MRF450A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF450A is Designed for 12.5 Volt Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500" 4L STUD FEATURES INCLUDE: 45° A 1 • POUT = 50 W • PG = 11 dB Min. @ 30MHz & 50W • Efficiency 50% 3 B 4 ØC 2 D J E MAXIMUM RATINGS F I 7.5 A IC H G VCBO 40 V VCEO 20 V VEBO 4.0 V PDISS 115 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.53 °C/W #10-32 UNF DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.050 / 26.67 MAXIMUM B .220 / 5.59 .230 / 5.84 C .495 / 12.57 .505 / 12.83 D .003 / 0.08 .007 / 0.18 E .160 / 4.06 .180 / 4.57 .622 / 15.80 F CHARACTERISTICS SEATING PLANE G .100 / 2.54 .130 / 3.31 H .415 / 10.54 .425 / 10.80 .720 / 18.29 I .250 / 6.35 J 1 = COLLECTOR .290 / 7.37 2 = BASE 3 & 4 = EMITTER O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 20 mA 40 V BVCEO IC = 100 mA 20 V BVCBO IC = 20 mA 40 V BVEBO IE = 10 mA 4.0 V hFE VCE = 5.0 V 10 --- COB VCB = 15 V GPE VCC = 13.6 ηC IC = 1.0 A f = 1.0 MHz POUT = 50 W f = 30 MHz 200 11 15 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF dB % REV. A 1/1