TPV595A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV595A is Designed for Class PACKAGE STYLE .250 BAL FLG .020 x 45° AB Push Pull, Common Emitter from 470 to 860 MHz Applications. Collector - 2 places A B Ø.130 NOM. .050 x 45° E C D N Emitter connected to flange FEATURES: • Gold Metalization F G I • Emitter Ballast Resistors • Internal Input Matching L K DIM MINIMUM B 2 x 2.6 A VCB 45 V .055 / 1.40 O O TJ -50 C to +200 C T STG -50 OC to +200 OC θ JC 2.5 OC/W .065 / 1.65 .125 / 3.18 D .243 / 6.17 .255 / 6.48 E .630 / 16.00 .670 / 17.01 .092 / 2.34 F 65 W @ TC = 25 OC inches / mm .060 / 1.52 C IC G .555 / 14.10 .565 / 14.35 H .739 / 18.77 .750 / 19.05 I .315 / 8.00 .327 / 8.31 J .002 / 0.05 .006 / 0.15 K .055 / 1.40 .065 / 1.65 L .075 1.91 .095 / 2.41 .190 / 4.83 M CHARACTERISTICS SYMBOL .245 / 6.22 .257 / 6.53 Order Code: ASI10835 NONETEST CONDITIONS BV CEO BV CER IC = 20 mA BV CBO IC = 20 mA ICBO VCB = 20 V VCE = 20 V COB VCB = 25 V PG VCE = 25 V F = 860 MHz Vision = -8 dB MINIMUM TYPICAL MAXIMUM 25 RBE = 51 Ω 28 IC = 500 mA V V 45 V Sound = -7 dB PREF = 14 W mA 3.0 V 10 -20 IC = 2 x 900 mA UNITS 40 5.0 IE = 5 mA hFE IMD3 N TC = 25 OC IC = 40 mA BV EBO M MAXIMUM inches / mm A MAXIMUM RATINGS PDISS Base - 2 places H J 8.5 9.5 SB = -16 dB pF dB -47 dB A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.