ASI PT9704

PT9704
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9704 is Designed for
wideband, large-signal amplifier
Applications up to 500 MHz.
PACKAGE STYLE .280" 4L STUD
A
45°
C
FEATURES INCLUDE:
E
B
• Gold Metalization
• Diffused Ballast Resistors
• Common Emitter
E
B
C
D
J
E
I
F
MAXIMUM RATINGS
IC
VCE
PDISS
TJ
G
H
K
5.0 A
30 V
70 W @ TC = 25 °C
-65 °C to +200 °C
DIM
MINIMUM
inches / mm
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
-65 °C to +150 °C
θJC
2.5 °C/W
CHARACTERISTICS
MAXIMUM
.137 / 3.48
.572 / 14.53
F
.130 / 3.30
G
TSTG
#8-32 UNC
.245 / 6.22
H
.255 / 6.48
.640 / 16.26
I
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
O
TC = 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 30 mA
30
V
BVCES
IC = 30 mA
60
V
BVEBO
IE = 3.0 mA
4.0
V
ICBO
VCB = 30 V
hFE
IC = 100 mA
Cob
VCB = 28 V
GPE
η
VCE = 28 V
VCE = 5.0 V
10
f = 1.0 MHz
POUT = 30 W
f = 400 MHz
7.0
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
3.0
mA
150
---
36
pF
dB
%
REV. A
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