MRF237 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 1.0 A VCBO 36 V VCEO 18 V PDISS 8.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 22 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR TRANS1.SYM CHARACTERISTICS TC = 25 °C TEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 18 V BVCES IC = 5.0 mA 36 V BVEBO IC = 1.0 mA 4.0 V ICBO VCE = 15 V hFE VCE = 5.0 V COB VCB = 15 V GPE η VCC = 12.5 V .25 IC = 250 mA POUT = 4.0 W --- 5.0 f = 1.0 MHz f = 175 MHz mA 15 20 pF 12 14 dB 50 62 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1