TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5B is Designed for D FEATURES: • • • Omnigold™ Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V 31.8 W @ TC = 25 C -65 OC to +200 OC TJ O O TSTG -65 C to +150 C θ JC 33 OC/W CHARACTERISTICS SYMBOL inches / mm inches / mm A .976 / 24.800 1.000 / 25.4000 B .976 / 24.800 1.000 / 25.4000 C .028 / 0.700 .031 / 0.800 .138 / 3.500 D O MAXIMUM MINIMUM DIM 3.5 V VEBO PDISS J E .161 / 4.100 .196 / 5.000 F .098 / 2.500 .110 / 2.800 G .200 / 5.100 .208 / 5.300 H .004 / 0.100 .006 / 0.150 I .425 / 10.800 .465 / 11.800 J .200 / 5.100 2.05 / 5.200 ORDER CODE: ASI10642 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCE IC = 20 mA 24 V BVEBO IE = 0.25 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V IC = 100 mA PG VCE = 20 V IC = 150 mA IMD1 POUT = 0.5 W 15 f = 860 MHz 0.45 mA 120 --- 12 dB -58 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1