PT9704 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9704 is Designed for wideband, large-signal amplifier Applications up to 500 MHz. PACKAGE STYLE .280" 4L STUD A 45° C FEATURES INCLUDE: E B • Gold Metalization • Diffused Ballast Resistors • Common Emitter E B C D J E I F MAXIMUM RATINGS IC VCE PDISS TJ G H K 5.0 A 30 V 70 W @ TC = 25 °C -65 °C to +200 °C DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 -65 °C to +150 °C θJC 2.5 °C/W CHARACTERISTICS MAXIMUM .137 / 3.48 .572 / 14.53 F .130 / 3.30 G TSTG #8-32 UNC .245 / 6.22 H .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 30 mA 30 V BVCES IC = 30 mA 60 V BVEBO IE = 3.0 mA 4.0 V ICBO VCB = 30 V hFE IC = 100 mA Cob VCB = 28 V GPE η VCE = 28 V VCE = 5.0 V 10 f = 1.0 MHz POUT = 30 W f = 400 MHz 7.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 3.0 mA 150 --- 36 pF dB % REV. A 1/1