5 A VCBO 36 V VCEO VEBO PDISS TJ F E DIM MINIMUM inches / mm inches / mm 18 V A .220 / 5.59 .230 / 5.84 B .980 / 24.89 4.0 V C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 O 80 W @ TC = 25 C O O O O -65 C to +200 C T STG -65 C to +150 C θ JC 2.2 OC/W CHARACTERISTICS SYMBOL G MAXIMUM .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10593 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 50 mA 36 V BV CES IC = 50 mA 36 V BV CEO IC = 50 mA 18 BV EBO IE = 10 mA 4.0 ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V GP IMD3 VCC = 12.5V POUT = 10 W(PEP) IC = 1.0 A 10 f = 1.0 MHz ICQ = 25 mA V f = 30 MHz 15 5 mA 200 --- 100 pF 18 dB -30 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.