MSC80915 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MSC80915 is Designed for Class A, Common Emitter Applications to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES INCLUDE: G • Gold Metalization • Emitter Ballasting L 300 mA 20 V VCC TJ TSTG θJC I K inches / mm inches / mm .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 O O -55 C to +200 C O O -55 C to +200 C O 35 C/W CHARACTERISTICS SYMBOL .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 G 5.0 W @ TC = 25 C MAXIMUM MINIMUM A E O NP DIM F PDISS J M MAXIMUM RATINGS IC F H H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 50 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICEO VCB = 18 V hFE VCE = 5.0 V Cob VCB = 28 V Pg P1db VCE = 18 V IC = 100 mA 15 85 f = 1.0 MHz IC = 140 mA fo = 2.0 GHz 7.5 +28 8.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 3.0 pF dB dBm REV. A 1/1