ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: A 45° • • • Omnigold™ Metalization System B C D MAXIMUM RATINGS J E IC 2.5 A VCBO 36 V VCEO 16 V I F G 36 V VCES 4.0 V VEBO PDISS H K 58 W @ TC = 25 C O O O O -65 C to +150 C θ JC 7.0 OC/W SYMBOL inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 .130 / 3.30 .245 / 6.22 H TSTG CHARACTERISTICS MINIMUM G -65 C to +200 C TJ DIM F O #8-32 UNC .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10682 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 16 V BVCES IC = 25 mA 36 V BVEBO IE = 10 mA 4.0 V ICEO VCB = 15 V 2.0 mA ICES VCE = 10 V 3.0 mA hFE VCE = 5.0 V --- --- Cob VCB = 12.5 V 25 pF PG VCC = 12.5 V IC = 1.0 A 10 f = 1.0 MHz POUT = 10 W f = 470 MHz 7.0 ηC dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. % REV. A 1/1