BLV99 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: PACKAGE STYLE 205 4L STUD • Gold Metallization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 300 mA VCBO 45 V VCEO 25 V VEBO 3.5 V PDISS 5.3 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °Cto +150 °C θJC 33 °C/W CHARACTERISTICS 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM BVCBO IC = 1.0mA BVCER IC = 10 mA BVEBO IE = 1.0 mA ICBO VEB = 5.0 V hFE VCE = 5 V COB VCB = 24 V PG VCE = 20 V IC = 150 mA f = 860 MHz VCE = 20 V IC = 150 mA f = 860 MHz IMD1 Pout = 0.5 W RBE = 10 Ω 45 V 45 V 3.5 V 1.0 IC = 100 mA UNITS --- 20 f = 1.0 MHz mA 3.5 pF 12 dB -58 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1