MRF5175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A 45° C FEATURES: E B • Class C Operation • PG = 11 dB at 5.0 W/400 MHz • Omnigold™ Metalization System E B C D J E I F MAXIMUM RATINGS G H K 1.0 A IC VCB 60 V VCE 33 V O PDISS 12 W @ TC = 25 C TJ -65 OC to +200 OC TSTG θJC O MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .137 / 3.48 .572 / 14.53 .130 / 3.30 G .245 / 6.22 H .255 / 6.48 .640 / 16.26 I -65 C to +150 C MAXIMUM DIM F O #8-32 UNC J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 O 12 C/W CHARACTERISTICS SYMBOL O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 30 mA 33 V BVCES IC = 30 mA 60 V BVEBO IE = 1.0 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 30 V PG ηD VCC = 28 V IC = 250 mA 10 f = 1.0 MHz POUT = 5.0 W f = 400 MHz 11 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 100 --- 15 pF dB % REV. A 1/1