TVV020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD The ASI TVV020 is Designed for 45° A D FEATURES: S B • • • Omnigold™ Metalization System ØC S G D J E F MAXIMUM RATINGS IC 8.0 A VCEO 35 V 4.0 V VEBO PDISS G 60 V VCES 140 W @ TC = 25 C O #10-32 UNF MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.050 / 26.67 MAXIMUM B .220 / 5.59 .230 / 5.84 C .495 / 12.57 .505 / 12.83 D .003 / 0.08 .007 / 0.18 E .160 / 4.06 .180 / 4.57 .622 / 15.80 G .100 / 2.54 .130 / 3.31 H .415 / 10.54 .425 / 10.80 .720 / 18.29 I .250 / 6.35 J .290 / 7.37 O TSTG -65 C to +150 C θ JC 1.5 OC/W CHARACTERISTICS SYMBOL H SEATING PLANE DIM F O -65 OC to +200 OC TJ I ORDER CODE: ASI10659 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 50 mA BVCER IC = 50 mA BVCEO MINIMUM TYPICAL MAXIMUM UNITS 65 V 60 V IC = 50 mA 35 V BVEBO IE = 10 mA 4.0 V ICES VCB = 50 V hFE VCE = 5.0 V COB VCB = 30 V PG VCE = 25 V IMD3 POUT = 14 W RBE = 10 Ω IC = 1.0 A 20 f = 1.0 MHz IC = 2.5 A f = 225 MHz 5.0 mA 120 --- 85 pF 8.0 dB -51 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1