VHB80-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB80-12 is Designed for PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • • • Omnigold™ Metalization System FULL R D B E .725/18,42 F G MAXIMUM RATINGS IC 20 A VCBO 36 V VCEO 16 V VCES 36 V VEBO 4.0 V O inches / mm inches / mm A .160 / 4.06 O .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 .120 / 3.05 N .135 / 3.43 O TSTG -65 C to +150 C θ JC 0.75 OC/W CHARACTERISTICS SYMBOL MAXIMUM M -65 C to +200 C TJ L MINIMUM I O I .150 / 3.43 H 270 W J DIM B PDISS M K H ORDER CODE: ASI10718 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 100 mA 36 V BVCEO IC = 100 mA 18 V BVEBO IE = 10 mA 4.0 V ICES VCE = 12.5 V hFE VCE = 5.0 V Cob VCB = 12.5 V PG ηC VCC =12.5 V IC = 5.0 A 10 f = 1.0 MHz POUT = 80 W f = 175 MHz 7.0 mA --- --- 380 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 15 % REV. A 1/1