ASI ASI2223

ASI2223-20
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .310 2L FLG
The ASI 2223-20 is a Common Base
Device Designed for Pulsed S-Band
Radar Amplifier Applications
A
4x .062 x 45°
.040 x 45°
C
2xB
ØE
D
F
G
H
FEATURES:
I
• Internal Input/Output Matching Networks
• Emitter Balasting
• Omnigold™ Metalization System
M
R
N
MAXIMUM RATINGS
IC
3.0 A
VCC
25 V
PDISS
55 W @ TC ≤ 50 °C
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
2.7 °C/W
CHARACTERISTICS
MAXIMUM
MINIMUM
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
.306 / 7.77
D
.286 / 7.26
E
.110 / 2.79
.130 / 3.30
F
.306 / 7.77
.318 / 8.08
G
.148 / 3.76
H
.400 / 10.16
.119 / 3.02
J
.552 / 14.02
.572 / 14.53
K
.790 / 20.07
.810 / 20.57
L
.300 / 7.62
.320 / 8.13
M
.003 / 0.08
.006 / 0.15
N
.052 / 1.32
.072 / 1.83
P
.118 / 3.00
.131 / 3.33
.230 / 5.84
R
ORDER CODE: ASI10533
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
P
DIM
I
TJ
J
K
L
BVCBO
IC = 12 mA
BVCER
IC = 25 mA
BVEBO
IE = 2.5 mA
ICBO
VCB = 22 V
hFE
VCE = 5.0 V
IC = 2.0 A
PG
ηC
VCC = 22 V
POUT = 20 W
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
45
V
45
V
3.5
V
30
f = 2.2 – 2.3 GHz
UNITS
7.0
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
2.5
mA
300
--dB
%
REV. B
1/1