MRF227 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF227 is designed for large signal power amplifier applications operating to 225 MHz PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 0.6 A VCB 36 V VCE 16 V PDISS 8 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C O O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL TRANS1.SYM O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 50 mA 36 V BVEBO IC = 1.0 mA 4.0 V ICBO VCE = 15 V HFE VCE = 5.0 V COB VCB = 12.5 V f = 1.0 MHz GPE POUT = 3.0 W VCE = 12.5 V f = 225 MHz 13.5 η POUT = 3.0 W VCE = 12.5 V f = 225 MHz 60 1.0 IC = 100 mA 20 200 15 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. mA --- Pf dB % REV. - 1/1