MLN1030SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030SL is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L PILL FEATURES: A • Class A Operation • PG = 9.0 dB at 1.0 W/1.0 GHz • Omnigold™ Metalization System S D ØB G S MAXIMUM RATINGS IC 0.250 A VCBO 40 V VCEO 28 V VEBO 3.5 V PDISS 7.0 W @ TC = 25 °C ØC D E TSTG -65 °C to +150 °C θJC 20 ° C/W O CHARACTERISTICS inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM 1.055 / 26.80 C .275 / 6.99 .285 / 7.24 D .004 / 0.10 .006 / 0.15 E .050 / 1.27 .060 . 1.52 F .118 / 3.00 .130 / 3.30 ORDER CODE: ASI10624 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM B -65 °C to +200 °C TJ DIM F MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 40 V BVCEO IC = 1.0 mA 28 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 24 V hFE VCE = 5.0 V COB VCB = 28 V PG VCE = 20 V POUT = 1.0 W IC = 100 mA 20 f = 1.0 MHz ICQ = 150 mA f = 1.0 GHz 9.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 5.0 pF dB REV. B 1/1